| Patent Number |
Title Of Patent |
Date Issued |
| 6980275 |
Electro-optical device |
December 27, 2005 |
| A highly reliable liquid crystal display device in which the drive circuit region is protected, which comprises a first substrate having thereon a display region and a drive circuit region comprising a drive circuit for controlling the display in said display region and a second substrat |
| 6304307 |
Liquid crystal display and method of manufacturing the same |
October 16, 2001 |
| There is provided an active matrix liquid crystal display having high reliability with improved yield of production.In an active matrix liquid crystal display in which peripheral driving circuits are in contact with a liquid crystal material, spacers are dispersed in peripheral driving c |
| 6236444 |
Liquid crystal device with drive circuits on both substrates |
May 22, 2001 |
| A highly reliable liquid crystal display device in which the drive circuit region is protected, which comprises a first substrate having thereon a display region and a drive circuit region comprising a drive circuit for controlling the display in said display region and a second substrat |
| 5815231 |
Liquid crystal display and method of manufacturing the same |
September 29, 1998 |
| There is provided an active matrix liquid crystal display having high reliability with improved yield of production.In an active matrix liquid crystal display in which peripheral driving circuits are in contact with a liquid crystal material, spacers are dispersed in peripheral driving c |
| 5747355 |
Method for producing a transistor using anodic oxidation |
May 5, 1998 |
| A method for producing a thin-film transistor (TFT) in which the gate electrode is offset from the source and drain without detriment to the characteristics of the device or to manufacturing yield, and a structure for such a TFT, are disclosed. A gate electrode is formed using a material |
| 5619045 |
Thin film transistor |
April 8, 1997 |
| A thin film transistor comprising a gate electrode offset from source and drain, which comprises a substrate having thereon a gate electrode fabricated on an active region provided on the substrate, wherein, an anodic oxide of the material constituting the gate electrode is provided |
| 5576231 |
Process for fabricating an insulated gate field effect transistor with an anodic oxidized gate e |
November 19, 1996 |
| A thin film transistor comprising a gate electrode offset from source and drain, which comprises a substrate having thereon a gate electrode fabricated on an active region provided on the substrate, wherein, an anodic oxide of the material constituting the gate electrode is provided |
