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Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Tihanyi; Jenoe
Address:
Kirchheim, DE
No. of patents:
79
Patents:


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Patent Number Title Of Patent Date Issued
7999343 Semiconductor component with a space-saving edge termination, and method for production of such August 16, 2011
An arrangement for use in a semiconductor component includes a semiconductor body and an edge structure. The semiconductor body having a first face, a second face, a first semiconductor zone of a first conductance type, at least one second semiconductor zone of a second conductance t
7724064 Circuit arrangement having a transistor component and a freewheeling element May 25, 2010
A circuit arrangement configured to drive a load is disclosed herein. The circuit arrangement comprises a first and a second supply potential terminal for application of a first supply potential and a second supply potential. A load terminal is provided between the first and second s
7560783 Metal-semiconductor contact, semiconductor component, integrated circuit arrangement and method July 14, 2009
The present invention relates to a metal-semiconductor contact comprising a semiconductor layer and comprising a metallization applied to the semiconductor layer, a high dopant concentration being introduced into the semiconductor layer such that a non-reactive metal-semiconductor co
7492208 MOSFET circuit having reduced output voltage oscillations during a switch-off operation February 17, 2009
The invention relates to a MOSFET circuit having reduced output voltage oscillations, in which a smaller CoolMOS transistor (T2) with a zener diode (Z1) connected upstream of its gate is located in parallel with a larger CoolMOS transistor (T1), so that, during a switch-off operation,
7453308 Circuit arrangement having a load transistor and a voltage limiting circuit and method for drivi November 18, 2008
The invention relates to a circuit arrangement having connecting terminals (K1, K2) for application of a supply voltage (V+) and having a load transistor (M) for connecting a load (Z) to the supply voltage, said load transistor having a control terminal (G) and a first and second load
7423325 Lateral field-effect-controllable semiconductor component for RF applications September 9, 2008
The present invention relates to a semiconductor component. The component includes a semiconductor body with a first semiconductor layer of a first conduction type and a second semiconductor layer of a second conduction type. The component includes, in the second semiconductor layer, a f
7301204 SOI component with increased dielectric strength and improved heat dissipation November 27, 2007
A semiconductor component arrangement comprises a semiconductor substrate of a first conduction type, an insulation layer arranged on the substrate, and a semiconductor layer arranged on the insulation layer. A semiconductor component is formed in said semiconductor layer. The semico
7211846 Transistor having compensation zones enabling a low on-resistance and a high reverse voltage May 1, 2007
A semiconductor component includes a semiconductor body having a substrate of a first conduction type and a first layer of a second conduction type that is located above the substrate. A channel zone of the first conduction type is formed in the first layer. A first terminal zone of
7173306 Vertical semiconductor component having a drift zone having a field electrode, and method for fa February 6, 2007
The invention relates to a method for fabricating a drift zone of a vertical semiconductor component and to a vertical semiconductor component having the following features: a semiconductor body (100) having a first side (101) and a second side (102), a drift zone (30) of a first c
7148736 Power switch December 12, 2006
The power switch has a first transistor, a limiting transistor, and an auxiliary transistor. The first transistor has a load path and a control electrode. The limiting transistor, which limits a voltage drop across the load path of the first transistor, has a load path connected in s
7091573 Power transistor August 15, 2006
The power transistor has a trench cell in a semiconductor body. A lower edge of the gate electrode has a profile which is not horizontal, i.e., not planar with respect to the field electrode.
7087981 Metal semiconductor contact, semiconductor component, integrated circuit arrangement and method August 8, 2006
The present invention relates to a metal-semiconductor contact comprising a semiconductor layer and comprising a metallization applied to the semiconductor layer, a high dopant concentration being introduced into the semiconductor layer such that a non-reactive metal-semiconductor co
7050763 Method and device for transferring a signal from a signal source to a signal sink in a system May 23, 2006
The system has at least two electronic units between which signals are transferred from a first electronic unit and a second electronic unit. The first electronic unit has a signal source. The second electronic unit has a signal sink. A signal to be transferred is converted into a li
7049656 Field-effect-controllable semiconductor configuration with a laterally extending channel zone May 23, 2006
A semiconductor configuration includes a semiconductor body with a first connection zone of a first conductivity type, a second connection zone of the first conductivity type, a channel zone of the first conductivity type, and at least one control electrode surrounded by an insulation
6891204 Semiconductor component having field-shaping regions May 10, 2005
A semiconductor element has a semiconductor body of a first conductivity type. The semiconductor body has a zone of a second conductivity type embedded. Further regions of the second conductivity type surround the zone of the second conductivity type like a well. The further regions are
6870201 High voltage resistant edge structure for semiconductor components March 22, 2005
The invention relates to a high voltage resistant edge structure in the edge region of a semiconductor component which has floating guard rings of the first conductivity type and inter-ring zones of the second conductivity type which are arranged between the floating guard rings, whe
