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Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Tanaka; Masayuki
Address:
Yokohama, JP
No. of patents:
39
Patents:












Patent Number Title Of Patent Date Issued
8278697 Semiconductor device and method for manufacturing the same October 2, 2012
A semiconductor device includes a semiconductor substrate, a first insulating film formed on the semiconductor substrate, a charge storage layer formed on the first insulating film, a second insulating film formed on the charge storage layer, and a control electrode formed on the sec
8198159 Semiconductor memory device and method of manufacturing the same June 12, 2012
A semiconductor memory device includes a semiconductor substrate, an isolation insulation film filled in a plurality of trenches formed in the semiconductor substrate to define a plurality of element formation regions, a floating gate of polysilicon provided on each of the element fo
8110865 Semiconductor device and method for manufacturing the same February 7, 2012
A semiconductor device includes a semiconductor substrate, a first insulating film formed on the semiconductor substrate, a charge storage layer formed on the first insulating film, a second insulating film formed on the charge storage layer, and a control electrode formed on the sec
8022467 Nonvolatile semiconductor memory device and method of fabricating the same September 20, 2011
A nonvolatile semiconductor memory device includes a first insulating layer, charge storage layers, element isolation insulating films, and a second insulating layer formed on the charge storage layers and the element isolation insulating films and including a stacked structure of a
8008152 Method of manufacturing semiconductor device August 30, 2011
A method of manufacturing a semiconductor device comprising a first insulating film formed on a semiconductor substrate, a charge storage layer formed on the first insulating film, a second insulating film formed on the charge storage layer, and a control electrode formed on the seco
7999304 Semiconductor device August 16, 2011
A semiconductor device includes a semiconductor substrate, and nonvolatile memory cells, each of the cells including a channel region having a channel length and a channel width, a tunnel insulating film, a floating gate electrode, a control gate electrode, an inter-electrode insulat
7947610 Semiconductor device having a gate insulating film structure including an insulating film contai May 24, 2011
Claimed and disclosed is a semiconductor device including a transistor having a gate insulating film structure containing nitrogen or fluorine in a compound, such as metal silicate, containing metal, silicon and oxygen, a gate insulating film structure having a laminated structure of
7927949 Semiconductor memory device and method of manufacturing the same April 19, 2011
A semiconductor memory device manufacturing method includes forming a floating gate electrode above a semiconductor substrate, forming an interelectrode insulating film above the floating gate electrode, forming a first radical nitride film on a surface of the interelectrode insulati
7833856 Semiconductor device and method of manufacturing same November 16, 2010
According to an aspect of the invention, there is provided a semiconductor device comprising a semiconductor substrate, a first insulating layer formed on the semiconductor substrate, a first conductive layer formed as a floating gate on the first insulating layer, a second insulating la
7772636 Nonvolatile semiconductor memory device with multilayer interelectrode dielectric film August 10, 2010
A nonvolatile semiconductor memory device includes a first dielectric layer formed on the major surface of a semiconductor substrate, a floating gate electrode layer formed on the first dielectric layer, a second dielectric layer obtained by sequentially forming, on the floating gate
7723772 Semiconductor memory device and method of manufacturing the same May 25, 2010
A semiconductor memory device manufacturing method includes forming a floating gate electrode above a semiconductor substrate, forming an interelectrode insulating film above the floating gate electrode, forming a first radical nitride film on a surface of the interelectrode insulati
7714373 Semiconductor device and method of manufacturing the same May 11, 2010
There is disclosed a semiconductor device including a plurality of memory cell transistors, each memory cell transistor including a floating gate electrode isolated from each other via an isolation insulating film every memory cell transistor, an inter-electrode insulating film comprisin
7682899 Method of manufacturing semiconductor device March 23, 2010
