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Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Takeisi; Hidemi
Address:
Fukuoka-ken, JP
No. of patents:
1
Patents:












Patent Number Title Of Patent Date Issued
5923690 Semiconductor laser device July 13, 1999
A gallium nitride group compound semiconductor laser device of the present invention includes: a substrate; and a layered structure provided on the substrate, wherein the layered structure includes an In.sub.z Ga.sub.1-z N active layer (0.ltoreq.z.ltoreq.1) which is formed at least in a










 
 
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