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Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Sung; Youn-joon
Address:
Yongin-si, KR
No. of patents:
11
Patents:












Patent Number Title Of Patent Date Issued
8129260 Semiconductor substrates having low defects and methods of manufacturing the same March 6, 2012
A semiconductor substrate includes a first semiconductor layer and a second semiconductor layer. The first semiconductor layer is formed of II-VI-group semiconductor material, III-V-group semiconductor material, or II-VI-group semiconductor material and III-V-group semiconductor mate
8114691 Semiconductor light emitting device having textured structure and method of manufacturing the sa February 14, 2012
A semiconductor light emitting diode having a textured structure and a method of manufacturing the same are provided. The semiconductor light emitting diode includes a first semiconductor layer formed into a textured structure, an intermediate layer formed between the textured struct
8017421 Method of manufacturing semiconductor light emitting device September 13, 2011
Provided is a method of manufacturing semiconductor light emitting devices including: forming light emitting structures by sequentially depositing a first material layer, an active layer and a second material layer; forming the roughness pattern on a region of the bottom of a substra
7935554 Semiconductor light emitting device and method of manufacturing the same May 3, 2011
Provided are a semiconductor light emitting device having a nano pattern and a method of manufacturing the semiconductor light emitting device. The semiconductor light emitting device includes: a semiconductor layer comprising a plurality of nano patterns, wherein the plurality of nano
7736925 Method of fabricating nitride-based semiconductor laser diode June 15, 2010
A method of manufacturing a nitride-based semiconductor laser diode that can minimize optical absorption on a cavity mirror plane and improve the surface roughness of the cavity mirror plane is provided. The method includes the steps of: forming on a (0001) GaN (gallium nitride) subs
7682852 Method of manufacturing semiconductor laser device including light shield plate March 23, 2010
Provided is a method of manufacturing a semiconductor laser device having a light shield film comprising: forming a light emission structure by depositing a first clad layer, an active layer and a second clad layer on a substrate; depositing a light shield film and a protection film on t
7655959 Semiconductor light emitting device having textured structure and method of manufacturing the sa February 2, 2010
A semiconductor light emitting diode having a textured structure and a method of manufacturing the same are provided. The semiconductor light emitting diode includes a first semiconductor layer formed into a textured structure, an intermediate layer formed between the textured struct
7642561 Semiconductor light emitting diode having efficiency and method of manufacturing the same January 5, 2010
Provided is a semiconductor light emitting diode having a textured structure formed on a substrate. In a method of manufacturing the semiconductor light emitting diode, a metal layer is formed on the substrate, and a metal oxide layer having holes is formed by anodizing the metal lay
7632742 Substrate for growing Pendeo epitaxy and method of forming the same December 15, 2009
A Pendeo-epitaxy growth substrate and a method of manufacturing the same are provided. The Pendeo-epitaxy growth substrate includes a substrate, a plurality of pattern areas formed on the substrate in a first direction for Pendeo-epitaxy growth, and at least one solution blocking layer
7483463 Ridge-waveguide semiconductor laser diode January 27, 2009
A ridge-waveguide semiconductor laser diode with an improved current injection structure is provided. The ridge-waveguide semiconductor laser diode includes: a substrate; a lower multi-semiconductor layer formed on the substrate; an active layer formed on the lower multi-semiconductor
7406111 Semiconductor laser diode and method for manufacturing the same July 29, 2008
In the semiconductor laser diode, a first material layer, an active layer, and a second material layer are sequentially formed on a substrate, a ridge portion and a first protrusion portion are formed on the second material layer in a direction perpendicular to the active layer, the










 
 
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