6864535 Controllable semiconductor switching element that blocks in both directions March 8, 2005
The controllable semiconductor switching element blocks in both directions. The semiconductor switching element is formed with a first conduction region and a second conduction region of a first type of conductivity, a blocking region of a second type of conductivity which is disposed be
6861706 Compensation semiconductor component March 1, 2005
A compensation semiconductor component has a drift zone formed in a semiconductor body and at least one compensation zone formed in the edge region of the semiconductor body in the drift zone. The compensation zone is doped complementarily to the drift zone and connected by at least one
6812524 Field effect controlled semiconductor component November 2, 2004
A semiconductor component includes first and second connection zones formed in a semiconductor body, a channel zone surrounding the second connection zone in the semiconductor body, and a drift path that is formed between the channel zone and the first connection zone and contains a comp
6803629 Vertical field-effect transistor with compensation zones and terminals at one side of a semicond October 12, 2004
A controllable field-effect semiconductor component has a semiconductor body including a first surface, a first layer of a first conduction type, and a second layer of the first conduction type lying above the first layer. The semiconductor component also has a first terminal zone that c
6777726 MOSFET source, drain and gate regions in a trench between a semiconductor pillar and filling ins August 17, 2004
In a metal oxide semiconductor (MOS) field effect transistor configuration, a source, a drain and a gate are embedded between a semiconductor pillar that extends away from a semiconductor body and forms a body region. A filling insulator surrounds the semiconductor pillar and is situated
6768169 Transistor having compensation zones enabling a low on-resistance and a high reverse voltage July 27, 2004
A semiconductor component includes a semiconductor body having a substrate of a first conduction type and a first layer of a second conduction type that is located above the substrate. A channel zone of the first conduction type is formed in the first layer. A first terminal zone of the
6735065 Semiconductor module May 11, 2004
A semiconductor module includes a housing with at least one semiconductor component that is conductively connected to at least one output line. An integrated temperature sensor is also housed in the housing. This sensor is connected, via at least one of its load terminals, to a terminal
6717788 Temperature-protected semiconductor circuit configuration April 6, 2004
A temperature-protected semiconductor circuit configuration that has an integrated switching unit. The switching unit is formed of a semiconductor switch, a first integrated temperature sensor for driving the semiconductor switch when an over-temperature is reached, first and second
6693314 Junction field-effect transistor with more highly doped connecting region February 17, 2004
A junction field-effect transistor containing a semiconductor region with an inner region is described. In addition, a first and a second connecting region, respectively, are disposed within the semiconductor region. The first connecting region has the same conductivity type as the inner
6686626 Source-down power transistor February 3, 2004
The invention relates to a source-down power transistor, in which narrow trenches filled with insulated polysilicon are provided between a source pillar and a drain pillar. Inversion channels form on the side walls of the trenches when a positive drain voltage and a positive gate voltage
6686625 Field effect-controllable semiconductor component with two-directional blocking, and a method of February 3, 2004
The semiconductor component can be controlled by the field effect and it blocks in both directions. The component has a semiconductor body with a first connecting zone, a second connecting zone and a channel zone formed between the first and the second connecting zone. A control electrod
6639388 Free wheeling buck regulator with floating body zone switch October 28, 2003
A voltage transformer includes a pair of input terminals for applying an input voltage, a series circuit connected in parallel to the pair of input terminals of a first switch, and a low pass filter. The low pass filter has output terminals for connecting a load. A freewheeling circuit i
6628491 Semiconductor component with a circuit for driving an electrical load September 30, 2003
The semiconductor component has a circuit configuration for driving an electrical load. The circuit includes a control circuit with a power switch driven by a drive configuration and feeding a current to the load. The semiconductor component has a first temperature detector thermally
6617640 Field-effect-controllable semiconductor configuration with a laterally extending channel zone September 9, 2003
A semiconductor configuration includes a semiconductor body with a first connection zone of a first conductivity type, a second connection zone of the first conductivity type, a channel zone of the first conductivity type, and at least one control electrode surrounded by an insulation
6541804 Junction-isolated lateral MOSFET for high-/low-side switches April 1, 2003
The junction insulated lateral MOSFET is suitable for high/low side switches. A p-conductive wall between an n-conductive source zone and an n-conductive drain zone, together with the source zone and drain zone, extend to an n-conductive substrate. The source zone and the drain zone
6534830 Low impedance VDMOS semiconductor component March 18, 2003
A low impedance VDMOS semiconductor component having a planar gate structure is described. The VDMOS semiconductor component contains a semiconductor body of a first conductivity type having two main surfaces, including a first main surface and a second main surface disposed substant
6459142 Power MOSFET October 1, 2002
The power MOSFET has a semiconductor layer formed on a highly doped semiconductor substrate of a first conductivity type. The semiconductor layer is itself of the other conductivity type and a highly doped source zone of the other conductivity type and a highly doped drain zone of the
