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Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Verhaverbeke; Steven
Address:
San Francisco, CA
No. of patents:
38
Patents:












Patent Number Title Of Patent Date Issued
8586952 Temperature control of a substrate during a plasma ion implantation process for patterned disc m November 19, 2013
Embodiments of the invention provide a method of reducing thermal energy accumulation during a plasma ion implantation process for forming patterns including magnetic and non-magnetic domains on a magnetically susceptible surface on a substrate. In one embodiment, a method of control
7914623 Post-ion implant cleaning for silicon on insulator substrate preparation March 29, 2011
A combination of a dry oxidizing, wet etching, and wet cleaning processes are used to remove particle defects from a wafer after ion implantation, as part of a wafer bonding process to fabricate a SOI wafer. The particle defects on the topside and the backside of the wafer are oxidized,
7836901 Method and apparatus for wafer cleaning November 23, 2010
An apparatus for wet processing individual wafers comprising; a means for holding the wafer; a means for providing acoustic energy to a non-device side of the wafer; and a means for flowing a fluid onto a device side of the wafer.
7819985 Method and apparatus for wafer cleaning October 26, 2010
An apparatus for wet processing individual wafers comprising; a means for holding the wafer; a means for providing acoustic energy to a non-device side of the wafer; and a means for flowing a fluid onto a device side of the wafer.
7767586 Methods for forming connective elements on integrated circuits for packaging applications August 3, 2010
Methods for forming connective elements on integrated circuits for packaging applications are provided herein. In some embodiments, a method of forming connective elements on an integrated circuit for flipchip packaging may include providing a resist layer on the integrated circuit;
7718009 Cleaning submicron structures on a semiconductor wafer surface May 18, 2010
Cleaning solutions and cleaning methods targeted to particular substrates and structures in semiconductor fabrication are described. A method of cleaning fragile structures having a dimension less than 0.15 um with a cleaning solution formed of a solvent having a surface tension less tha
7632756 Semiconductor processing using energized hydrogen gas and in combination with wet cleaning December 15, 2009
A method of fabricating a semiconductor device. The method comprises subjecting a substrate having formed thereon photoresist layer to a plasma hydrogen, the substrate further having formed thereon a sacrificial layer; contacting the photoresist layer with a photoresist removal solut
7586235 Matching circuit for megasonic transducer device September 8, 2009
A method and apparatus for matching impedance magnitude and impedance phase for an acoustic-wave transducer load and an RF power source. The acoustic-wave transducer load has a load impedance magnitude and phase. The RF power source has a source impedance magnitude and phase. In one
7585686 Method and apparatus for processing a wafer September 8, 2009
A method of a single wafer wet/dry cleaning apparatus comprising: a transfer chamber having a wafer handler contained therein; a first single wafer wet cleaning chamber directly coupled to the transfer chamber; and a first single wafer ashing chamber directly coupled to the transfer
7521374 Method and apparatus for cleaning semiconductor substrates April 21, 2009
According to one aspect of the present invention, a method and apparatus for cleaning a semiconductor substrate is provided. The method may include supporting a semiconductor substrate, the semiconductor substrate having a surface, and dispensing an amount of semiconductor substrate
7469883 Cleaning method and solution for cleaning a wafer in a single wafer process December 30, 2008
The present invention is a novel cleaning method and a solution for use in a single wafer cleaning process. According to the present invention the cleaning solution comprises ammonium hydroxide (NH.sub.4OH), hydrogen peroxide (H.sub.2O.sub.2), water (H.sub.2O) and a chelating agent. In a
7456113 Cleaning method and solution for cleaning a wafer in a single wafer process November 25, 2008
The present invention is a method of use of a novel cleaning solution in a single wafer cleaning process. According to the present invention the method involves using a cleaning solution in a single wafer mode and the cleaning solution comprises at least ammonium hydroxide (NH.sub.4OH),
7451774 Method and apparatus for wafer cleaning November 18, 2008
An apparatus for wet processing individual wafers comprising; a means for holding the wafer; a means for providing acoustic energy to a non-device side of the wafer; and a means for flowing a fluid onto a device side of the wafer.
