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Uemura; Toshiya
Nishikasugai-gun, JP
No. of patents:

Patent Number Title Of Patent Date Issued
7304325 Group III nitride compound semiconductor light-emitting device December 4, 2007
A semiconductor laminate containing a light-emitting layer is etched to reveal a side surface. A reflection surface opposite to the side surface of the semiconductor laminate is provided in one and the same chip as the semiconductor laminate. A groove may be formed in the laminate by a
7157294 Group III nitride compound semiconductor light-emitting element January 2, 2007
In a flip chip type Group III nitride compound semiconductor light-emitting element, a surface of a substrate serving as a light-emitting surface is formed as a rough surface so that radiated light is scattered by the surface.
7138662 Light-emitting device November 21, 2006
A light-emitting device including: a semiconductor light-emitting element using a substrate surface as a light-extracting surface; and a mount frame on which the semiconductor light-emitting element is mounted and which has a reflecting portion for reflecting light emitted from the s
7023020 Group III nitride compound semiconductor light-emitting device April 4, 2006
A groove is formed in a semiconductor laminate portion containing a light-emitting layer so that the groove starts from a light emission observation surface of the semiconductor laminate portion to reach at least the light-emitting layer. In such a manner, light is released from an o
7015515 Group III nitride compound semiconductor device having a superlattice structure March 21, 2006
After one of layers constituting a superlattice structure is formed by an MOCVD method, NH.sub.3 gas is circulated together with H.sub.2 gas as a carrier gas to thereby perform a purge step. After the purge step, a next layer is formed.
6831305 Semiconductor light-emitting device December 14, 2004
A group III nitride compound semiconductor light-emitting element of a flip chip bonding type for emitting light with a wavelength not longer than 400 nm is coupled to a Zener diode, and the light-emitting element and the Zener diode coupled to each other are sealed with a metal casing h
6794690 Group III nitride compound semiconductor light-emitting element September 21, 2004
A Group III nitride compound semiconductor light-emitting element (flip chip type light-emitting element) provided with a p-side electrode and an n-side electrode formed on one surface side, wherein the p-side electrode includes: a first metal layer containing Ag and formed on a p-type
6777805 Group-III nitride compound semiconductor device August 17, 2004
An object of the present invention is to provide a large-size light-emitting device from which uniform light emission can be obtained.That is, in the present invention, in a device having an outermost diameter of not smaller than 700 .mu.m, a distance from an n electrode to a farthest po
6774025 Method for producing group III nitride compound semiconductor light-emitting element August 10, 2004
After a p seat electrode is laminated on a light-transmissive electrode, the two electrodes are heated at a relatively low temperature to thereby remove gas (degassing) from between the two electrodes. Then, the two electrodes are alloyed with each other at a high temperature.

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