| Patent Number |
Title Of Patent |
Date Issued |
| 6558507 |
Plasma processing apparatus |
May 6, 2003 |
| A plasma processing apparatus has a substrate holder, arranged in a vessel which can be reduced in pressure, for placing a substrate to be processed there on, a process gas fed into the reaction vessel, and a cathode electrode for supplying a high-frequency wave power from a high-frequen |
| 6435130 |
Plasma CVD apparatus and plasma processing method |
August 20, 2002 |
| A plasma CVD apparatus comprising a substantially enclosed reaction chamber containing substrate holding means and a cathode electrode arranged therein, wherein a high frequency power from a high frequency power source is supplied to said cathode electrode to generate plasma between said |
| 6333079 |
Plasma CVD process |
December 25, 2001 |
| In a plasma CVD system comprises a reactor the inside of which can be evacuated, a substrate holding means provided in the reactor, a material gas feed means for feeding into the reactor a material gas for plasma CVD, a high-frequency power supply means for supplying to a plasma-producin |
| 6291029 |
Plasma processing method |
September 18, 2001 |
| To improve the processing rate and uniformity in a plasma processing for a substrate having a relatively large area, a plasma processing apparatus includes a reaction vessel which has a portion made of a dielectric member, which accommodates a film formation substrate, and which can be |
| 6279504 |
Plasma CVD system |
August 28, 2001 |
| A plasma CVD system has a reactor which can be evacuated, a substrate holding means in the reactor, a material gas feed means for feeding into the reactor a material gas for plasma CVD, a high-frequency power supply means for supplying an electrode high-frequency power of 30 MHz to 600 |
| 6152071 |
High-frequency introducing means, plasma treatment apparatus, and plasma treatment method |
November 28, 2000 |
| A high frequency introducing means is provided which comprises a high frequency electrode having a shape of a bar or plate for generating plasma by high frequency power, and an adjustment mechanism for adjusting an absolute value of reactance between an end of the electrode opposite to a |
| 6145469 |
Plasma processing apparatus and processing method |
November 14, 2000 |
| A plasma processing apparatus has a substrate holder, arranged in a reaction vessel which can be reduced in pressure, for placing a substrate to be processed thereon, means for feeding a process gas into the reaction vessel, and a cathode electrode for supplying a high-frequency wave pow |
| 6076481 |
Plasma processing apparatus and plasma processing method |
June 20, 2000 |
| One or more mismatching portions in which a characteristic impedance of a high frequency transmission cable of a cathode electrode is changed in a traveling direction of an incident wave of the high frequency are provided on the cathode electrode for use in plasma processing, whereby the |
| 6065425 |
Plasma process apparatus and plasma process method |
May 23, 2000 |
| In order to effect a plasma process at a high rate, such as formation of a high-quality deposit film having very uniform thickness and quality over a large-area substrate, (1) an oscillation frequency of an RF generator is used in the range of 30 to 600 MHz, (2) a matching circuit and a |
| 5846612 |
Process for forming high-quality deposited film utilizing plasma CVD |
December 8, 1998 |
| Provided is a process for efficiently forming a high-quality deposited film at a high deposition rate in the quality equivalent to or higher than that of films formed by the RF plasma CVD process. A stock gas is introduced under a reduced pressure into a reaction container provided with |
| 5540781 |
Plasma CVD process using a very-high-frequency and plasma CVD apparatus |
July 30, 1996 |
| A VHF plasma CVD process in which a cathode electrode is electrically divided into a plurality of elements in the axial direction of a cylindrical substrate, and a very-high-frequency energy with a frequency in the range of 60 MHz to 300 MHz is supplied to each of the divided cathode |
| 5534070 |
Plasma CVD process using a very-high-frequency and plasma CVD apparatus |
July 9, 1996 |
| A plasma CVD process comprises conducting film formation in a reaction chamber capable of being substantially vacuumed in which a plurality of cylindrical substrates are spacedly arranged on a concentric circle in said reaction chamber such that a desired discharge space is formed at the |
