Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Tanaka; Hiroyasu
Address:
Tokyo, JP
No. of patents:
43
Patents:












Patent Number Title Of Patent Date Issued
8293601 Method of manufacturing a non-volatile semiconductor storage device October 23, 2012
A non-volatile semiconductor storage device has a plurality of memory strings with a plurality of electrically rewritable memory cells connected in series. Each of the memory strings includes: a memory columnar semiconductor extending in a direction perpendicular to a substrate; a tu
8278695 Nonvolatile semiconductor memory device and manufacturing method thereof October 2, 2012
A nonvolatile semiconductor memory device includes a substrate, and a plurality of memory strings, the memory string including a first selection transistor including a first pillar shaped semiconductor formed perpendicular to the substrate, a first gate insulating film formed around
8274108 Nonvolatile semiconductor memory device and method for manufacturing the same September 25, 2012
A nonvolatile semiconductor memory device, includes: a stacked body including a plurality of insulating films alternately stacked with a plurality of electrode films, the electrode films being divided to form a plurality of control gate electrodes aligned in a first direction; a plur
8264031 Nonvolatile semiconductor memory device and method for manufacturing same September 11, 2012
A nonvolatile semiconductor memory device includes: a semiconductor substrate; a multilayer structure; a semiconductor pillar; a third insulating film; and a fourth insulating film layer. The a multilayer structure is provided on the semiconductor substrate and including a plurality
8253187 Non-volatile semiconductor storage device and method of manufacturing the same August 28, 2012
A non-volatile semiconductor storage device 10 has a plurality of memory strings 100 with a plurality of electrically rewritable memory transistors MTr1-MTr4 connected in series. The memory string 100 includes a columnar semiconductor CLmn extending in a direction perpendicular to a
8247863 Nonvolatile semiconductor memory device and method of manufacturing the same August 21, 2012
A memory string comprises: a pair of columnar portions; a first insulating layer surrounding a side surface of the columnar portions; a charge storage layer surrounding a side surface of the first insulating layer; a second insulating layer surrounding a side surface of the charge st
8237211 Non-volatile semiconductor storage device and method of manufacturing the same August 7, 2012
A non-volatile semiconductor storage device has a memory string including a plurality of electrically rewritable memory cells connected in series. The non-volatile semiconductor storage device also has a protruding layer formed to protrude upward with respect to a substrate. The memory s
8217446 Nonvolatile semiconductor memory device and method of manufacturing the same July 10, 2012
Each of memory strings is provided with a first semiconductor layer having a pair of columnar portions extending in a perpendicular direction with respect to a substrate; a charge storage layer formed to surround a side surface of the columnar portions; and a first conductive layer f
8203884 Nonvolatile semiconductor memory device June 19, 2012
A nonvolatile semiconductor memory device, includes: a stacked structural unit including electrode films alternately stacked with inter-electrode insulating films; a first and second semiconductor pillars piercing the stacked structural unit; a connection portion semiconductor layer to
8199573 Nonvolatile semiconductor memory device June 12, 2012
A nonvolatile semiconductor memory device comprises: a bit line; a source line; a memory string having a plurality of electrically data-rewritable memory transistors connected in series; a first select transistor provided between one end of the memory string and the bit line; a second
8198667 Semiconductor memory device and method for manufacturing same June 12, 2012
A laminated body is formed by alternately laminating a plurality of dielectric films and electrode films on a silicon substrate. Next, a through hole extending in the lamination direction is formed in the laminated body. Next, a selective nitridation process is performed to selective
8193571 Stacked type nonvolatile semiconductor memory device and method of manufacturing same June 5, 2012
A stacked body is formed on a silicon substrate by stacking a plurality of insulating films and a plurality of electrode films alternately and through-holes are formed to extend in the stacking direction. Next, gaps are formed between the electrode films using etching the insulating film
8189391 Non-volatile semiconductor storage device including a control circuit May 29, 2012
A non-volatile semiconductor storage device includes: a memory string including a plurality of memory cells connected in series; a first selection transistor having one end connected to one end of the memory string; a first wiring having one end connected to the other end of the firs
8188530 Nonvolatile semiconductor memory device and method for manufacturing same May 29, 2012
A semiconductor memory device provided with a cell array section and a peripheral circuit section, the device includes: a back gate electrode; a stacked body provided on the back gate electrode; a plurality of semiconductor pillars extending in a stacking direction; connection member
8178917 Non-volatile semiconductor storage device having memory cells disposed three-dimensionally, and May 15, 2012
A non-volatile semiconductor storage device includes a first layer and a second layer. The first layer includes: a plurality of first conductive layers extending in parallel to a substrate and laminated in a direction perpendicular to the substrate; a first insulation layer formed on an
