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Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Tanaka; Yasuo
Address:
Koganei, JP
No. of patents:
7
Patents:












Patent Number Title Of Patent Date Issued
5889573 Thin film transistor substrate, manufacturing method thereof, liquid crystal display panel and l March 30, 1999
The present invention concerns an active-matrix addressed TFT substrate using a thin film transistor, a manufacturing method and an anodic oxidation method thereof, a liquid crystal display panel using the TFT substrate and a liquid crystal display equipment using the liquid crystal
5719408 Thin film transistor substrate, manufacturing method thereof, liquid crystal display panel and l February 17, 1998
In the present invention, Cr or Ta is used for gate terminals, aluminum or a metal mainly composed of aluminum is used for gate bus-lines extended therefrom, gate electrodes and thin film capacitances (additional capacitance, storage capacitance) and an anodic oxidized film composed of
5672523 Thin film transistor substrate, manufacturing method thereof, liquid crystal display panel and l September 30, 1997
The present invention concerns an active-matrix addressed TFT substrate using a thin film transistor, a manufacturing method and an anodic oxidation method thereof, a liquid crystal display panel using the TFT substrate and a liquid crystal display equipment using the liquid crystal
5359206 Thin film transistor substrate, liquid crystal display panel and liquid crystal display equipmen October 25, 1994
Disclosed is an active-matrix addressed TFT substrate using a thin film transistor, a manufacturing method and an anodic oxidation method thereof, a liquid crystal display panel using the TFT substrate and a liquid crystal display equipment using the liquid crystal display panel. In the
5200634 Thin film phototransistor and photosensor array using the same April 6, 1993
A thin film phototransistor is provided having a field effect transistor structure where at least one end of the gate electrode is not overlapped with an electrode neighboring the end. Such a thin film phototransistor has: (1) a function as a photosensor and a switching function; (2) a h
5032531 Method of manufacturing active matrix panel July 16, 1991
In a first manufacturing step of an active matrix liquid-crystal panel, a transparent conductor film and a metal film are sequentially accumulated on a substrate in this order so as to form a two-layer film. The two-layer film including the transparent conductor film and the metal film i
4990981 Thin film transistor and a liquid crystal display device using same February 5, 1991
A thin film transistor is disclosed, which comprises a gate electrode, a gate insulating layer, a semiconductor layer, a source electrode, and a drain electrode, which are disposed on a predetermined substrate, and which is so constructed that the semiconductor layer doesn't exist in any










 
 
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