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Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Van der Linde; Jan
Address:
Saratoga, CA
No. of patents:
5
Patents:












Patent Number Title Of Patent Date Issued
5750416 Method of forming a lateral field effect transistor having reduced drain-to-source on-resistance May 12, 1998
A power field effect transistor has a laterally extending channel region which is not formed by double diffusion. The channel region may be formed in epitaxial silicon which is not doped after being grown. The drain electrode of the transistor is disposed on a bottom surface of the s
5521409 Structure of power mosfets, including termination structures May 28, 1996
A power MOSFET is created from a semiconductor body (2000 and 2001) having a main active area and a peripheral termination area. A first insulating layer (2002), typically of substantially uniform thickness, lies over the active and termination areas. A main polycrystalline portion (2003
5468982 Trenched DMOS transistor with channel block at cell trench corners November 21, 1995
A trenched DMOS transistor has improved device performance and production yield. During fabrication the cell trench corners, i.e. the areas where two trenches intersect, are covered on the principal surface of the integrated circuit substrate with a blocking photoresist layer during the
5429964 Low on-resistance power MOS technology July 4, 1995
A submicron channel length is achieved in cells having sharp corners, such as square cells, by blunting the corners of the cells. In this way, the three dimensional diffusion effect is minimized, and punch through is avoided. Techniques are discussed for minimizing defects in the shallow
5304831 Low on-resistance power MOS technology April 19, 1994
A submicron channel length is achieved in cells having sharp corners, such as square cells, by blunting the corners of the cells. In this way, the three dimensional diffusion effect is minimized, and punch through is avoided. Techniques are discussed for minimizing defects in the shallow










 
 
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