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Inventor: Waag; Andreas
Address: Wurzburg, DE
No. of patents: 4
Patents:
| Patent Number |
Title Of Patent |
Date Issued |
| 6495859 |
Opto-electronic component made from II-VI semiconductor material |
December 17, 2002 |
| A component has an active layer, barrier layers and, if appropriate, a buffer layer and at least one of these layers contains a beryllium-containing chalcogenide. The active layer is a multiple layer, for example a superlattice made of BeTe/ZnSe or of BeTe/ZnCdSe. When using an activ |
| 6399473 |
Method of producing a II-VI semiconductor component containing selenium and/or sulrfur |
June 4, 2002 |
| A II-VI semiconductor component is produced with an active layer sequence having at least one II-VI semiconductor layer containing Se and/or S on a substrate. First, an Se-free II-VI interlayer based on BeTe is grown epitaxially on the substrate in an essentially Se-free and S-free first |
| 6372536 |
II-VI semiconductor component having at least one junction between a layer containing Se and a l |
April 16, 2002 |
| The invention relates to a II-VI semiconductor component in which, within a series of layers, there is provided at least one junction between a semiconductor layer containing BeTe and a semiconductor layer containing Se. A boundary layer between the semiconductor layer containing BeTe an |
| 6265734 |
Opto-electronic component made from II-VI semiconductor material |
July 24, 2001 |
| Component having an active layer (4), barrier layers (3, 5), and, if appropriate, a buffer layer (2), of which layers at least one contains a beryllium-containing chalcogenide. The active layer is a multiple layer, for example a superlattice made of BeTE/ZnSe or of BeTe/ZnCdSe. When usin |
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