| Patent Number |
Title Of Patent |
Date Issued |
| 7304325 |
Group III nitride compound semiconductor light-emitting device |
December 4, 2007 |
| A semiconductor laminate containing a light-emitting layer is etched to reveal a side surface. A reflection surface opposite to the side surface of the semiconductor laminate is provided in one and the same chip as the semiconductor laminate. A groove may be formed in the laminate by a |
| 7157294 |
Group III nitride compound semiconductor light-emitting element |
January 2, 2007 |
| In a flip chip type Group III nitride compound semiconductor light-emitting element, a surface of a substrate serving as a light-emitting surface is formed as a rough surface so that radiated light is scattered by the surface. |
| 7138662 |
Light-emitting device |
November 21, 2006 |
| A light-emitting device including: a semiconductor light-emitting element using a substrate surface as a light-extracting surface; and a mount frame on which the semiconductor light-emitting element is mounted and which has a reflecting portion for reflecting light emitted from the s |
| 7023020 |
Group III nitride compound semiconductor light-emitting device |
April 4, 2006 |
| A groove is formed in a semiconductor laminate portion containing a light-emitting layer so that the groove starts from a light emission observation surface of the semiconductor laminate portion to reach at least the light-emitting layer. In such a manner, light is released from an o |
| 7015515 |
Group III nitride compound semiconductor device having a superlattice structure |
March 21, 2006 |
| After one of layers constituting a superlattice structure is formed by an MOCVD method, NH.sub.3 gas is circulated together with H.sub.2 gas as a carrier gas to thereby perform a purge step. After the purge step, a next layer is formed. |
| 6831305 |
Semiconductor light-emitting device |
December 14, 2004 |
| A group III nitride compound semiconductor light-emitting element of a flip chip bonding type for emitting light with a wavelength not longer than 400 nm is coupled to a Zener diode, and the light-emitting element and the Zener diode coupled to each other are sealed with a metal casing h |
| 6794690 |
Group III nitride compound semiconductor light-emitting element |
September 21, 2004 |
| A Group III nitride compound semiconductor light-emitting element (flip chip type light-emitting element) provided with a p-side electrode and an n-side electrode formed on one surface side, wherein the p-side electrode includes: a first metal layer containing Ag and formed on a p-type |
| 6777805 |
Group-III nitride compound semiconductor device |
August 17, 2004 |
| An object of the present invention is to provide a large-size light-emitting device from which uniform light emission can be obtained.That is, in the present invention, in a device having an outermost diameter of not smaller than 700 .mu.m, a distance from an n electrode to a farthest po |
| 6774025 |
Method for producing group III nitride compound semiconductor light-emitting element |
August 10, 2004 |
| After a p seat electrode is laminated on a light-transmissive electrode, the two electrodes are heated at a relatively low temperature to thereby remove gas (degassing) from between the two electrodes. Then, the two electrodes are alloyed with each other at a high temperature. |
