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Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Uhlenbrock; Stefan
Address:
Boise, ID
No. of patents:
39
Patents:












Patent Number Title Of Patent Date Issued
8283503 Methods of forming a tellurium alkoxide and methods of forming a mixed halide-alkoxide of tellur October 9, 2012
A method of forming a tellurium alkoxide includes providing a tellurium halide and a non-tellurium alkoxide in a liquid organic solvent. The liquid organic solvent has less moles of alcohol, if any, than moles of tellurium halide in the liquid organic solvent. The tellurium halide and
8148580 Methods of forming a tellurium alkoxide and methods of forming a mixed halide-alkoxide of tellur April 3, 2012
A method of forming a tellurium alkoxide includes providing a tellurium halide and a non-tellurium alkoxide in a liquid organic solvent. The liquid organic solvent has less moles of alcohol, if any, than moles of tellurium halide in the liquid organic solvent. The tellurium halide and
7858523 Unsymmetrical ligand sources, reduced symmetry metal-containing compounds, and systems and metho December 28, 2010
The present invention provides metal-containing compounds that include at least one .beta.-diketiminate ligand, and methods of making and using the same. In some embodiments, the metal-containing compounds are homoleptic complexes that include unsymmetrical .beta.-diketiminate ligands. I
7837797 Systems and methods for forming niobium and/or vanadium containing layers using atomic layer dep November 23, 2010
A method of forming (and an apparatus for forming) a metal containing layer on a substrate, particularly a semiconductor substrate or substrate assembly for use in manufacturing a semiconductor or memory device structure, using one or more precursor compounds that include niobium and
7572731 Unsymmetrical ligand sources, reduced symmetry metal-containing compounds, and systems and metho August 11, 2009
The present invention provides metal-containing compounds that include at least one .beta.-diketiminate ligand, and methods of making and using the same. In some embodiments, the metal-containing compounds are homoleptic complexes that include unsymmetrical .beta.-diketiminate ligands. I
7482037 Methods for forming niobium and/or vanadium containing layers using atomic layer deposition January 27, 2009
A method of forming a metal containing layer on a substrate, particularly a semiconductor substrate or substrate assembly for use in manufacturing a semiconductor or memory device structure, using one or more precursor compounds that include niobium and/or vanadium and using an atomic la
7393785 Methods and apparatus for forming rhodium-containing layers July 1, 2008
A method of forming a rhodium-containing layer on a substrate, such as a semiconductor wafer, using complexes of the formula L.sub.yRhY.sub.z is provided. Also provided is a chemical vapor co-deposited platinum-rhodium alloy barriers and electrodes for cell dielectrics for integrated
7250367 Deposition methods using heteroleptic precursors July 31, 2007
An ALD method includes exposing a substrate to a first precursor including a plurality of different ligands, chemisorbing a precursor monolayer on the substrate, and reacting a second precursor with the precursor monolayer to yield a product monolayer. A surface reactive ligand exhib
7226861 Methods and apparatus for forming rhodium-containing layers June 5, 2007
A method of forming a rhodium-containing layer on a substrate, such as a semiconductor wafer, using complexes of the formula L.sub.yRhY.sub.z is provided. Also provided is a chemical vapor co-deposited platinum-rhodium alloy barriers and electrodes for cell dielectrics for integrated
7115166 Systems and methods for forming strontium- and/or barium-containing layers October 3, 2006
A method of forming (and apparatus for forming) a layer, such as a strontium titanate, barium titanate, or barium-strontium titanate layer, on a substrate by employing a vapor deposition method, particularly a multi-cycle atomic layer deposition process.
7049237 Methods for planarization of Group VIII metal-containing surfaces using oxidizing gases May 23, 2006
A planarization method includes providing a second and/or third Group VIII metal-containing surface (preferably, a platinum-containing surface) and positioning it for contact with a polishing surface in the presence of a planarization composition that includes an oxidizing gas.
