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Takada; Tadakazu
Kawasaki, JP
No. of patents:

Patent Number Title Of Patent Date Issued
4654113 Process for fabricating a semiconductor device March 31, 1987
A method of forming an insulating layer having a planar surf on a lower wiring layer having given patterns steps at the shoulders of the patterns. On a lower wiring layer, a lower insulating layer is formed and a heat resistive material is coated over the lower insulative layer to form a
4547260 Process for fabricating a wiring layer of aluminum or aluminum alloy on semiconductor devices October 15, 1985
In the fabrication of an aluminum or aluminum alloy wiring layer on a semiconductor device by dry etching using a gas containing chlorine species, a plasma exposure step inserted into the dry etching process in order to avoid the problems due to using a chlorine radical etchant. One
4545851 Etching method for semiconductor devices October 8, 1985
An etching method for fabricating a contact hole in an insulating layer between multi-layered wiring layers of a semiconductor device. Etching is performed by chemical dry etching, in which the plasma of the etchant gas is formed in a separate chamber and fed to the etching chamber. The
4352724 Method of manufacturing a semiconductor device October 5, 1982
A method of manufacturing a semiconductor device having a multi-layer structure comprises the steps of patterning in accordance with a predetermined pattern a thin film of photoresist formed on a film to be etched which has been formed on a semiconductor substrate, etching the film t
4350563 Dry etching of metal film September 21, 1982
A process for dry etching an aluminum film or an aluminum based film in the production of a semiconductor device, wherein a mixed gas of carbon chloride and boron chloride is used as the etchant gas.

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