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Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Tefft; Edward G.
Address:
Auburn, NY
No. of patents:
6
Patents:












Patent Number Title Of Patent Date Issued
4325182 Fast isolation diffusion April 20, 1982
A method for forming low stress recesses in bodies of semiconductor material involves damaging the body either thermally or mechanically in the area where the recess is to be formed followed by etching in either a plasma or chemical medium to remove the damaged body portion leaving a
4148672 Glass passivated gold diffused rectifier pellet and method for making April 10, 1979
Disclosed is a rectifier pellet and a method for the fabrication thereof. A layer of oxide is grown on a semiconductor wafer that has been diffused to form a plurality of rectifier pellets, and openings are etched in the oxide at locations corresponding to each pellet. Gold is diffused t
4134778 Selective irradiation of thyristors January 16, 1979
The dv/dt characteristics of a bidirectional thyristor are improved by irradiating selected portions of the device with high energy crystal lattice-damaging particles. In an exemplary embodiment, the commutating dv/dt of a triac is enhanced by the masked, selective irradiation of the
4061510 Producing glass passivated gold diffused rectifier pellets December 6, 1977
Disclosed is a rectifier pellet and a method for the fabrication thereof. A layer of oxide is grown on a semiconductor wafer that has been diffused to form a plurality of rectifier pellets, and openings are etched in the oxide at locations corresponding to each pellet. Gold is diffused t
3943013 Triac with gold diffused boundary March 9, 1976
Disclosed is a bidirectional triode thyristor pellet that comprises two current conductive regions and a gate region. Gold is diffused into the boundaries between the several regions to inhibit carrier migration thereacross and thus reduce turnoff time. Also disclosed is a method of
3941625 Glass passivated gold diffused SCR pellet and method for making March 2, 1976
Disclosed is an SCR pellet and a method for the fabrication thereof. A layer of oxide is grown on a semiconductor wafer that has been diffused to form a plurality of SCR pellets and openings are etched in the oxide at locations corresponding to each pellet. Gold is diffused through the










 
 
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