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Inventor: U; Aung San
Address: Rangoon, BU
No. of patents: 1
Patents:
| Patent Number |
Title Of Patent |
Date Issued |
| 4086694 |
Method of making direct metal contact to buried layer |
May 2, 1978 |
| An integrated circuit having a direct metal contact to a buried layer is fabricated by first diffusing said buried layer into a substrate and growing thereon an epitaxial layer. After emitter diffusion into the epitaxial layer and emitter oxidation, a sink hole is etched through the |
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