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Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Tu; Chih-Chiang
Address:
Tauyen, TW
No. of patents:
12
Patents:












Patent Number Title Of Patent Date Issued
8563351 Method for manufacturing photovoltaic device October 22, 2013
A photovoltaic device manufacturing method is disclosed. Methods include manufacturing a photovoltaic cell using nanoimprint technology to define individual cell units of the photovoltaic device. The methods can include providing a substrate; forming a first conductive layer over the
8293645 Method for forming photovoltaic cell October 23, 2012
A photovoltaic cell manufacturing method is disclosed. Methods include manufacturing a photovoltaic cell having a selective emitter and buried contact (electrode) structure utilizing nanoimprint technology. The methods include providing a semiconductor substrate having a first surfac
8133661 Superimpose photomask and method of patterning March 13, 2012
Provided is a photomask that includes a substrate having a first region and a second region, a first pattern disposed in the first region of the substrate, and a second pattern disposed in the second region of the substrate. The first and second patterns are a decomposition of a design
8120767 Mask making decision for manufacturing (DFM) on mask quality control February 21, 2012
The present disclosure provide a method for making a mask. The method includes assigning a plurality of pattern features to different data types; writing the plurality of pattern features on a mask; inspecting the plurality of pattern features with different inspection sensitivities
7571421 System, method, and computer-readable medium for performing data preparation for a mask design August 4, 2009
A method, computer-readable medium, and system for performing data preparation are provided. An integrated circuit design is received, and a plurality of pre-optical proximity correction processes are invoked such that the plurality of pre-optical proximity correction processes are p
7444199 Method for preparing mask and wafer data files October 28, 2008
A method for converting a data file into a writer file for a mask writer is provided. A plurality of sub-files is created from the data file. The plurality of sub-files is transferred to the mask writer. A plurality of writer files is created from the plurality of sub-files at the mask
6841313 Photomask with dies relating to different functionalities January 11, 2005
A photomask having dies relating to different functionalities is disclosed. A photomask for performing lithography in conjunction with fabrication of one or more semiconductor devices includes one or more first semiconductor dies and one or more second semiconductor dies. Each first semi
6495297 Type mask for combining off axis illumination and attenuating phase shifting mask patterns December 17, 2002
A mask and method of forming a mask for forming electrode patterns having both closely spaced lines and lines with greater separation between them. The mask uses a pattern formed using attenuating phase shifting material for the region of the mask with lines with greater separation and a
6311319 Solving line-end shortening and corner rounding problems by using a simple checking rule October 30, 2001
A methodolgy is described which allows a variety of optical proximity corrections to be added to a mask pattern at low cost and with a view to minimizing the number of electron beam exposures that will be needed later when the reticle is prepared. The basic approach is to add serifs and/
6150058 Method of making attenuating phase-shifting mask using different exposure doses November 21, 2000
A mask and method of forming a mask for forming electrode patterns having both closely spaced lines and lines with greater separation between them. The mask uses a pattern formed using attenuating phase shifting material for the region of the mask with lines with greater separation and a
5981109 Using (LaNiO.sub.3) .sub.X (TiO.sup.2) .sub.1-X and (LaNiO.sub.3) .sub.X (Ta.sub.2 O.sub.5) .sub November 9, 1999
An attenuating phase shifting photomask is formed using attenuating phase shifting composite material combining the optical properties of a first material having a high extinction coefficient and a second material having a high index of refraction. The first material is LaNiO.sub.3 and t
5667919 Attenuated phase shift mask and method of manufacture thereof September 16, 1997
An attenuated Phase Shift Mask (PSM) blank and an attenuated Phase Shift Mask (PSM), and a method by which the attenuated Phase Shift Mask (PSM) blank and the attenuated Phase Shift Mask (PSM) may be formed. To form the attenuated Phase Shift Mask (PSM) blank there is first provided a










 
 
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