| Patent Number |
Title Of Patent |
Date Issued |
| RE38682 |
Grating coupled vertical cavity optoelectronic devices |
January 4, 2005 |
| A edge emitting waveguide laser is obtained that derives its optical power from a vertical cavity laser structure. The vertical cavity laser with top and bottom Distributed Bragg Reflectors produces stimulated emission by resonance in the vertical direction but the optical power so gener |
| 7595516 |
Optoelectronic circuit employing a heterojunction thyristor device to convert a digital optical |
September 29, 2009 |
| An optoelectronic circuit includes a resonant cavity formed on a substrate and into which is injected an input digital optical signal that encodes bits of information (each bit representing an OFF logic level or an ON logic level). A heterojunction thyristor device, formed in the resonan |
| 7556976 |
Method of fabricating semiconductor devices employing at least one modulation doped quantum well |
July 7, 2009 |
| A method of fabricating a semiconductor device includes the steps of forming (or providing) a series of layers formed on a substrate, the layers including a first plurality of layers including an n-type ohmic contact layer, a p-type modulation doped quantum well structure, an n-type |
| 7432539 |
Imaging method utilizing thyristor-based pixel elements |
October 7, 2008 |
| An improved imaging array (and corresponding method of operation) includes a plurality of heterojunction thyristor-based pixel elements disposed within resonant cavities formed on a substrate. Each thyristor-based pixel element includes complementary n-type and p-type modulation doped |
| 7409120 |
Integrated circuit for programmable optical delay |
August 5, 2008 |
| Interference caused by the propagation of a transmit signal transmitted from a transmit antenna to a receive antenna is effectively cancelled by an improved signal cancellation system. The system includes an interference cancellation signal generator that generates a time-delayed and |
| 7385230 |
Modulation doped thyristor and complementary transistor combination for a monolithic optoelectro |
June 10, 2008 |
| A thyristor and family of high speed transistors and optoelectronic devices are obtained on a monolithic substrate (149) with an epitaxial layer structure comprised of two modulation doped transistor structures inverted with respect to each other. The transistor structures are obtain |
| 7333733 |
Optoelectronic clock generator producing high frequency optoelectronic pulse trains with variabl |
February 19, 2008 |
| An optoelectronic pulse generator is provided that includes a thyristor detector/emitter device having an input port and an output port. The thyristor detector/emitter device is adapted to detect an input optical pulse supplied to the input port and to produce an output optical pulse |
| 7332752 |
Optoelectronic circuit employing a heterojunction thyristor device to convert a digital optical |
February 19, 2008 |
| An optoelectronic circuit includes a resonant cavity formed on a substrate and into which is injected an input digital optical signal that encodes bits of information (each bit representing an OFF logic level or an ON logic level). A heterojunction thyristor device, formed in the resonan |
| 7262429 |
Thz detection employing modulation doped quantum well device structures |
August 28, 2007 |
| An improved THz detection mechanism includes a heterojunction thyristor structure logically formed by an n-type quantum-well-base bipolar transistor and p-type quantum-wellbase bipolar transistor arranged vertically to share a common collector region. Antenna elements, which are adap |
| 7247892 |
Imaging array utilizing thyristor-based pixel elements |
July 24, 2007 |
| An improved imaging array (and corresponding method of operation) includes a plurality of heterojunction thyristor-based pixel elements disposed within resonant cavities formed on a substrate. Each thyristor-based pixel element includes complementary n-type and p-type modulation doped |
| 7176046 |
Apparatus and a method of fabricating inversion channel devices with precision gate doping for a |
February 13, 2007 |
| A family of high speed transistors and optoelectronic devices are obtained on a monolithic substrate by adding two sheets of planar doping together with a wideband cladding layer to the top of a pseudomorphic high electron mobility transistor (PHEMT) structure. The two sheets are of the |
| 7173293 |
Semiconductor devices employing at least one modulation doped quantum well structure and one or |
February 6, 2007 |
| A semiconductor device includes a series of layers formed on a substrate, the layers including a first plurality of layers including an n-type ohmic contact layer, a p-type modulation doped quantum well structure, an n-type modulation doped quantum well structure, and a fourth plurality |
| 7064697 |
Photonic sigma delta analog-to-digital conversation employing dual heterojunction thyristors |
June 20, 2006 |
