| Patent Number |
Title Of Patent |
Date Issued |
| 7498620 |
Integration of phosphorus emitter in an NPN device in a BiCMOS process |
March 3, 2009 |
| According to one exemplary embodiment, a heterojunction bipolar transistor includes a base situated on a substrate. The heterojunction bipolar transistor can be an NPN silicon-germanium heterojunction bipolar transistor, for example. The heterojunction bipolar transistor further incl |
| 7462923 |
Bipolar transistor formed using selective and non-selective epitaxy for base integration in a Bi |
December 9, 2008 |
| According to one exemplary embodiment, a bipolar transistor includes an active area situated between first and second isolation regions in a substrate. The bipolar transistor further includes an epitaxial extension layer situated on the active area, where the epitaxial extension layer |
| 7335547 |
Method for effective BiCMOS process integration |
February 26, 2008 |
| According to an exemplary embodiment, a method for integrating bipolar and CMOS devices on a substrate, where the substrate includes bipolar and CMOS regions and has a sacrificial oxide layer situated thereon, includes removing a portion of the sacrificial oxide layer in the bipolar regi |
| 7297992 |
Method and structure for integration of phosphorous emitter in an NPN device in a BiCMOS process |
November 20, 2007 |
| According to one exemplary embodiment, a heterojunction bipolar transistor includes a base situated on a substrate. The heterojunction bipolar transistor can be an NPN silicon-germanium heterojunction bipolar transistor, for example. The heterojunction bipolar transistor further incl |
| 7291898 |
Selective and non-selective epitaxy for base integration in a BiCMOS process and related structu |
November 6, 2007 |
| According to one exemplary embodiment, a bipolar transistor includes an active area situated between first and second isolation regions in a substrate. The bipolar transistor further includes an epitaxial extension layer situated on the active area, where the epitaxial extension layer |
| 7235861 |
NPN transistor having reduced extrinsic base resistance and improved manufacturability |
June 26, 2007 |
| A method for fabricating an NPN bipolar transistor comprises forming a base layer on a top surface of a substrate. The NPN bipolar transistor may be an NPN silicon-germanium heterojunction bipolar transistor. The method for fabricating the NPN bipolar transistor may further comprise a |
| 7064361 |
NPN transistor having reduced extrinsic base resistance and improved manufacturability |
June 20, 2006 |
| According to one exemplary embodiment, an NPN bipolar transistor comprises a base layer situated over a collector, where the base layer comprises an intrinsic base region and an extrinsic base region. The NPN bipolar transistor may be, for example, an NPN silicon-germanium heterojunction |
| 6893931 |
Reducing extrinsic base resistance in an NPN transistor |
May 17, 2005 |
| A method for fabricating an NPN bipolar transistor comprises forming a base layer on a top surface of a substrate. The NPN bipolar transistor may be an NPN silicon-germanium heterojunction bipolar transistor. The method for fabricating the NPN bipolar transistor may further comprise a ca |
| 6830982 |
Method for reducing extrinsic base resistance and improving manufacturability in an NPN transist |
December 14, 2004 |
| According to one exemplary embodiment, an NPN bipolar transistor comprises a base layer situated over a collector, where the base layer comprises an intrinsic base region and an extrinsic base region. The NPN bipolar transistor may be, for example, an NPN silicon-germanium heterojunction |
| 6781214 |
Metastable base in a high-performance HBT |
August 24, 2004 |
| According to one exemplary embodiment, a heterojunction bipolar transistor is fabricated by forming a metastable epitaxial silicon-germaniuim base on a collector. The metastable epitaxial silicon-germanium base, for example, may have a concentration of germanium greater than 20.0 atomic |
| 6759674 |
Band gap compensated HBT |
July 6, 2004 |
| According to one exemplary embodiment, a heterojunction bipolar transistor comprises a base having a concentration of a first material at a first depth, where the first material impedes the diffusion of a base dopant. The first material also causes a change in band gap at the first depth |
| 6680235 |
Method for fabricating a selective eptaxial HBT emitter |
January 20, 2004 |
| According to one exemplary embodiment, a heterojunction bipolar transistor comprises a base having a top surface. The heterojunction bipolar transistor further comprises an epitaxial emitter selectively situated on the top surface of the base. For example, the epitaxial emitter may be |
| 6673688 |
Method for eliminating collector-base band gap in an HBT |
January 6, 2004 |
| According to one exemplary embodiment, a heterojunction bipolar transistor comprises a base having a concentration of germanium, where the concentration of germanium decreases between a first depth and a second depth in the base. According to this exemplary embodiment, the base of the |
| 6639256 |
Structure for eliminating collector-base band gap discontinuity in an HBT |
October 28, 2003 |
| According to one exemplary embodiment, a heterojunction bipolar transistor comprises a base having a concentration of germanium, where the concentration of germanium decreases between a first depth and a second depth in the base. According to this exemplary embodiment, the base of the |
| 6617619 |
Structure for a selective epitaxial HBT emitter |
September 9, 2003 |
| According to one exemplary embodiment, a heterojunction bipolar transistor comprises a base having a top surface. The heterojunction bipolar transistor further comprises an epitaxial emitter selectively situated on the top surface of the base. For example, the epitaxial emitter may be |
| 6586297 |
Method for integrating a metastable base into a high-performance HBT and related structure |
July 1, 2003 |
| According to one exemplary embodiment, a heterojunction bipolar transistor is fabricated by forming a metastable epitaxial silicon-germaniuim base on a collector. The metastable epitaxial silicon-gernaniuim base, for example, may have a concentration of germanium greater than 20.0 atomic |
