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Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Taira; Kazutoshi
Address:
Tsukubashi, JP
No. of patents:
1
Patents:












Patent Number Title Of Patent Date Issued
5244535 Method of manufacturing a semiconductor device including plasma treatment of contact holes September 14, 1993
Method of making a semiconductor device, wherein an etchant gas is employed to etch a contact hole through an insulation layer overlying a conduction layer as disposed on a substrate of semiconductor material such that a surface portion of the conduction layer is selectively exposed by t










 
 
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