| Patent Number |
Title Of Patent |
Date Issued |
| 7553689 |
Semiconductor device with micro-lens and method of making the same |
June 30, 2009 |
| A semiconductor device including a semiconductor substrate having a photosensor formed therein; a first layer overlying the substrate, the first layer includes a portion having a generally concave shaped surface being the negative shaped of a micro-lens to be formed there over; a sec |
| 7507596 |
Method of fabricating a high quantum efficiency photodiode |
March 24, 2009 |
| The present invention is CMOS image sensor and its method of fabrication. This invention provides an efficient structure to improve the quantum efficiency of a CMOS image sensor with borderless contact. The image sensor comprises a N-well/P-substrate type photodiode with borderless c |
| 7479403 |
Pinned photodiode integrated with trench isolation and fabrication method |
January 20, 2009 |
| A photo sensor with pinned photodiode structure integrated with a trench isolation structure. The photo sensor includes a substrate of a first conductivity type, at least one trench in the substrate, at least one doped region of the first conductivity type, and at least one doped reg |
| 7443005 |
Lens structures suitable for use in image sensors and method for making the same |
October 28, 2008 |
| An image sensor includes a double-microlens structure with an outer microlens aligned over an inner microlens, both microlenses aligned over a corresponding photosensor. The inner or outer microlens may be formed by a silylation process in which a reactive portion of a photoresist ma |
| 7432576 |
Grid metal design for large density CMOS image sensor |
October 7, 2008 |
| A new grid metal design for image sensors is disclosed which is comprised of a semiconductor image sensor chip having a pixel region covering most of the chip and a logic circuit region on the chip periphery. The pixel region contains, an array of image pixels where for each image pixel |
| 7423306 |
CMOS image sensor devices |
September 9, 2008 |
| A pixel comprises a substrate comprising a first well region formed in a top portion of the substrate, having a first conductivity type. A plurality of shallow trench isolation (STI) structures is formed in the first well region of the substrate, defining a pixel region over the subs |
| 7332368 |
Light guide for image sensor |
February 19, 2008 |
| A new method to form an image sensor device is achieved. The method comprises forming an image sensing array in a substrate comprising a plurality of light detecting diodes with spaces between the diodes. A first dielectric layer is formed overlying the diodes but not the spaces. The |
| 7232697 |
Semiconductor device having enhanced photo sensitivity and method for manufacture thereof |
June 19, 2007 |
| Provided are a semiconductor device and a method for its manufacture. In one example, the method includes forming an isolation structure having a first refraction index over a sensor embedded in a substrate. A first layer having a second refraction index that is different from the first |
| 7145190 |
Pinned photodiode integrated with trench isolation and fabrication method |
December 5, 2006 |
| A photo sensor with pinned photodiode structure integrated with a trench isolation structure. The photo sensor includes a substrate of a first conductivity type, at least one trench in the substrate, at least one doped region of the first conductivity type, and at least one doped reg |
| 7038232 |
Quantum efficiency enhancement for CMOS imaging sensor with borderless contact |
May 2, 2006 |
| The present invention is a CMOS image sensor and its method of fabrication. This invention provides an efficient structure to improve the quantum efficiency of a CMOS image sensor with borderless contact. The image sensor comprises a N-well/P-substrate type photodiode with borderless |
| 6815787 |
Grid metal design for large density CMOS image sensor |
November 9, 2004 |
| A new grid metal design for image sensors is disclosed which is comprised of a semiconductor image sensor chip having a pixel region covering most of the chip and a logic circuit region on the chip periphery. The pixel region contains an array of image pixels where for each image pixel t |
| 6707080 |
Method for making spectrally efficient photodiode structures for CMOS color imagers |
March 16, 2004 |
| A method for making an array of photodiodes with more uniform optical spectral response for the red, green, and blue pixel cells on a CMOS color imager is achieved. After forming a field oxide on a substrate to electrically isolate device areas for CMOS circuits, an array of deep N d |
| 6642076 |
Asymmetrical reset transistor with double-diffused source for CMOS image sensor |
November 4, 2003 |
| A new method to form CMOS image sensors in the manufacture of an integrated circuit device is achieved. The method comprises providing a semiconductor substrate. Sensor diodes are formed in the semiconductor substrate each comprising a first terminal and a second terminal. Gates are form |
| 6531752 |
Stripe photodiode element with high quantum efficiency for an image sensor cell |
March 11, 2003 |
| A method of fabricating a stripe photodiode element, for an image sensor cell, has been developed. The stripe photodiode element is comprised of a narrow width, serpentine shaped, lightly doped N type region, in a P well region. The use of the serpentine shaped region results in increase |
| 6518085 |
Method for making spectrally efficient photodiode structures for CMOS color imagers |
February 11, 2003 |
| A method for making an array of photodiodes with more uniform optical spectral response for the red, green, and blue pixel cells on a CMOS color imager is achieved. After forming a field oxide on a substrate to electrically isolate device areas for CMOS circuits, an array of deep N d |
| 6372603 |
Photodiode with tightly-controlled junction profile for CMOS image sensor with STI process |
April 16, 2002 |
| A method for forming a high performance photodiode with tightly-controlled junction profile for CMOS image sensor with STI process. The following steps are performed: providing a substrate; forming a hard mask layer for defining a pattern on the substrate; etching the substrate on the su |
| 6323054 |
Lateral P-I-N photodiode element with high quantum efficiency for a CMOS image sensor |
November 27, 2001 |
| A process for fabricating a lateral photodiode element, for an image sensor cell, with an increased depletion region, has been developed. The process features protecting a portion of the semiconductor substrate from ion implantation procedures used to create the P well, and the N well |
| 6309905 |
Stripe photodiode element with high quantum efficiency for an image sensor cell |
October 30, 2001 |
| A method of fabricating a stripe photodiode element, for an image sensor cell, has been developed. The stripe photodiode element is comprised of a narrow width, serpentine shaped, lightly doped N type region, in a P well region. The use of the serpentine shaped region results in increase |
