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Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Visokay; Mark
Address:
Richardson, TX
No. of patents:
23
Patents:












Patent Number Title Of Patent Date Issued
8183137 Use of dopants to provide low defect gate full silicidation May 22, 2012
The disclosure provides a semiconductor device and method of manufacture therefore. The method for manufacturing the semiconductor device, in one embodiment, includes forming a layer of gate electrode material over a layer of gate dielectric material, wherein the layer of gate dielectric
7812401 MOS device and process having low resistance silicide interface using additional source/drain im October 12, 2010
An integrated circuit (IC) includes a semiconductor substrate, a least one MOS transistor formed in or on the substrate, the MOS transistor including a source and drain doped with a first dopant type having a channel region of a second dopant type interposed between, and a gate elect
7682892 MOS device and process having low resistance silicide interface using additional source/drain im March 23, 2010
An integrated circuit (IC) includes a semiconductor substrate, a least one MOS transistor formed in or on the substrate, the MOS transistor including a source and drain doped with a first dopant type having a channel region of a second dopant type interposed between, and a gate elect
7531400 Methods for fabricating MOS transistor gates with doped silicide May 12, 2009
Semiconductor devices and fabrication methods are presented, in which transistor gate structures are created using doped metal silicide materials. Upper and lower metal silicides are formed above a gate dielectric, wherein the lower metal silicide is doped with n-type impurities for
7276408 Reduction of dopant loss in a gate structure October 2, 2007
A semiconductor device includes offset spacers that contact opposing side surfaces of a gate of a gate structure. The offset spacers can be formed by selectively depositing an oxide layer over the gate and the semiconductor substrate so that the opposing side surfaces of the gate e a
7253102 Methods for forming and integrated circuit structures containing enhanced-surface-area conductiv August 7, 2007
An enhanced-surface-area conductive layer compatible with high-dielectric constant materials is created by forming a film or layer having at least two phases, at least one of which is electrically conductive. The film may be formed in any convenient manner, such as by chemical vapor
7253076 Methods for forming and integrated circuit structures containing ruthenium and tungsten containi August 7, 2007
Capacitors having increased capacitance include an enhanced-surface-area (rough-surfaced) electrically conductive layer or other layers that are compatible with the high-dielectric constant materials. In one approach, an enhanced-surface-area electrically conductive layer for such ca
7148546 MOS transistor gates with doped silicide and methods for making the same December 12, 2006
Semiconductor devices and fabrication methods are presented, in which transistor gate structures are created using doped metal silicide materials. Upper and lower metal silicides are formed above a gate dielectric, wherein the lower metal silicide is doped with n-type impurities for
7071519 Control of high-k gate dielectric film composition profile for property optimization July 4, 2006
Methods and systems are disclosed that facilitate formation of dielectric layers having a particular composition profile by forming the dielectric layer as a number of sub-layers. The sub-layers are thin enough so that specific relative compositions can be achieved for each layer and,
7038263 Integrated circuits with rhodium-rich structures May 2, 2006
A structure and method are disclosed for forming a capacitor for an integrated circuit. The capacitor includes a rhodium-rich structure, a rhodium oxide layer in direct contact with the rhodium-rich structure, a capacitor dielectric in direct contact with the rhodium oxide layer and a
7037730 Capacitor with high dielectric constant materials and method of making May 2, 2006
Stabilized capacitors and DRAM cells using high dielectric constant oxide dielectric materials such as Ta.sub.2O.sub.5 and Ba.sub.xSr.sub.(1-x)TiO.sub.3, and methods of making such capacitors and DRAM cells are provided. A preferred method includes providing a conductive oxide electr
6936508 Metal gate MOS transistors and methods for making the same August 30, 2005
Semiconductor devices and fabrication methods are provided, in which metal transistor gates are provided for MOS transistors. Metal boride is formed above a gate dielectric to create PMOS gate structures and metal nitride is formed over a gate dielectric to provide NMOS gate structures.
6869877 Integrated capacitors fabricated with conductive metal oxides March 22, 2005
A capacitor for a memory device is formed with a conductive oxide for a bottom electrode. The conductive oxide (RuO.sub.x) is deposited under low temperatures as an amorphous film. As a result, the film is conformally deposited over a three dimensional, folding structure. Furthermore, a
6833576 Methods for forming and integrated circuit structures containing ruthenium and tungsten containi December 21, 2004
Capacitors having increased capacitance include an enhanced-surface-area (rough-surfaced) electrically conductive layer or other layers that are compatible with the high-dielectric constant materials. In one approach, an enhanced-surface-area electrically conductive layer for such capaci
6828200 Multistage deposition that incorporates nitrogen via an intermediate step December 7, 2004
The present invention forms a nitrided dielectric layer without substantial harm to a semiconductor layer on which the dielectric layer is formed. The invention employs a multi-stage process in which dielectric sub-layers are individually nitrided before formation of a next dielectric su
6812112 Methods for forming and integrated circuit structures containing enhanced-surface-area conductiv November 2, 2004
An enhanced-surface-area conductive layer compatible with high-dielectric constant materials is created by forming a film or layer having at least two phases, at least one of which is electrically conductive. The film may be formed in any convenient manner, such as by chemical vapor depo
6781175 Rhodium-rich integrated circuit capacitor electrode August 24, 2004
A structure and method are disclosed for forming a capacitor for an integrated circuit. The capacitor includes a rhodium-rich structure, a rhodium oxide layer in direct contact with the rhodium-rich structure, a capacitor dielectric in direct contact with the rhodium oxide layer and a
6764943 Methods for forming and integrated circuit structures containing enhanced-surface-area conductiv July 20, 2004
An enhanced-surface-area conductive layer compatible with high-dielectric constant materials is created by forming a film or layer having at least two phases, at least one of which is electrically conductive. The film may be formed in any convenient manner, such as by chemical vapor depo
6750126 Methods for sputter deposition of high-k dielectric films June 15, 2004
Methods are disclosed for fabricating transistor gate structures and high-k dielectric layers therefor by sputter deposition, in which nitridation and/or oxidation or other adverse reaction of the semiconductor material is reduced or minimized by reducing the bombardment of the semicondu
6740554 Methods to form rhodium-rich oxygen barriers May 25, 2004
A structure and method are disclosed for forming a capacitor for an integrated circuit. The capacitor includes a rhodium-rich structure, a rhodium oxide layer in direct contact with the rhodium-rich structure, a capacitor dielectric in direct contact with the rhodium oxide layer and a
6596583 Methods for forming and integrated circuit structures containing ruthenium and tungsten containi July 22, 2003
Capacitors having increased capacitance include an enhanced-surface-area (rough-surfaced) electrically conductive layer or other layers that are compatible with the high-dielectric constant materials. In one approach, an enhanced-surface-area electrically conductive layer for such capaci
6518610 Rhodium-rich oxygen barriers February 11, 2003
A structure and method are disclosed for forming a capacitor for an integrated circuit. The capacitor includes a rhodium-rich structure, a rhodium oxide layer in direct contact with the rhodium-rich structure, a capacitor dielectric in direct contact with the rhodium oxide layer and a
6482736 Methods for forming and integrated circuit structures containing enhanced-surface-area conductiv November 19, 2002
An enhanced-surface-area conductive layer compatible with high-dielectric constant materials is created by forming a film or layer having at least two phases, at least one of which is electrically conductive. The film may be formed in any convenient manner, such as by chemical vapor depo










 
 
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