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Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Treichel; Helmuth
Address:
Augsburg, DE
No. of patents:
5
Patents:












Patent Number Title Of Patent Date Issued
6057229 Method for metallizing submicron contact holes in semiconductor bodies May 2, 2000
Submicron contact holes in semiconductor bodies are metalized in a single operation. A titanium-rich layer is first deposited, which is followed by a low-resistance TiSi.sub.2 layer. The two layers are thus deposited in one contiguous CVD process inside a single CVD chamber.
5629053 Method for manufacturing microcrystalline cubic boron-nitride-layers May 13, 1997
The method of the present invention provides in a simple manner, the deposition of boron nitride layers with microcrystalline cubic structure which are suitable as insulating layers in VLSI-circuits, as mask membranes in x-ray lithography, as well as coating hard substances. Due to t
5478780 Method and apparatus for producing conductive layers or structures for VLSI circuits December 26, 1995
Methods and apparatus for producing conductive layers or structures for VLSI circuits. In a method for producing conductive layers or structures for VLSI circuits, at least two method stages are implemented in direct succession in different chambers of a high-vacuum system without in
4990365 Method for producing silicon boronitride layers February 5, 1991
To create silicon boronitride layers that are utilized as intermetallization layers and/or as final passivation layers, the present invention provides a method wherein fluid initial compounds that already molecularly contain a part of the target composition of the silicon boronitride
4755486 Method of producing a defined arsenic doping in silicon semiconductor substrates July 5, 1988
A method of producing a defined arsenic doping in silicon semiconductor substrates is provided. Preferably, the arsenic doping is produced in the sidewalls and floors of trenches having high aspect ratio which are etched into the substrates. An arseno-silicate glass layer is deposited in










 
 
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