| Patent Number |
Title Of Patent |
Date Issued |
| 5382787 |
Photoconductive material |
January 17, 1995 |
| The invention provides a temperature switch material capable of detecting a very low temperature not higher than 150 K. It also provides a light switch material for detecting light in the ultraviolet region. It further provides a switch material suited for use as a substrate for thin oxi |
| 5250120 |
Photovoltaic device |
October 5, 1993 |
| This invention relates to a photovoltaic device, such as a solar cell or a photosensor, which comprises an amorphous silicon semiconductor photosensitive layer and, as disposed on respective sides thereof, a transparent electrode and a rear electrode. The rear electrode is a multi-la |
| 5066861 |
X ray detecting device |
November 19, 1991 |
| In an X ray detecting device comprising XL converting unit for converting the X rays into visible light corresponding to the intensity of the X rays and a LE converting unit for converting the visible light into an electrical signal corresponding to the intensity of the visible light, th |
| 5039852 |
Semiconductor image sensor |
August 13, 1991 |
| In the semiconductor image sensor according to the invention in which the photoconductivity of that region of the active layer producing carriers upon exposure to light which is on the light-transmitting electrode side is lower than that of the remaining region, crosstalk can be inhibite |
| 4965225 |
Method of stabilizing amorphous semiconductors |
October 23, 1990 |
| An amorphous semiconductor film is prepared by the usual procedure and, then, established by exposing it to sufficient light intermittently to age the same. The degradation of the electrical characteristics of the semiconductor film on prolonged exposure to light is minimized by the |
| 4926230 |
Multiple junction solar power generation cells |
May 15, 1990 |
| A photovoltaic device of amorphous or microcrystalline semiconductor having multijunction wherein one or more layer including high concentration impurities is interposed between p-type conductive layer and n-type conductive layer. A tunnel junction is formed by the interposed layer to |
