| Patent Number |
Title Of Patent |
Date Issued |
| 7615786 |
Thin film transistor incorporating an integrated capacitor and pixel region |
November 10, 2009 |
| A thin film transistor of the present invention has an active layer including at least source, drain and channel regions formed on an insulating surface. A high resistivity region is formed between the channel region and each of the source and drain regions. A film capable of trappin |
| 7557377 |
Semiconductor device having thin film transistor |
July 7, 2009 |
| Regions 106 which can be regarded as being monocrystalline are formed locally by irradiating with laser light, and at least the channel-forming region 112 is constructed using these regions. With thin-film transistors which have such a construction it is possible to obtain characteristic |
| 7553716 |
Method for manufacturing a semiconductor thin film |
June 30, 2009 |
| A little amount of nickel is introduced into an amorphous silicon film formed on a glass substrate to crystallize the amorphous silicon film by heating. In this situation, nickel elements remain in a crystallized silicon film. An amorphous silicon film is formed on the surface of the |
| 7547915 |
Semiconductor device having SiOxNy film |
June 16, 2009 |
| In fabricating a thin film transistor, an active layer comprising a silicon semiconductor is formed on a substrate having an insulating surface. Hydrogen is introduced into The active layer. A thin film comprising SiO.sub.xN.sub.y is formed to cover the active layer and then a gate i |
| 7452794 |
Manufacturing method of a thin film semiconductor device |
November 18, 2008 |
| A substrate processing apparatus includes a plurality of evacuable treatment chambers connected to one another via an evacuable common chamber, and the common chamber is provided with means for transporting a substrate between each treatment chamber. More specifically, a substrate pr |
| 7427780 |
Semiconductor device and method of fabricating same |
September 23, 2008 |
| There is disclosed a method of fabricating a thin-film transistor having excellent characteristics. Nickel element is held in contact with selected regions of an amorphous silicon film. Then, thermal processing is performed to crystallize the amorphous film. Subsequently, thermal pro |
| 7422630 |
Fabrication method of semiconductor device |
September 9, 2008 |
| Concentration of metal element which promotes crystallization of silicon and which exists within a crystal silicon film obtained by utilizing the metal element is reduced. A first heat treatment for crystallization is implemented after introducing nickel to an amorphous silicon film 103. |
| 7301209 |
Semiconductor device |
November 27, 2007 |
| A thin film transistor of the present invention has an active layer including at least source, drain and channel regions formed on an insulating surface. A high resistivity region is formed between the channel region and each of the source and drain regions. A film capable of trappin |
| 7271082 |
Method of manufacturing a semiconductor device |
September 18, 2007 |
| A substrate processing apparatus includes a plurality of evacuable treatment chambers connected to one another via an evacuable common chamber, and the common chamber is provided with means for transporting a substrate between each treatment chamber. More specifically, a substrate pr |
| 7229861 |
Method for producing semiconductor device |
June 12, 2007 |
| In producing a thin film transistor, after an amorphous silicon film is formed on a substrate, a nickel silicide layer is formed by spin coating with a solution (nickel acetate solution) containing nickel as the metal element which accelerates (promotes) the crystallization of silicon an |
| 7173282 |
Semiconductor device having a crystalline semiconductor film |
February 6, 2007 |
| Nickel is selectively held in contact with a particular region of an amorphous silicon film. Crystal growth parallel with a substrate is effected by performing a heat treatment. A thermal oxidation film is formed by performing a heat treatment in an oxidizing atmosphere containing a |
| 7170138 |
Semiconductor device |
January 30, 2007 |
| A thin film transistor of the present invention has an active layer including at least source, drain and channel regions formed on an insulating surface. A high resistivity region is formed between the channel region and each of the source and drain regions. A film capable of trappin |
| 7078727 |
Semiconductor device and its manufacturing method |
July 18, 2006 |
| Nickel is selectively held in contact with a particular region of an amorphous silicon film. Crystal growth parallel with a substrate is effected by performing a heat treatment. A thermal oxidation film is formed on the silicon film by performing a heat treatment in an oxidizing atmo |
| 7078246 |
Optical processing apparatus and optical processing method |
July 18, 2006 |
| In an annealing process in which laser light is irradiated to a semiconductor thin film, a refractive index of the semiconductor thin film after laser light irradiation is measured and conditions for the next laser light irradiation are adjusted based on the measured refractive index |
| 6967696 |
Reflective liquid crystal display panel and device using same |
November 22, 2005 |
| There is disclosed an active matrix reflective liquid crystal display panel on which an active matrix circuit is integrated with peripheral driver circuits. Metal lines in the peripheral driver circuits are formed simultaneously with pixel electrodes. Thus, neither the process sequence |
| 6847097 |
Glass substrate assembly, semiconductor device and method of heat-treating glass substrate |
January 25, 2005 |
| Improved method of heat-treating a glass substrate, especially where the substrate is thermally treated (such as formation of films, growth of films, and oxidation) around or above its strain point If devices generating heat are formed on the substrate, it dissipates the heat well. A |
| 6835607 |
Semiconductor device and a method for manufacturing the same |
December 28, 2004 |
| A thin film transistor of the present invention has an active layer including at least source, drain and channel regions formed on an insulating surface. A high resistivity region is formed between the channel region and each of the source and drain regions. A film capable of trappin |
| 6753213 |
Laser processing method |
June 22, 2004 |
| A laser processing apparatus provides a heating chamber, a chamber for laser light irradiation and a robot arm, wherein a temperature of a substrate on which a silicon film to be irradiated with laser light is formed is heated to 450 to 750.degree. C. in the heating chamber followed |
