| Patent Number |
Title Of Patent |
Date Issued |
| 5965057 |
Piezoelectric ceramic and manufacturing method thereof |
October 12, 1999 |
| There is provided a piezoelectric ceramic having a small mechanical factor of merit Qm and excellent heat-resisting properties, e.g., a piezoelectric ceramic for filter elements which is compatible with surface mounting and a method of manufacturing the same in a large amount and in a st |
| 5900054 |
Method of manufacturing oxide single crystal |
May 4, 1999 |
| Provided is an oxide single crystal of large size having the crystal structure of Ca.sub.3 Ga.sub.2 Ge.sub.4 O.sub.14 and containing Ge as a constituent element and a method of manufacturing thereof. The oxide single crystal is obtained by a manufacturing method comprising the steps |
| 5770101 |
Magnetostatic-wave device |
June 23, 1998 |
| A magnetostatic wave device comprises a magnetic single-crystal garnet and at least one element of the halogen group incorporated therein. A magnetostatic wave device comprises a thin magnetic garnet single-crystal film. The film consists essentially of yttrium-iron-garnet including at |
| 5766502 |
Piezoelectric ceramics and manufacturing method thereof |
June 16, 1998 |
| Piezoelectric ceramics whose mechanical quality factor Qm is small and which has an excellent heat resistance, e.g. piezoelectric ceramics for filtering elements whose group delay time characteristic is flat, phase distortion is small and which can be accommodated to surface mounting, an |
| 5701108 |
Magnetostatic wave device with a magnetic field applied parallel to an axis of easy magnetizatio |
December 23, 1997 |
| A magnetostatic wave device has an external magnetic field applied in a direction that is substantially parallel to a plane of a thin film of a magnetic single-crystal having a garnet structure. The thin film of the magnetic single-crystal has an axis of easy magnetization that is orient |
| 5589096 |
Magnetic material for high frequencies |
December 31, 1996 |
| A magnetic material for high frequencies consists essentially of a main component expressed by the general formula:where x, y, z and w take respective values within the following ranges: 0.10.ltoreq.x.ltoreq.0.60, 0.00.ltoreq.y.ltoreq.0.20, 0.20.ltoreq.z.ltoreq.0.60, 4.88.ltoreq.w.ltoreq |
| 5587015 |
Apparatus for production of single crystal oxide films by liquid-phase epitaxy |
December 24, 1996 |
| An apparatus for production of single crystal oxide films by liquid-phase epitaxy comprises an insulating core tube with an external high frequency heating means, an electroconductive cylindrical member having openings at both ends and being arranged in the core tube, and a crucible made |
| 5466388 |
Material for magnetostatic-wave devices |
November 14, 1995 |
| A material for magnetostatic wave devices comprises a thin single-crystalline magnetic film consisting essentially of a magnetic garnet containing iron, and at least one element of zirconium and hafnium incorporated therein. The content of zirconium and/or hafnium is less than or equ |
| 5458797 |
Magnetic material for high frequencies |
October 17, 1995 |
| A magnetic material for high frequencies consists essentially of a main component expressed by the general formula:where x, y, z and w take respective values within the following ranges: 0.02.ltoreq.x.ltoreq.0.80, 0.00.ltoreq.y.ltoreq.0.10, 0.30.ltoreq.z.ltoreq.0.50, 4.88.ltoreq.w.ltoreq |
| 5451426 |
Method for formation of barium titanate film |
September 19, 1995 |
| A thin film of barium titanate is formed on a substrate by immersing a substrate in an aqueous solution containing titanium ions along with a glass substance mainly comprising barium oxide and silicon dioxide. In the solution, barium ions are eluted from the glass substance with the |
| 4988650 |
Auxiliary agent for sintering ceramic material |
January 29, 1991 |
| An auxiliary agent for sintering ceramics comprises a basic composition consisting essentially of (a) 5 to 40 mol % of at least two oxides selected from the group consisting of ZnO, SnO and MnO, the sum of the contents of ZnO and MnO being not less than 5 mol %, (b) 5 to 40 mol % of |
| 4987108 |
Dielectric paste |
January 22, 1991 |
| A dielectric paste for fabrication of multilayer ceramic substrates containing capacitive circuits. The paste comprises a dielectric powder composed of a dielectric material and a vitreous binder suspended in an organic vehicle. The dielectric material consists essentially of a compo |
| 4959333 |
Non-reducing dielectric ceramic composition |
September 25, 1990 |
| A non-reducing dielectric ceramic composition consists essentially of a basic composition expressed by the general formula: xPb(Mg.sub.1/3 Nb.sub.2/3)O.sub.3 --yPb(Zn.sub.1/3 Nb.sub.2/3)O.sub.3 --zPbTiO.sub.3 where x, y and z are percentages by weight of the respective component and |