8154103 Semiconductor device April 10, 2012
A semiconductor device has a substrate, a source region formed on the surface portion of the substrate, a first insulating layer formed on the substrate, a gate electrode formed on the first insulating layer, a second insulating layer formed on the gate electrode, a body section conn
8154068 Non-volatile semiconductor storage device and method of manufacturing the same April 10, 2012
Each of memory strings comprising: a first semiconductor layer having a pair of columnar portions extending in a vertical direction to a substrate and a joining portion formed to join lower ends of the pair of columnar portions; an electric charge accumulation layer formed to surroun
8148789 Non-volatile semiconductor storage device and method of manufacturing the same April 3, 2012
A non-volatile semiconductor storage device has a plurality of memory strings with a plurality of electrically rewritable memory cells connected in series. Each of the memory strings includes: a first columnar semiconductor layer extending in a direction perpendicular to a substrate;
8148769 Nonvolatile semiconductor memory device and method of manufacturing the same April 3, 2012
A nonvolatile semiconductor memory device includes a plurality of memory strings, each of which has a plurality of electrically rewritable memory cells connected in series; and select transistors, one of which is connected to each of ends of each of the memory strings. Each of the me
8138489 Non-volatile semiconductor storage device and method of manufacturing the same March 20, 2012
A non-volatile semiconductor storage device includes a plurality of memory element groups, each of the memory element groups having a plurality of memory elements, each of the memory elements having a resistance-change element and a Schottky diode connected in series. Each of the mem
8120961 Nonvolatile semiconductor memory device February 21, 2012
A stacked body with a plurality of dielectric films and electrode films alternately stacked therein is provided. The electrode film is divided into a plurality of control gate electrodes extending in one direction. The stacked body is provided with a U-pillar penetrating through the
8089120 Semiconductor memory device January 3, 2012
A semiconductor memory device includes: a semiconductor substrate; a stacked body with a plurality of conductive layers and a plurality of dielectric layers alternately stacked, the stacked body being provided on the semiconductor substrate; a semiconductor layer provided inside a hole
8084807 Nonvolatile semiconductor memory device and method for manufacturing same December 27, 2011
A multilayer body is formed by alternately stacking electrode films serving as control gates and dielectric films in a direction orthogonal to an upper surface of a silicon substrate. Trenches extending in the word line direction are formed in the multilayer body and a memory film is
8048798 Method for manufacturing a nonvolatile semiconductor storage device where memory cells are arran November 1, 2011
A method for manufacturing a nonvolatile semiconductor storage device, including: forming a first conductive layer so that it is sandwiched in an up-down direction by first insulating layers; forming a first hole so that it penetrates the first insulating layers and the first conductive
8017993 Nonvolatile semiconductor memory device and method for manufacturing same September 13, 2011
A nonvolatile semiconductor memory device includes: a stacked body with a plurality of insulating films and electrode films alternately stacked therein, through which a through hole extending in the stacking direction is formed; a semiconductor pillar buried inside the through hole; and
8013383 Nonvolatile semiconductor storage device including a plurality of memory strings September 6, 2011
A nonvolatile semiconductor storage device has a plurality of memory strings in which a plurality of electrically rewritable memory cells are connected in series. The memory string has a columnar semiconductor layer extending in a direction perpendicular to a substrate; a conductive laye
8008710 Non-volatile semiconductor storage device August 30, 2011
A memory string has a semiconductor layer with a joining portion that is formed to join a plurality of columnar portions extending in a vertical direction with respect to a substrate and lower ends of the plurality of columnar portions. First conductive layers are formed in a laminated
7982261 Nonvolatile semiconductor memory device and method for manufacturing same July 19, 2011
A nonvolatile semiconductor memory device includes a first stacked body on a silicon substrate, and a second stacked body is provided thereon. The first stacked body includes a plurality of insulating films alternately stacked with a plurality of electrode films, and a first portion
7969789 Method for driving nonvolatile semiconductor memory device June 28, 2011
In a nonvolatile semiconductor memory device having n (n is an integer of two or more) electrode films stacked and having charge storage layers provided above and below each of the electrode films, when data "0" is written by injecting electrons into the charge storage layer on a source
7936004 Nonvolatile semiconductor memory device and manufacturing method thereof May 3, 2011
A nonvolatile semiconductor memory device includes a plurality of the memory strings, in which a plurality of electrically programmable memory cells is connected in series. The memory strings comprise a pillar shaped semiconductor; a first insulation film formed around the pillar shaped
7910914 Semiconductor memory and method for manufacturing the same March 22, 2011
