| Patent Number |
Title Of Patent |
Date Issued |
| 6483660 |
Disk drive unit having multiple disks arranged in a plane |
November 19, 2002 |
| A magnetic disk unit of form factor size with a low power consumption, a short average seek time and a high performance. The unit includes at least two spindles for supporting and rotating magnetic disks. Specifically, two 1.3-inch disks, three 1.0-inch disks or four 0.7-inch disks are a |
| 5889573 |
Thin film transistor substrate, manufacturing method thereof, liquid crystal display panel and l |
March 30, 1999 |
| The present invention concerns an active-matrix addressed TFT substrate using a thin film transistor, a manufacturing method and an anodic oxidation method thereof, a liquid crystal display panel using the TFT substrate and a liquid crystal display equipment using the liquid crystal |
| 5854997 |
Electronic interpreter utilizing linked sets of sentences |
December 29, 1998 |
| An electronic interpreter for interpreting sentences between a first person and a second person. The electronic interpreter includes a memory for storing sentence data in a data structure having a plurality of sets of sentences including translations of the sentences, wherein each senten |
| 5672523 |
Thin film transistor substrate, manufacturing method thereof, liquid crystal display panel and l |
September 30, 1997 |
| The present invention concerns an active-matrix addressed TFT substrate using a thin film transistor, a manufacturing method and an anodic oxidation method thereof, a liquid crystal display panel using the TFT substrate and a liquid crystal display equipment using the liquid crystal |
| 5604142 |
Method of making an EPROM with peripheral transistor |
February 18, 1997 |
| This invention discloses EEPROM which increases an erasing voltage V.sub.pp to be applied in a data write cycle by increasing an avalanche breakdown voltage between a source region and a semiconductor substrate in order to improve erasing efficiency, and employs a structure which strengt |
| 5359206 |
Thin film transistor substrate, liquid crystal display panel and liquid crystal display equipmen |
October 25, 1994 |
| Disclosed is an active-matrix addressed TFT substrate using a thin film transistor, a manufacturing method and an anodic oxidation method thereof, a liquid crystal display panel using the TFT substrate and a liquid crystal display equipment using the liquid crystal display panel. In the |
| 5266825 |
Thin-film device |
November 30, 1993 |
| A thin-film transistor using hydrogenated amorphous silicon (a-Si:H), and particularly a thin-film device such as a thin-film transistor having high conductivity, large drivability and high process margin, and a display panel using the same transistors. The object of the invention is to |
| 5200634 |
Thin film phototransistor and photosensor array using the same |
April 6, 1993 |
| A thin film phototransistor is provided having a field effect transistor structure where at least one end of the gate electrode is not overlapped with an electrode neighboring the end. Such a thin film phototransistor has: (1) a function as a photosensor and a switching function; (2) a h |
| 5189497 |
Semiconductor memory device |
February 23, 1993 |
| This invention discloses an EEPROM which increases an erasing voltage V.sub.pp to be applied during a data write cycle by increasing an avalanche breakdown voltage between a source region and a semiconductor substrate in the memory cell transistor in order to improve the erasing effi |
| 5153690 |
Thin-film device |
October 6, 1992 |
| A thin-film transistor using hydrogenated amorphous silicon (a-Si:H), and particularly a thin-film device such as a thin-film transistor having high conductivity, large drivability and high process margin, and a display panel using the same transistors. The object of the invention is to |
| 5130773 |
Semiconductor device with photosensitivity |
July 14, 1992 |
| A photosensor with improved performance is provided with a gate electrode structure for a field effect transistor that includes a semiconductor layer photosensitivity. The gate electrode can be constituted with a kind of metal or a low resistance semiconductor in conjunction with a s |
| 5079603 |
Semiconductor memory device |
January 7, 1992 |
| This invention discloses an EEPROM which increases an erasing voltage V.sub.pp to be applied during a data write cycle by increasing an avalanche breakdown voltage between a source region and a semiconductor substrate in the memory cell transistor in order to improve the erasing effi |
| 5032531 |
Method of manufacturing active matrix panel |
July 16, 1991 |
| In a first manufacturing step of an active matrix liquid-crystal panel, a transparent conductor film and a metal film are sequentially accumulated on a substrate in this order so as to form a two-layer film. The two-layer film including the transparent conductor film and the metal film i |
| 4996571 |
Non-volatile semiconductor memory device erasing operation |
February 26, 1991 |
| The invention relates to a tunnel erasing device for a non-volatile semiconductor memory device comprising a source region and a drain region, a floating gate electrode having a part superposed on at least one of them through a gate insulating layer, and a control gate electrode disposed |
| 4990981 |
Thin film transistor and a liquid crystal display device using same |
February 5, 1991 |
| A thin film transistor is disclosed, which comprises a gate electrode, a gate insulating layer, a semiconductor layer, a source electrode, and a drain electrode, which are disposed on a predetermined substrate, and which is so constructed that the semiconductor layer doesn't exist in any |
| 4972371 |
Semiconductor memory device |
November 20, 1990 |
| An EEPROM in which a memory cell is constituted by a floating gate electrode, a control gate electrode, a first semiconductor region provided in a main surface portion of the semiconductor substrate on an end side of the gate electrodes to which the data line is connected, and a second |
| 4955697 |
Liquid crystal display device and method of driving the same |
September 11, 1990 |
| A liquid crystal display panel and a method of driving the display panel are disclosed. The display panel and the driving method can reduce the leakage of a gate driving voltage to a first pixel electrode due to the parasitic capacitance of a thin film transistor, and can lessen an adver |
| 4909602 |
Liquid crystal display and method of driving the same |
March 20, 1990 |
| An active matrix liquid crystal display is disclosed in which a better image quality is obtained by specifying a relation between voltages applied to the liquid crystal display. Also, a better holding characteristic is obtained by selecting the channel resistance R.sub.OFF of a thin |
| 4683487 |
Heterojunction bipolar transistor |
July 28, 1987 |
| A collector lead-out portion and a base lead-out portion are formed so as to oppose to each other in such a manner that active regions including a collector, a base and an emitter are sandwiched therebetween. The collector lead-out portion and the base lead-out portion are formed by ion |
