| Patent Number |
Title Of Patent |
Date Issued |
| 7169706 |
Method of using an adhesion precursor layer for chemical vapor deposition (CVD) copper depositio |
January 30, 2007 |
| An exemplary embodiment is related to a method of using an adhesion precursor in an integrated circuit fabrication process. The method includes providing a gas of material over a dielectric material and providing a copper layer over an adhesion precursor layer. The adhesion precursor |
| 6998337 |
Thermal annealing for Cu seed layer enhancement |
February 14, 2006 |
| Semiconductor devices with highly reliable Cu interconnects exhibiting reduced resistance are formed by sequentially depositing a seed layer by PVD, depositing a conformal seed layer enhancement film by electroplating, and then thermal annealing the seed layer enhancement film in an |
| 6992004 |
Implanted barrier layer to improve line reliability and method of forming same |
January 31, 2006 |
| A method for manufacturing an integrated circuit having improved electromigration characteristics includes forming an aperture in an interlevel dielectric layer and providing a barrier layer in the aperture. The aperture is filled with a metal material and a barrier layer is provided |
| 6979642 |
Method of self-annealing conductive lines that separates grain size effects from alloy mobility |
December 27, 2005 |
| A method of forming a conductive structure such as a copper conductive structure, line, or via is optimized for large grain growth and distribution of alloy elements. The alloy elements can reduce electromigration problems associated with the conductive structure. The conductive stru |
| 6664187 |
Laser thermal annealing for Cu seedlayer enhancement |
December 16, 2003 |
| Semiconductor devices with highly reliable Cu interconnects exhibiting reduced resistance are formed by sequentially depositing a seedlayer by PVD, depositing a conformal seedlayer enhancement film by CVD, and then laser thermal annealing the seedlayer enhancement film in nitrogen to |
| 6589408 |
Non-planar copper alloy target for plasma vapor deposition systems |
July 8, 2003 |
| A non-planar target can be configured for use in a plasma vapor deposition (PVD) process in which ions bombard the non-planar target and cause alloy atoms present in the non-planar target to be knocked loose and form an alloy film layer. The target includes a top planar section having a |
| 6518167 |
Method of forming a metal or metal nitride interface layer between silicon nitride and copper |
February 11, 2003 |
| A method of forming a metal or metal nitride layer interface between a copper layer and a silicon nitride layer can include providing a metal organic gas or metal/metal nitride precursor over a copper layer, forming a metal or metal nitride layer from reactions between the metal organic |
