| Patent Number |
Title Of Patent |
Date Issued |
| 7989336 |
Methods of forming a plurality of conductive lines in the fabrication of integrated circuitry, m |
August 2, 2011 |
| A method of forming a pair of conductive lines in the fabrication of integrated circuitry includes forming a trench into a damascene material received over a substrate. Conductive material is deposited over the damascene material and to within the trench to overfill the trench. The c |
| 6759324 |
Method of forming a low resistance contact to underlying aluminum interconnect by depositing tit |
July 6, 2004 |
| Structures and processes are disclosed for reducing electrical contact resistance between two metal layers. Specifically, a resistive aluminum oxide layer forms spontaneously on metal lines including aluminum, within a V-shaped contact via which is opened in an insulating layer through a |
| 6437369 |
Method of forming dynamic random access memory circuitry and dynamic random access memory |
August 20, 2002 |
| A semiconductor processing method of forming dynamic random access memory circuitry includes, a) providing an electrically conductive capacitor cell plate substrate; b) providing an electrically insulative layer over the cell plate; c) providing a layer of semiconductive material on the |
| 6274486 |
Metal contact and process |
August 14, 2001 |
| Structures and processes are disclosed for reducing electrical contact resistance between two metal layers. Specifically, a resistive aluminum oxide layer forms spontaneously on metal lines including aluminum, within a V-shaped contact via which is opened in an insulating layer through a |
| 6268292 |
Methods for use in formation of titanium nitride interconnects |
July 31, 2001 |
| A method for use in the fabrication of semiconductor devices includes forming a titanium nitride film and depositing a silicon hard mask over the titanium nitride film. The silicon hard mask is used to pattern a titanium nitride interconnect from the titanium nitride film and the sil |
| 6162721 |
Semiconductor processing methods |
December 19, 2000 |
| A semiconductor processing method includes: a) providing a substrate having a base region to which electrical connection is to be made; b) providing a first layer of a conductive first material; c) providing an etch stop layer over the first layer; d) etching a contact opening through th |
| 6160296 |
Titanium nitride interconnects |
December 12, 2000 |
| A method for use in the fabrication of semiconductor devices includes forming a titanium nitride film and depositing a silicon hard mask over the titanium nitride film. The silicon hard mask is used to pattern a titanium nitride interconnect from the titanium nitride film and the sil |
| 5977578 |
Method of forming dynamic random access memory circuitry and dynamic random access memory |
November 2, 1999 |
| A semiconductor processing method of forming dynamic random access memory circuitry includes, a) providing an electrically conductive capacitor cell plate substrate; b) providing an electrical insulative layer over the cell plate; c) providing a layer of semiconductive material on the in |
| 5945350 |
Methods for use in formation of titanium nitride interconnects and interconnects formed using sa |
August 31, 1999 |
| A method for use in the fabrication of semiconductor devices includes forming a titanium nitride film and depositing a silicon hard mask over the titanium nitride film. The silicon hard mask is used to pattern a titanium nitride interconnect from the titanium nitride film and the sil |
| 5838068 |
Integrated circuitry with interconnection pillar |
November 17, 1998 |
| A semiconductor processing method includes: a) providing a substrate having a base region to which electrical connection is to be made; b) providing a first layer of a conductive first material; c) providing an etch stop layer over the first layer; d) etching a contact opening through th |
| 5834805 |
Dynamic random access memory circuit array and memory cell |
November 10, 1998 |
| A semiconductor processing method of forming dynamic random access memory circuitry includes, a) providing an electrically conductive capacitor cell plate substrate; b) providing an electrically insulative layer over the cell plate; c) providing a layer of semiconductive material on the |
| 5807776 |
Method of forming dynamic random access memory circuitry and dynamic random access memory |
September 15, 1998 |
| A semiconductor processing method of forming dynamic random access memory circuitry includes, a) providing an electrically conductive capacitor cell plate substrate; b) providing an electrically insulative layer over the cell plate; c) providing a layer of semiconductive material on the |
| 5506172 |
Semiconductor processing method of forming an electrical interconnection between an outer layer |
April 9, 1996 |
| A semiconductor processing method includes: a) providing a substrate having a base region to which electrical connection is to be made; b) providing a first layer of a conductive first material; c) providing an etch stop layer over the first layer; d) etching a contact opening through th |