7449127 Cleaning method and solution for cleaning a wafer in a single wafer process November 11, 2008
The present invention is a novel cleaning method and a solution for use in a single wafer cleaning process. According to the present invention the cleaning solution comprises ammonium hydroxide (NH.sub.4OH), hydrogen peroxide (H.sub.2O.sub.2), water (H.sub.2O) and a chelating agent. In a
7435686 Semiconductor processing using energized hydrogen gas and in combination with wet cleaning October 14, 2008
A method of fabricating a semiconductor device. The method comprises subjecting a substrate having formed thereon photoresist layer to a plasma hydrogen, the substrate further having formed thereon a sacrificial layer; contacting the photoresist layer with a photoresist removal solut
7432177 Post-ion implant cleaning for silicon on insulator substrate preparation October 7, 2008
A combination of a dry oxidizing, wet etching, and wet cleaning processes are used to remove particle defects from a wafer after ion implantation, as part of a wafer bonding process to fabricate a SOI wafer. The particle defects on the topside and the backside of the wafer are oxidized,
7402213 Stripping and removal of organic-containing materials from electronic device substrate surfaces July 22, 2008
Described herein is a method of removing an organic-containing material from an exposed surface of a large substrate (at least 0.25 m.sup.2). The substrate may comprise an electronic device. The exposed surface is treated with a stripping solution comprising ozone (O.sub.3) in a solv
7358196 Wet chemical treatment to form a thin oxide for high k gate dielectrics April 15, 2008
Described herein are methods of forming a thin silicon dioxide layer having a thickness of less than eight angstroms on a semiconductor substrate to form the bottom layer of a gate dielectric. A silicon dioxide layer having a thickness of less than eight angstroms may be formed by tw
7341065 Single wafer cleaning method to reduce particle defects on a wafer surface March 11, 2008
Methods of preventing air-liquid interfaces on the surface of a wafer in order to prevent the formation of particle defects on a wafer are presented. The air-liquid interfaces may be prevented by covering the entire surface of the wafer with liquid at all times during a cleaning proc
7334588 Method and apparatus for wafer cleaning February 26, 2008
An apparatus for wet processing individual wafers comprising; a means for holding the wafer; a means for providing acoustic energy to a non-device side of the wafer; and a means for flowing a fluid onto a device side of the wafer.
7314854 Ammonium hydroxide treatments for semiconductor substrates January 1, 2008
Embodiments of the current invention describe ammonia hydroxide treatments for surfaces. In one embodiment, a method and a cleaning solution including ammonium hydroxide (NH.sub.4OH), water (H.sub.2O), a chelating agent, and a surfactant for cleaning silicon germanium substrates are
7235479 Organic solvents having ozone dissolved therein for semiconductor processing utilizing sacrifici June 26, 2007
A method of fabricating a semiconductor device. The method comprises creating a via in a dielectric layer that is formed on a substrate, filling the via, and optionally, the surface of the dielectric layer with a sacrificial material, patterning a first photoresist layer on the sacri
7232759 Ammonium hydroxide treatments for semiconductor substrates June 19, 2007
Embodiments of the current invention describe ammonia hydroxide treatments for surfaces. In one embodiment, a method and a cleaning solution including ammonium hydroxide (NH.sub.4OH), water (H.sub.2O), a chelating agent, and a surfactant for cleaning silicon germanium substrates are
7205023 Method and apparatus for chemical mixing in a single wafer process April 17, 2007
A method of and apparatus for mixing chemicals in a single wafer process. According to the present invention a chemical is fed into a valve system having a tube of a known volume. The chemical is fed into the valve system to fill the tube with a chemical to generate a measured amount of
7201808 Method and apparatus for rotating a semiconductor substrate April 10, 2007
An apparatus that includes a rotatable single wafer holding bracket with one or more wafer supports disposed on the single wafer holding bracket, wherein the one or more wafer supports position a center of a wafer to be off-center from an axis of rotation of the single wafer holding brac
7190103 Matching circuit for megasonic transducer device March 13, 2007