6998152 Chemical vapor deposition methods utilizing ionic liquids February 14, 2006
The present invention provides methods and apparatus for vaporizing and transporting precursor molecules to a process chamber for deposition of thin films on a substrate. The methods and apparatus include CVD solvents that comprise ionic liquids. The ionic liquids comprise salt compounds
6943073 Process for low temperature atomic layer deposition of RH September 13, 2005
A method for the formation of rhodium films with good step coverage is disclosed. Rhodium films are formed by a low temperature atomic layer deposition technique using a first gas of rhodium group metal precursor followed by an oxygen exposure. The invention provides, therefore, a me
6881260 Process for direct deposition of ALD RhO2 April 19, 2005
The present invention provides methods of performing atomic layer deposition to form conductive, oxidation-resistant rhodium oxide films and films comprising metals, such as platinum, alloyed with rhodium oxide. The present invention also provides memory devices and processors comprising
6874335 Large scale synthesis of germanium selenide glass and germanium selenide glass compounds April 5, 2005
Systems and methods for large scale synthesis of germanium selenide glass and germanium selenide glass compounds are provided. Up to about 750 grams of a germanium selenide glass or a glass compound can be synthesized at a time in about eight hours or less. Stoichiometrically proportiona
6872420 Methods for preparing ruthenium and osmium compounds and films March 29, 2005
The present invention provides methods for the preparation of compounds of the formula (Formula I):wherein M is Ru or Os, each L is independently a neutral ligand, y=1-4, and z=1-5. These methods involve the reaction of Ru.sub.3 (CO).sub.12 or Os.sub.3 (CO).sub.12 with a neutral ligand i
6844261 Method of forming ruthenium and ruthenium oxide films on a semiconductor structure January 18, 2005
A method is provided for forming a film of ruthenium or ruthenium oxide to the surface of a substrate by employing the techniques of chemical vapor deposition to decompose ruthenium precursor formulations. The ruthenium precursor formulations of the present invention include a ruthenium
6840988 Solvated ruthenium precursors for direct liquid injection of ruthenium and ruthenium oxide January 11, 2005
A method is provided for forming a film of ruthenium or ruthenium oxide to the surface of a substrate by employing the techniques of chemical vapor deposition to decompose ruthenium precursor formulations. The ruthenium precursor formulations of the present invention include a ruthenium
6783657 Systems and methods for the electrolytic removal of metals from substrates August 31, 2004
The present invention provides methods and systems for the electrolytic removal of platinum and/or other of the Group 8-11 metals from substrates.
6773495 Solutions of metal-comprising materials August 10, 2004
In one aspect, the invention encompasses a semiconductor processing method of forming a metal-comprising layer over a substrate. A substrate is provided within a reaction chamber, and a source of a metal-comprising precursor is provided external to the reaction chamber. The metal-com
6730164 Systems and methods for forming strontium- and/or barium-containing layers May 4, 2004
A method of forming (and apparatus for forming) a layer, such as a strontium titanate, barium titanate, or barium-strontium titanate layer, on a substrate by employing a vapor deposition method, particularly a multi-cycle atomic layer deposition process.
6690055 Devices containing platinum-rhodium layers and methods February 10, 2004
A method of forming a rhodium-containing layer on a substrate, such as a semiconductor wafer, using complexes of the formula L.sub.y RhY.sub.z is provided. Also provided is a chemical vapor co-deposited platinum-rhodium alloy barriers and electrodes for cell dielectrics for integrated
6656839 Solutions of metal-comprising materials, and methods of making solutions of metal-comprising mat December 2, 2003
In one aspect, the invention encompasses a semiconductor processing method of forming a metal-comprising layer over a substrate. A substrate is provided within a reaction chamber, and a source of a metal-comprising precursor is provided external to the reaction chamber. The metal-com
6656835 Process for low temperature atomic layer deposition of Rh December 2, 2003
A method for the formation of rhodium films with good step coverage is disclosed. Rhodium films are formed by a low temperature atomic layer deposition technique using a first gas of rhodium group metal precursor followed by an oxygen exposure. The invention provides, therefore, a me
6576778 Methods for preparing ruthenium and osmium compounds June 10, 2003
The present invention provides methods for the preparation of compounds of the formula (Formula I):wherein M is Ru or Os, each L is independently a neutral ligand, y=1-4, and z=1-5. These methods involve the reaction of Ru.sub.3 (CO).sub.12 or Os.sub.3 (CO).sub.12 with a neutral ligand i
6541067 Solvated ruthenium precursors for direct liquid injection of ruthenium and ruthenium oxide and m April 1, 2003
A method is provided for forming a film of ruthenium or ruthenium oxide to the surface of a substrate by employing the techniques of chemical vapor deposition to decompose ruthenium precursor formulations. The ruthenium precursor formulations of the present invention include a ruthenium
6517616 Solvated ruthenium precursors for direct liquid injection of ruthenium and ruthenium oxide February 11, 2003
A method is provided for forming a film of ruthenium or ruthenium oxide to the surface of a substrate by employing the techniques of chemical vapor deposition to decompose ruthenium precursor formulations. The ruthenium precursor formulations of the present invention include a ruthenium
6495459 Solutions of metal-comprising materials, methods of forming metal-comprising layers, methods of December 17, 2002
In one aspect, the invention encompasses a semiconductor processing method of forming a metal-comprising layer over a substrate. A substrate is provided within a reaction chamber, and a source of a metal-comprising precursor is provided external to the reaction chamber. The metal-com
6452017 Complexes having tris(pyrazolyl)methanate ligands September 17, 2002
Methods of forming a film on a substrate using chemical vapor deposition techniques and pyrazolyl complexes. The complexes and methods are particularly suitable for the preparation of semiconductor structures.
