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Tabatabaie; Kamal
Sharon, MA
No. of patents:

Patent Number Title Of Patent Date Issued
7994550 Semiconductor structures having both elemental and compound semiconductor devices on a common su August 9, 2011
A semiconductor structure comprising: a substrate; a seed layer supported by the substrate; an elemental semiconductor layer disposed over a first portion of the seed layer; and a compound semiconductor layer disposed on a second portion of the seed layer. The first portion of the seed l
7834456 Electrical contacts for CMOS devices and III-V devices formed on a silicon substrate November 16, 2010
A semiconductor structure having a substrate, a seed layer over the substrate; a silicon layer disposed on the seed layer; a transistor device in the silicon layer; a III-V device disposed on the seed layer; and a plurality of electrical contacts, each one of the electrical contacts
7692222 Atomic layer deposition in the formation of gate structures for III-V semiconductor April 6, 2010
A semiconductor structure and method wherein a recess is disposed in a surface portion of a semiconductor structure and a dielectric film is disposed on and in contract with the semiconductor. The dielectric film has an aperture therein. Portions of the dielectric film are disposed a
7662698 Transistor having field plate February 16, 2010
A method for forming a transistor device having a field plate. The method includes forming a structure having a source, a drain, and a Tee gate. A photo-resist layer is formed on the structure with an opening therein only the one of two distal ends of the Tee gate. A metal is deposited

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