A method and apparatus for matching impedance magnitude and impedance phase for an acoustic-wave transducer load and an RF power source. The acoustic-wave transducer load has a load impedance magnitude and phase. The RF power source has a source impedance magnitude and phase. In one
7163018 Single wafer cleaning method to reduce particle defects on a wafer surface January 16, 2007
Methods of preventing air-liquid interfaces on the surface of a wafer in order to prevent the formation of particle defects on a wafer are presented. The air-liquid interfaces may be prevented by covering the entire surface of the wafer with liquid at all times during a cleaning proc
7159599 Method and apparatus for processing a wafer January 9, 2007
A method of a single wafer wet/dry cleaning apparatus comprising: a transfer chamber having a wafer handler contained therein; a first single wafer wet cleaning chamber directly coupled to the transfer chamber; and a first single wafer ashing chamber directly coupled to the transfer
7037842 Method and apparatus for dissolving a gas into a liquid for single wet wafer processing May 2, 2006
A method and apparatus for processing a wafer is described. According to the present invention a wafer is placed on a substrate support. A liquid is then fed through a conduit having an output opening over the wafer. A gas is dissolved in the liquid prior to the liquid reaching the outpu
7021319 Assisted rinsing in a single wafer cleaning process April 4, 2006
The present invention is a method of assisting the rinsing of a wafer in a single wafer cleaning apparatus. According to the present invention, after exposing a wafer to a cleaning and/or etching solution, the cleaning or etching solution is removed from the wafer by spinning the waf
7011715 Rotational thermophoretic drying March 14, 2006
A method that includes rotating a wafer, heating the wafer, applying a first liquid through one or more nozzles to a center of a topside of the wafer that is cooler than the heated wafer, and translating the one or more nozzles to an outer diameter edge of the wafer.
7000621 Methods and apparatuses for drying wafer February 21, 2006
Apparatuses and methods of processing a substrate. The apparatus includes a wet-cleaning chamber, a drying chamber, and a substrate transferring chamber which transfers a substrate to and from the wet-cleaning chamber and the drying chamber. The drying chamber is one of a supercritical
6954021 Matching circuit for megasonic transducer device October 11, 2005
A method and apparatus for matching impedance magnitude and impedance phase for an acoustic- wave transducer load and an RF power source. The acoustic-wave transducer load has a load impedance magnitude and phase. The RF power source has a source impedance magnitude and phase. In one
6927176 Cleaning method and solution for cleaning a wafer in a single wafer process August 9, 2005
The present invention is a novel cleaning method and a solution for use in a single wafer cleaning process. According to the present invention the cleaning solution comprises ammonium hydroxide (NH.sub.4 OH), hydrogen peroxide (H.sub.2 O.sub.2), water (H.sub.2 O) and a chelating agent. I
6843855 Methods for drying wafer January 18, 2005
Apparatuses and methods of processing a substrate. The apparatus includes a wet-cleaning chamber, a drying chamber, and a substrate transferring chamber which transfers a substrate to and from the wet-cleaning chamber and the drying chamber. The drying chamber is one of a supercritical
6807972 Gutter and splash-guard for protecting a wafer during transfer from a single wafer cleaning cham October 26, 2004
A single wafer cleaning chamber that includes a rotatable bracket that can place a wafer beneath an upper end of a catch cup during a wafer cleaning process, a gutter positioned above a wafer transfer slit; where the catch cup can mate with the gutter to create a gap, and with the upper
6524940 Methods and devices utilizing the ammonium termination of silicon dioxide films February 25, 2003
The present invention is a novel termination of silicon dioxide films for use in a single wafer cleaning tool. According to the present invention a silicon dioxide film is formed on a silicon substrate and the film is then terminated with ammonium oxide (--O--NH.sub.4). In an embodiment
6491763 Processes for treating electronic components December 10, 2002
A process for treating an electronic component wherein the electronic component is exposed to a heated solvent and subsequently exposed to an ozonated process fluid. The electronic component is optionally exposed to the heated solvent by exposing the electronic component to a passing lay










 
 
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