6445038 Silicon on insulator high-voltage switch September 3, 2002
An SOI high-voltage switch with an FET structure, in which a drift zone of one conductivity type is provided between a gate electrode and a drain electrode in the drain region. Pillar-like trenches in the form of a grid are incorporated in the drift zone and are filled with semiconductor
6411484 VLSI circuit with temperature monitoring June 25, 2002
The VLSI circuit has one or more integrated semiconductor chips disposed in a housing and connected via connecting lines to contact terminals that are accessible from outside the housing. A temperature sensor chip is in thermal contact with the semiconductor chip in the housing. Connecti
6399435 Method for producing a DRAM cell with a trench capacitor June 4, 2002
The present invention provides a method for fabricating a DRAM cell having a trench capacitor. In order to simplify the fabrication method for a DRAM cell, to ensure a high yield and to achieve a high packing density of the DRAM cells, the invention proposes that the storage capacitor (4
6384456 Field-effect transistor having a high packing density and method for fabricating it May 7, 2002
A field-effect transistor has a semiconductor body with a main area, in which at least one source zone and one drain zone are introduced and which is provided with a gate electrode isolated from a channel region disposed between a source zone and a drain zone by an insulator layer. In th
6376890 High-voltage edge termination for planar structures April 23, 2002
A high-voltage edge termination structure for planar structures. The planar structures have a semiconductor body of a first conductivity type whose edge area is provided with at least one field plate isolated from the semiconductor body by an insulator layer. The edge area of the sem
6365919 Silicon carbide junction field effect transistor April 2, 2002
A lateral silicon carbide junction field effect transistor has p-conductive and n-conductive silicon carbide layers. The layers are provided in pairs in lateral direction in a silicon carbide body. Trenches for a source, a drain and a gate extend from a principal surface of the silicon c
6326656 Lateral high-voltage transistor December 4, 2001
A lateral high-voltage transistor has a semiconductor body made of a lightly doped semiconductor substrate of a first conductivity type and an epitaxial layer of a second conductivity type. The epitaxial layer is provided on the semiconductor substrate. The lateral high-voltage trans
6323531 Two-chip power IC having an improved short-circuit response November 27, 2001
The invention relates to a two-chip power IC, in which a sensor chip having a sensor is mounted on a switch chip having a switch. The sensor is electrically connected to the switch in order to turn the switch off when a temperature detected by the sensor exceeds a threshold value which c
6313506 Silicon-on-insulator field effect transistor November 6, 2001
The SOI-FET has source and drain zones of one conductivity type arranged on an insulator. A semiconductor zone of another conductivity type ("body") is arranged between the source and drain zones. A trench is introduced into the semiconductor zone of the other conductivity type. The tren
6313485 Gate-controlled thyristor November 6, 2001
A gate-controlled thyristor in which an IGBT in a first cell and a thyristor in a main cell are connected together in ouch a way that the first cell and the main cell form a lateral FET with a channel of a first conducting type. In an emitter zone of the thyristor, there is a layer e
6310331 Circuit configuration for driving an ignition coil October 30, 2001
A circuit configuration for driving an ignition coil includes a first semiconductor switch having a load path connected in series with a primary winding of the ignition coil, and having a control electrode, which is driven in accordance with a first drive signal. The circuit configuratio
6284620 Method for fabricating an SOI wafer for low-impedance high-voltage semiconductor components September 4, 2001
A method for fabricating an SOI wafer for low-impedance high-voltage semiconductor components includes producing a semiconductor wafer from a semiconductor substrate, on one outer surface of which a plurality of epitaxial layers are provided. Trenches and a marking groove, which reac
6284604 Method for producing a field-effect-controllable, vertical semiconductor component September 4, 2001
A field-effect-controllable, vertical semiconductor component, and a method for producing the semiconductor component include a semiconductor body having at least one drain zone of a first conduction type, at least one source zone of the first conduction type, at least one gate electrode
6281119 Method for making contact with a semiconductor layer and semiconductor structure having a plural August 28, 2001
A method for making contact with a covered semiconductor layer through a contact hole, includes producing a contact hole in an insulator layer for making contact with at least one covered semiconductor layer. A heavily doped polysilicon layer is produced on the surface of the insulator l
6274904 Edge structure and drift region for a semiconductor component and production method August 14, 2001
The invention relates to an edge structure and a drift region for a semiconductor component. A semiconductor body of the one conductivity type has an edge area with a plurality of regions of the other conductivity type embedded in at least two mutually different planes. Underneath an
6271562 Semiconductor component which can be controlled by a field effect August 7, 2001
A power semiconductor component that can be controlled by a field effect has a multiplicity of parallel-connected individual components disposed in cells, the cells are disposed tightly packed on a relatively small space in a cell array. Parallel-connected source zones of the cells have
6225643 SOI cell and method for producing it May 1, 2001
An SOI cell includes a semiconductor body having at least one insulator layer. A polycrystalline zone doped with a dopant of a first conductivity type is grown on the insulator layer. The polycrystalline zone is adjoined outside the region of the insulator layer by a semiconductor region
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