According to an aspect of the present invention, there is provided a nonvolatile semiconductor memory including: a plurality of memory devices each having: a resistance change element, and a diode connected serially to the resistance change element; and a source conductive layer spreadin
7910432 Non-volatile semiconductor storage device and method of manufacturing the same March 22, 2011
Each of the memory strings includes: a first columnar semiconductor layer extending in a vertical direction to a substrate; a plurality of first conductive layers formed to sandwich an insulation layer with a charge trap layer and expand in a two-dimensional manner; a second columnar
7902591 Non-volatile semiconductor storage device March 8, 2011
A non-volatile semiconductor storage device has a plurality of memory strings with a plurality of electrically rewritable memory cells connected in series. Each of the memory strings includes: a memory columnar semiconductor extending in a direction perpendicular to a substrate; a tu
7868416 Semiconductor device January 11, 2011
A semiconductor device has a substrate, a source region formed on the surface portion of the substrate, a first insulating layer formed on the substrate, a gate electrode formed on the first insulating layer, a second insulating layer formed on the gate electrode, a body section conn
7868315 Semiconductor memory device and method of manufacturing the same January 11, 2011
A phase change memory device including plural memory cells is disclosed. Each of the memory cells includes memory transistors and phase change film portions formed above or below the memory transistors. The phase change film portions correspond to the respective memory transistors re
7859066 Nonvolatile semiconductor memory device and method of manufacturing the same December 28, 2010
A nonvolatile semiconductor memory device has a plurality of memory strings each including a plurality of electrically rewritable memory cells serially connected. The memory string includes a columnar semiconductor portion extending in the vertical direction from a substrate, a first
7847342 Non-volatile semiconductor storage device and method of manufacturing the same December 7, 2010
A non-volatile semiconductor storage device has a plurality of memory strings with a plurality of electrically rewritable memory cells connected in series. Each of the memory strings includes: a first columnar semiconductor layer extending in a direction perpendicular to a substrate
7847334 Non-volatile semiconductor storage device and method of manufacturing the same December 7, 2010
A non-volatile semiconductor storage device has a plurality of memory strings with a plurality of electrically rewritable memory cells connected in series. Each of the memory strings comprises: a first columnar semiconductor layer extending in a vertical direction to a substrate; a c
7808816 Semiconductor memory device and method for fabricating semiconductor memory device October 5, 2010
According to an aspect of the present invention, there is provided a semiconductor memory device, including, a semiconductor substrate, a phase-change element formed on the semiconductor substrate, the phase-change element including a phase-change film and electrode films, a joule he
7768063 Semiconductor device and method of manufacturing the same August 3, 2010
A semiconductor device comprising: a semiconductor substrate; a first conductive layer provided on a surface of the substrate and serving as one of a source and a drain; a first insulating film provided on the first conductive layer; a gate electrode film provided on the first insula
7732891 Semiconductor device June 8, 2010
A semiconductor device has a substrate, a source region formed on the surface portion of the substrate, a first insulating layer formed on the substrate, a gate electrode formed on the first insulating layer, a second insulating layer formed on the gate electrode, a body section conn
7558141 Memory system, semiconductor memory device and method of driving same July 7, 2009
A semiconductor memory device has a semiconductor substrate, first select transistors formed on the surface of said semiconductor substrate, first dummy transistors formed above said first select transistors, a plurality of memory cell transistors formed above said first dummy transistor
7539056 Nonvolatile semiconductor memory May 26, 2009
In a NAND type flash memory, control electrodes of first select transistors in a plurality memory cell units extending along a data line is integrated to constitute a first select signal line while control electrodes of second select transistor are integrated to constitute a second s










 
 
  Recently Added Patents
Rechargeable battery
Integrated transmit/receive switch
Semiconductor device and method of forming discontinuous ESD protection layers between semiconductor die
Transferases and oxidoreductases, nucleic acids encoding them and methods for making and using them
Electrophoretic element and display device
Method of publicly displaying a person's relationship status
Architecture for accelerated computer processing
  Randomly Featured Patents
Ultraviolet reflector with coolant gas holes and method
Control system for indexing compiler drive shaft that senses drive torque to initiate indexing
Computer network monitoring web interface for a computer screen
Method and system for using multiple intravascular sensing devices to detect electrical activity
5-(2,4-Dioxotetrahydro-3-furanylmethyl)norbornane-2,3-dicarboxylic acid anhydride and process for production thereof
Optical pickup apparatus and optical pickup method adapted for selectively using laser light of different wavelengths
Interactive toy
Asymmetric long-haul transmission paths with optical phase conjugation
Resonant optical filters
Mass spectrometer