6444818 Metal complexes with chelating C-, N-donor ligands for forming metal-containing films September 3, 2002
A method of forming a film on a substrate using transition metal or lanthanide complexes. The complexes and methods are particularly suitable for the preparation of semiconductor structures using chemical vapor deposition techniques and systems.
6352580 Complexes having tris(pyrazolyl)borate ligands for forming films March 5, 2002
Methods of forming a film on a substrate using chemical vapor deposition techniques and pyrazolyl complexes. The complexes and methods are particularly suitable for the preparation of semiconductor structures.
6319832 Methods of making semiconductor devices November 20, 2001
In one aspect, the invention encompasses a semiconductor processing method of forming a metal-comprising layer over a substrate. A substrate is provided within a reaction chamber, and a source of a metal-comprising precursor is provided external to the reaction chamber. The metal-com
6306217 Metal complexes with chelating C-,N-donor ligands for forming metal-containing films October 23, 2001
A method of forming a film on a substrate using transition metal or lanthanide complexes. The complexes and methods are particularly suitable for the preparation of semiconductor structures using chemical vapor deposition techniques and systems.
6271131 Methods for forming rhodium-containing layers such as platinum-rhodium barrier layers August 7, 2001
A method of forming a rhodium-containing layer on a substrate, such as a semiconductor wafer, using complexes of the formula L.sub.y RhY.sub.z is provided. Also provided is a chemical vapor co-deposited platinum-rhodium alloy barriers and electrodes for cell dielectrics for integrated
6214729 Metal complexes with chelating C-, N-donor ligands for forming metal-containing films April 10, 2001
A method of forming a film on a substrate using transition metal or lanthanide complexes. The complexes and methods are particularly suitable for the preparation of semiconductor structures using chemical vapor deposition techniques and systems.
6133161 Methods of forming a film on a substrate using complexes having tris(pyrazolyl) methanate ligand October 17, 2000
Methods of forming a film on a substrate using chemical vapor deposition techniques and pyrazolyl complexes. The complexes and methods are particularly suitable for the preparation of semiconductor structures.
6127192 Complexes having tris (pyrazolyl) borate ligands for forming films October 3, 2000
Methods of forming a film on a substrate using chemical vapor deposition techniques and pyrazolyl complexes. The complexes and methods are particularly suitable for the preparation of semiconductor structures.
6114557 Methods for preparing ruthenium and osmium compounds September 5, 2000
The present invention provides methods for the preparation of compounds of the formula (Formula I):wherein M is Ru or Os, each L is independently a neutral ligand, y=1-4, and z=1-5. These methods involve the reaction of Ru.sub.3 (CO).sub.12 or Os.sub.3 (CO).sub.12 with a neutral ligand i
5962716 Methods for preparing ruthenium and osmium compounds October 5, 1999
The present invention provides methods for the preparation of compounds of the formula (Formula I):wherein M is Ru or Os, each L is independently a neutral ligand, y=1-4, and z=1-5. These methods involve the reaction of Ru.sub.3 (CO).sub.12 or Os.sub.3 (CO).sub.12 with a neutral ligand i










 
 
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