| Patent Number |
Title Of Patent |
Date Issued |
| 8293645 |
Method for forming photovoltaic cell |
October 23, 2012 |
| A photovoltaic cell manufacturing method is disclosed. Methods include manufacturing a photovoltaic cell having a selective emitter and buried contact (electrode) structure utilizing nanoimprint technology. The methods include providing a semiconductor substrate having a first surfac |
| 8133661 |
Superimpose photomask and method of patterning |
March 13, 2012 |
| Provided is a photomask that includes a substrate having a first region and a second region, a first pattern disposed in the first region of the substrate, and a second pattern disposed in the second region of the substrate. The first and second patterns are a decomposition of a design |
| 8120767 |
Mask making decision for manufacturing (DFM) on mask quality control |
February 21, 2012 |
| The present disclosure provide a method for making a mask. The method includes assigning a plurality of pattern features to different data types; writing the plurality of pattern features on a mask; inspecting the plurality of pattern features with different inspection sensitivities |
| 7571421 |
System, method, and computer-readable medium for performing data preparation for a mask design |
August 4, 2009 |
| A method, computer-readable medium, and system for performing data preparation are provided. An integrated circuit design is received, and a plurality of pre-optical proximity correction processes are invoked such that the plurality of pre-optical proximity correction processes are p |
| 7444199 |
Method for preparing mask and wafer data files |
October 28, 2008 |
| A method for converting a data file into a writer file for a mask writer is provided. A plurality of sub-files is created from the data file. The plurality of sub-files is transferred to the mask writer. A plurality of writer files is created from the plurality of sub-files at the mask |
| 6841313 |
Photomask with dies relating to different functionalities |
January 11, 2005 |
| A photomask having dies relating to different functionalities is disclosed. A photomask for performing lithography in conjunction with fabrication of one or more semiconductor devices includes one or more first semiconductor dies and one or more second semiconductor dies. Each first semi |
| 6495297 |
Type mask for combining off axis illumination and attenuating phase shifting mask patterns |
December 17, 2002 |
| A mask and method of forming a mask for forming electrode patterns having both closely spaced lines and lines with greater separation between them. The mask uses a pattern formed using attenuating phase shifting material for the region of the mask with lines with greater separation and a |
| 6311319 |
Solving line-end shortening and corner rounding problems by using a simple checking rule |
October 30, 2001 |
| A methodolgy is described which allows a variety of optical proximity corrections to be added to a mask pattern at low cost and with a view to minimizing the number of electron beam exposures that will be needed later when the reticle is prepared. The basic approach is to add serifs and/ |
| 6150058 |
Method of making attenuating phase-shifting mask using different exposure doses |
November 21, 2000 |
| A mask and method of forming a mask for forming electrode patterns having both closely spaced lines and lines with greater separation between them. The mask uses a pattern formed using attenuating phase shifting material for the region of the mask with lines with greater separation and a |
| 5981109 |
Using (LaNiO.sub.3) .sub.X (TiO.sup.2) .sub.1-X and (LaNiO.sub.3) .sub.X (Ta.sub.2 O.sub.5) .sub |
November 9, 1999 |
| An attenuating phase shifting photomask is formed using attenuating phase shifting composite material combining the optical properties of a first material having a high extinction coefficient and a second material having a high index of refraction. The first material is LaNiO.sub.3 and t |
| 5667919 |
Attenuated phase shift mask and method of manufacture thereof |
September 16, 1997 |
| An attenuated Phase Shift Mask (PSM) blank and an attenuated Phase Shift Mask (PSM), and a method by which the attenuated Phase Shift Mask (PSM) blank and the attenuated Phase Shift Mask (PSM) may be formed. To form the attenuated Phase Shift Mask (PSM) blank there is first provided a |