A method of manufacturing a semiconductor device comprising a first insulating film formed on a semiconductor substrate, a charge storage layer formed on the first insulating film, a second insulating film formed on the charge storage layer, and a control electrode formed on the seco
7635891 Semiconductor device December 22, 2009
A semiconductor device includes a semiconductor substrate, and a memory cell array provided on the semiconductor substrate and including a plurality of memory cells arranged on the semiconductor substrate, each of the plurality of the memory cells including a first insulating film pr
7635890 Semiconductor device December 22, 2009
A semiconductor device includes a semiconductor substrate, a plurality of nonvolatile memory cells provided on the semiconductor substrate, each of the plurality of nonvolatile memory cells comprising a first insulating film provided on the semiconductor substrate, a charge storage layer
7629232 Semiconductor storage device and manufacturing method thereof December 8, 2009
A non-volatile semiconductor storage device having a high-dielectric-constant insulator and a manufacturing method thereof suitable for miniaturization are disclosed. According to one aspect of the present invention, it is provided a semiconductor storage device comprising a semicond
7612404 Semiconductor device November 3, 2009
A semiconductor device includes semiconductor substrate, isolation insulating film, nonvolatile memory cells, each of the cells including tunnel insulating film, FG electrode, CG electrode, interelectrode insulating film between the CG and FG electrodes and including a first insulati
7592666 Semiconductor memory September 22, 2009
A semiconductor memory having an electrically writable/erasable memory cell includes a first gate insulating layer made from a compound containing silicon and oxygen; a first charge-storage layer being in contact with the first gate insulating layer made from a silicon nitride film,
7544593 Semiconductor device having a gate insulating film structure including an insulating film contai June 9, 2009
Claimed and disclosed is a semiconductor device including a transistor having a gate insulating film structure containing nitrogen or fluorine in a compound, such as metal silicate, containing metal, silicon and oxygen, a gate insulating film structure having a laminated structure of
7521263 Method of forming an insulating film, method of manufacturing a semiconductor device, and semico April 21, 2009
A method of forming an insulating film includes forming a base film comprising a material whose surface is oxidized by being exposed to an oxidant. A source gas containing a metal material and a first oxidant having a first oxidation force are alternately supplied to form a first ins
7372113 Semiconductor device and method of manufacturing the same May 13, 2008
Disclosed is a semiconductor device comprising a semiconductor substrate, a gate electrode, a first insulating film formed between the semiconductor substrate and the gate electrode, and a second insulating film formed along a top surface or a side surface of the gate electrode and i
7368780 Semiconductor memory device and method of manufacturing the same May 6, 2008
A semiconductor memory device includes a semiconductor substrate, an isolation insulation film filled in a plurality of trenches formed in the semiconductor substrate to define a plurality of element formation regions, a floating gate of polysilicon provided on each of the element fo
7306994 Semiconductor device having a gate insulating film structure including an insulating film contai December 11, 2007
Claimed and disclosed is a semiconductor device including a transistor having a gate insulating film structure containing nitrogen or fluorine in a compound, such as metal silicate, containing metal, silicon and oxygen, a gate insulating film structure having a laminated structure of
7294878 Semiconductor memory device and method of manufacturing the same November 13, 2007
A semiconductor memory device includes a semiconductor substrate, an isolation insulation film filled in a plurality of trenches formed in the semiconductor substrate to define a plurality of element formation regions, a floating gate provided on each of the element formation regions
7148158 Semiconductor device and method for manufacturing the same December 12, 2006
A semiconductor device includes a semiconductor device comprising a semiconductor substrate, source/drain regions formed in the semiconductor substrate, a gate insulation film formed on the semiconductor substrate, a gate electrode formed on the gate insulation film between the sourc
7129132 Semiconductor device and method of manufacturing the same October 31, 2006
Hexachlorodisilane (Si.sub.2Cl.sub.6) is used as a Si raw material for forming a silicon nitride film that can be widely different in the etching rate from a silicon oxide film. The silicon nitride film is formed by an LPCVD method.