| Interference caused by the propagation of a transmit signal transmitted from a transmit antenna to a receive antenna is effectively cancelled by an improved signal cancellation system. The system includes an interference cancellation signal generator that generates a time-delayed and |
| 7015120 |
Method of fabricating semiconductor devices employing at least one modulation doped quantum well |
March 21, 2006 |
| A method of fabricating a semiconductor device includes the steps of forming (or providing) a series of layers formed on a substrate, the layers including a first plurality of layers including an n-type ohmic contact layer, a p-type modulation doped quantum well structure, an n-type |
| 7012274 |
Modulation doped thyristor and complementary transistors combination for a monolithic optoelectr |
March 14, 2006 |
| A thyristor and family of high speed transistors and optoelectronic devices are obtained on a monolithic substrate (149) with an epitaxial layer structure comprised of two modulation doped transistor structures inverted with respect to each other. The transistor structures are obtain |
| 6995407 |
Photonic digital-to-analog converter employing a plurality of heterojunction thyristor devices |
February 7, 2006 |
| A photonic digital-to-analog converter employing a plurality of heterojunction thyristor devices that are configured to convert a digital word encoded by a parallel digital optical signal (e.g., a plurality of synchronous optical bits) to an output analog electrical signal whose magn |
| 6977954 |
Semiconductor laser array device employing modulation doped quantum well structures |
December 20, 2005 |
| An optoelectronic integrated circuit comprises a substrate, a multilayer structure formed on the substrate, and an array of thyristor devices and corresponding resonant cavities formed in the multilayer structure. The resonant cavities, which are adapted to process different wavelengths |
| 6974969 |
P-type quantum-well-base bipolar transistor device employing interdigitated base and emitter for |
December 13, 2005 |
| A high performance bipolar transistor device is realized from a series of layers formed on a substrate, the series of layers including a first set of one or more layers each comprising n-type dopant material, a second set of layers forming a p-type modulation doped quantum well structure |
| 6954473 |
Optoelectronic device employing at least one semiconductor heterojunction thyristor for producin |
October 11, 2005 |
| An optoelectronic integrated circuit includes a resonant cavity formed on a substrate. A heterojunction thyristor device is formed in the resonant cavity and operates to detect an input optical pulse (or input electrical pulse) and produce an output optical pulse via laser emission in re |
| 6936839 |
Monolithic integrated circuit including a waveguide and quantum well inversion channel devices a |
August 30, 2005 |
| A family of optical waveguide structures and high speed optoelectronic/transistor devices are obtained from a multilayer structure that includes a modulation doped quantum well structure formed over a DBR mirror. The optical waveguide structure is realized by implanting n-type ions t |
| 6873273 |
Photonic serial digital-to-analog converter employing a heterojunction thyristor device |
March 29, 2005 |
| A serial photonic digital-to-analog converter employs a heterojunction thyristor device configured for optically-controlled sampling/switching to convert a digital word encoded by a serial digital optical data signal (e.g., serial optical bit stream) into a corresponding analog electrica |
| 6853014 |
Optoelectronic circuit employing a heterojunction thyristor device that performs high speed samp |
February 8, 2005 |
| An optoelectronic circuit employing a heterojunction thyristor device that is configured as an optically-controlled (or electrically-controlled) sampling/switching device. First and second channel regions are disposed between the anode terminal and the cathode terminal of the device, and |
| 6849866 |
High performance optoelectronic and electronic inversion channel quantum well devices suitable f |
February 1, 2005 |
| A family of high speed transistors and optoelectronic devices are obtained on a monolithic substrate by adding two sheets of planar doping together with a wideband cladding layer to the top of a pseudomorphic high electron mobility transistor (PHEMT) structure. The two sheets are of the |
| 6841806 |
Heterojunction thyristor-based amplifier |
January 11, 2005 |
| An integrated circuit includes a heterojunction thyristor device having an anode terminal, a cathode terminal, a first injector terminal operably coupled to a first quantum well channel disposed between the anode terminal and the cathode terminal, and a second injector terminal operably |
| 6841795 |
Semiconductor devices employing at least one modulation doped quantum well structure and one or |
January 11, 2005 |
| A semiconductor device includes a series of layers formed on a substrate, the layers including a first plurality of layers including an n-type ohmic contact layer, a p-type modulation doped quantum well structure, an n-type modulation doped quantum well structure, and a fourth plurality |
