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Inventor: Tamura; Yoshimitsu
Address: Chiba, JP
No. of patents: 4
Patents:
| Patent Number |
Title Of Patent |
Date Issued |
| 6249472 |
Semiconductor memory device with antifuse |
June 19, 2001 |
| The objective of the invention is to provide a type of semiconductor memory device whose antifuse can be formed without any additional film manufacturing process. A first electrode is formed by a first polysilicon film 37 formed on semiconductor substrate 30 and a second polysilicon film |
| 5679974 |
Antifuse element and semiconductor device having antifuse elements |
October 21, 1997 |
| An antifuse element for a semiconductor device, comprising a bottom electrode made from a conductive material containing a refractory metal and a top electrode made from a conductive material containing a fusible metal. The fusible metal is Al, Al alloy, Cu or Ag. The Al alloy contains |
| 5641985 |
Antifuse element and semiconductor device having antifuse elements |
June 24, 1997 |
| Antifuse elements for a semiconductor device comprise a bottom electrode, a top electrode, and an antifuse material layer. The bottom electrode is formed of a conductive material having an amorphous structure. The conductive material contains such elements as W, Ti, or a compound the |
| 5565702 |
Antifuse element, semiconductor device having antifuse elements, and method for manufacturing th |
October 15, 1996 |
| An antifuse element provided on a semiconductor device comprises a bottom electrode, an antifuse material layer, and a top electrode. At least the uppermost portion of the bottom electrode is made of metallic silicide in which the metal composition ratio is set to greater than the stoich |
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