7098115 Semiconductor device and method of manufacturing the same August 29, 2006
Hexachlorodisilane (Si.sub.2Cl.sub.6) is used as a Si raw material for forming a silicon nitride film that can be widely different in the etching rate from a silicon oxide film. The silicon nitride film is formed by an LPCVD method.
7060555 Semiconductor device and method of manufacturing the same June 13, 2006
Hexachlorodisilane (Si.sub.2Cl.sub.6) is used as a Si raw material for forming a silicon nitride film that can be widely different in the etching rate from a silicon oxide film. The silicon nitride film is formed by an LPCVD method.
7041584 Method of manufacturing semiconductor device and the semiconductor device May 9, 2006
An aspect of the present invention provides a method of manufacturing a semiconductor device, including, forming an insulating film on a silicide layer formed at the surface of a silicon semiconductor substrate, etching the insulating film to form a contact hole in which the silicide lay
6927139 Nonvolatile semiconductor memory and manufacturing method for the same August 9, 2005
A semiconductor memory encompasses a memory cell matrix, which embraces device isolation films running along the column-direction, arranged alternatively between the cell columns; first conductive layers having top surfaces lower than the device isolation films; inter-electrode diele
6903422 Semiconductor integrated circuits, fabrication method for the same and semiconductor integrated June 7, 2005
A semiconductor integrated circuit is disclosed, which includes a semiconductor substrate, a memory cell formed on the semiconductor substrate and having a first gate insulating layer of a stacked structure which includes a silicon nitride layer to become a charge storage layer, and
6790723 Semiconductor device and method of manufacturing the same September 14, 2004
Hexachlorodisilane (Si.sub.2 Cl.sub.6) is used as a Si raw material for forming a silicon nitride film that can be widely different in the etching rate from a silicon oxide film. The silicon nitride film is formed by an LPCVD method.
6784508 Semiconductor device having a gate insulating film structure including an insulating film contai August 31, 2004
Claimed and disclosed is a semiconductor device including a transistor having a gate insulating film structure containing nitrogen or fluorine in a compound, such as metal silicate, containing metal, silicon and oxygen, a gate insulating film structure having a laminated structure of an
6774462 Semiconductor device comprising dual silicon nitride layers with varying nitrogen ratio August 10, 2004
Disclosed is a semiconductor device comprising a semiconductor substrate, a gate electrode, a first insulating film formed between the semiconductor substrate and the gate electrode, and a second insulating film formed along a top surface or a side surface of the gate electrode and inclu
6772045 System for determining dry cleaning timing, method for determining dry cleaning timing, dry clea August 3, 2004
A system for determining dry cleaning timing, includes: a manufacturing apparatus configured to process materials assigned by a sequence of lots; an apparatus controller configured to control the manufacturing apparatus and obtaining operational conditions of the manufacturing apparatus
6767796 Method of manufacturing semiconductor device and the semiconductor device July 27, 2004
An aspect of the present invention provides a method of manufacturing a semiconductor device, including, forming an insulating film on a silicide layer formed at the surface of a silicon semiconductor substrate, etching the insulating film to form a contact hole in which the silicide lay
6602771 Method for fabricating semiconductor device August 5, 2003
The method for fabricating the semiconductor device comprises the step of: forming a gate insulation film 14 on a semiconductor substrate 10; forming a semiconductor layer 22 containing boron on the gate insulation film 14; forming a silicon nitride film 28 having an Si--H bond concentra
6333547 Semiconductor device and method of manufacturing the same December 25, 2001
Hexachlorodisilane (Si.sub.2 Cl.sub.6) is used as a Si raw material for forming a silicon nitride film that can be widely different in the etching rate from a silicon oxide film. The silicon nitride film is formed by an LPCVD method.
6326658 Semiconductor device including an interface layer containing chlorine December 4, 2001
A buried strap is formed after forming an SiC layer on the side surface of a trench in order to suppress the epitaxial growth of Si from the side surface (single crystal Si) of the trench to the buried strap (polycrystalline Si) without causing an increase in the contact resistance i










 
 
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