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Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Tsukada; Toshihisa
Address:
Musashino, JP
No. of patents:
19
Patents:












Patent Number Title Of Patent Date Issued
6483660 Disk drive unit having multiple disks arranged in a plane November 19, 2002
A magnetic disk unit of form factor size with a low power consumption, a short average seek time and a high performance. The unit includes at least two spindles for supporting and rotating magnetic disks. Specifically, two 1.3-inch disks, three 1.0-inch disks or four 0.7-inch disks are a
5889573 Thin film transistor substrate, manufacturing method thereof, liquid crystal display panel and l March 30, 1999
The present invention concerns an active-matrix addressed TFT substrate using a thin film transistor, a manufacturing method and an anodic oxidation method thereof, a liquid crystal display panel using the TFT substrate and a liquid crystal display equipment using the liquid crystal
5854997 Electronic interpreter utilizing linked sets of sentences December 29, 1998
An electronic interpreter for interpreting sentences between a first person and a second person. The electronic interpreter includes a memory for storing sentence data in a data structure having a plurality of sets of sentences including translations of the sentences, wherein each senten
5672523 Thin film transistor substrate, manufacturing method thereof, liquid crystal display panel and l September 30, 1997
The present invention concerns an active-matrix addressed TFT substrate using a thin film transistor, a manufacturing method and an anodic oxidation method thereof, a liquid crystal display panel using the TFT substrate and a liquid crystal display equipment using the liquid crystal
5604142 Method of making an EPROM with peripheral transistor February 18, 1997
This invention discloses EEPROM which increases an erasing voltage V.sub.pp to be applied in a data write cycle by increasing an avalanche breakdown voltage between a source region and a semiconductor substrate in order to improve erasing efficiency, and employs a structure which strengt
5359206 Thin film transistor substrate, liquid crystal display panel and liquid crystal display equipmen October 25, 1994
Disclosed is an active-matrix addressed TFT substrate using a thin film transistor, a manufacturing method and an anodic oxidation method thereof, a liquid crystal display panel using the TFT substrate and a liquid crystal display equipment using the liquid crystal display panel. In the
5266825 Thin-film device November 30, 1993
A thin-film transistor using hydrogenated amorphous silicon (a-Si:H), and particularly a thin-film device such as a thin-film transistor having high conductivity, large drivability and high process margin, and a display panel using the same transistors. The object of the invention is to
5200634 Thin film phototransistor and photosensor array using the same April 6, 1993
A thin film phototransistor is provided having a field effect transistor structure where at least one end of the gate electrode is not overlapped with an electrode neighboring the end. Such a thin film phototransistor has: (1) a function as a photosensor and a switching function; (2) a h
5189497 Semiconductor memory device February 23, 1993
This invention discloses an EEPROM which increases an erasing voltage V.sub.pp to be applied during a data write cycle by increasing an avalanche breakdown voltage between a source region and a semiconductor substrate in the memory cell transistor in order to improve the erasing effi
5153690 Thin-film device October 6, 1992
A thin-film transistor using hydrogenated amorphous silicon (a-Si:H), and particularly a thin-film device such as a thin-film transistor having high conductivity, large drivability and high process margin, and a display panel using the same transistors. The object of the invention is to
5130773 Semiconductor device with photosensitivity July 14, 1992
A photosensor with improved performance is provided with a gate electrode structure for a field effect transistor that includes a semiconductor layer photosensitivity. The gate electrode can be constituted with a kind of metal or a low resistance semiconductor in conjunction with a s
5079603 Semiconductor memory device January 7, 1992
This invention discloses an EEPROM which increases an erasing voltage V.sub.pp to be applied during a data write cycle by increasing an avalanche breakdown voltage between a source region and a semiconductor substrate in the memory cell transistor in order to improve the erasing effi
5032531 Method of manufacturing active matrix panel July 16, 1991
In a first manufacturing step of an active matrix liquid-crystal panel, a transparent conductor film and a metal film are sequentially accumulated on a substrate in this order so as to form a two-layer film. The two-layer film including the transparent conductor film and the metal film i
4996571 Non-volatile semiconductor memory device erasing operation February 26, 1991
The invention relates to a tunnel erasing device for a non-volatile semiconductor memory device comprising a source region and a drain region, a floating gate electrode having a part superposed on at least one of them through a gate insulating layer, and a control gate electrode disposed
4990981 Thin film transistor and a liquid crystal display device using same February 5, 1991
A thin film transistor is disclosed, which comprises a gate electrode, a gate insulating layer, a semiconductor layer, a source electrode, and a drain electrode, which are disposed on a predetermined substrate, and which is so constructed that the semiconductor layer doesn't exist in any
4972371 Semiconductor memory device November 20, 1990
An EEPROM in which a memory cell is constituted by a floating gate electrode, a control gate electrode, a first semiconductor region provided in a main surface portion of the semiconductor substrate on an end side of the gate electrodes to which the data line is connected, and a second
4955697 Liquid crystal display device and method of driving the same September 11, 1990
A liquid crystal display panel and a method of driving the display panel are disclosed. The display panel and the driving method can reduce the leakage of a gate driving voltage to a first pixel electrode due to the parasitic capacitance of a thin film transistor, and can lessen an adver
4909602 Liquid crystal display and method of driving the same March 20, 1990
An active matrix liquid crystal display is disclosed in which a better image quality is obtained by specifying a relation between voltages applied to the liquid crystal display. Also, a better holding characteristic is obtained by selecting the channel resistance R.sub.OFF of a thin
4683487 Heterojunction bipolar transistor July 28, 1987
A collector lead-out portion and a base lead-out portion are formed so as to oppose to each other in such a manner that active regions including a collector, a base and an emitter are sandwiched therebetween. The collector lead-out portion and the base lead-out portion are formed by ion










 
 
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