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Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Thei; Kong-Beng
Address:
Pao-Shan Village, TW
No. of patents:
2
Patents:












Patent Number Title Of Patent Date Issued
8153498 Downsize polysilicon height for polysilicon resistor integration of replacement gate process April 10, 2012
A semiconductor device and method for fabricating a semiconductor device protecting a resistive structure in gate replacement processing is disclosed. The method comprises providing a semiconductor substrate; forming at least one gate structure including a dummy gate over the semicon
7981801 Chemical mechanical polishing (CMP) method for gate last process July 19, 2011
A method for fabricating a semiconductor device is provided which includes providing a semiconductor substrate, forming a plurality of transistors, each transistor having a dummy gate structure, forming a contact etch stop layer (CESL) over the substrate including the dummy gate stru










 
 
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