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Toda; Naohiro
Itami, JP
No. of patents:

Patent Number Title Of Patent Date Issued
5908503 Low defect density diamond single crystal and a process for the production of the same June 1, 1999
A colorless, transparent low defect density, synthetic type IIa diamond single crystal, in which the etch pits due to needle-shaped defects are at most 3.times.10.sup.5 pieces/cm.sup.2, and which can be applied to uses needing high crystallinity of diamond, for example, monochromators,
5668382 Ohmic electrode and method for forming it September 16, 1997
An ohmic electorde of the present invention comprises a contact electrode layer formed on a p-type diamond semiconductor layer formed on a substrate so as to be in ohmic contact with the p-type diamond semiconductor layer and to have low contact resistance and high heat resistance, and a
5096740 Production of cubic boron nitride films by laser deposition March 17, 1992
A highly pure cubic boron nitride film is formed on a substrate by a method which comprises irradiating an excimer laser on a target comprising boron atoms and optionally nitrogen atom and depositing cubic boron nitride on a substrate which is placed to face the target.

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