Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Sung; Youn-joon
Address:
Yongin-si, KR
No. of patents:
11
Patents:












Patent Number Title Of Patent Date Issued
8129260 Semiconductor substrates having low defects and methods of manufacturing the same March 6, 2012
A semiconductor substrate includes a first semiconductor layer and a second semiconductor layer. The first semiconductor layer is formed of II-VI-group semiconductor material, III-V-group semiconductor material, or II-VI-group semiconductor material and III-V-group semiconductor mate
8114691 Semiconductor light emitting device having textured structure and method of manufacturing the sa February 14, 2012
A semiconductor light emitting diode having a textured structure and a method of manufacturing the same are provided. The semiconductor light emitting diode includes a first semiconductor layer formed into a textured structure, an intermediate layer formed between the textured struct
8017421 Method of manufacturing semiconductor light emitting device September 13, 2011
Provided is a method of manufacturing semiconductor light emitting devices including: forming light emitting structures by sequentially depositing a first material layer, an active layer and a second material layer; forming the roughness pattern on a region of the bottom of a substra
7935554 Semiconductor light emitting device and method of manufacturing the same May 3, 2011
Provided are a semiconductor light emitting device having a nano pattern and a method of manufacturing the semiconductor light emitting device. The semiconductor light emitting device includes: a semiconductor layer comprising a plurality of nano patterns, wherein the plurality of nano
7736925 Method of fabricating nitride-based semiconductor laser diode June 15, 2010
A method of manufacturing a nitride-based semiconductor laser diode that can minimize optical absorption on a cavity mirror plane and improve the surface roughness of the cavity mirror plane is provided. The method includes the steps of: forming on a (0001) GaN (gallium nitride) subs
7682852 Method of manufacturing semiconductor laser device including light shield plate March 23, 2010
Provided is a method of manufacturing a semiconductor laser device having a light shield film comprising: forming a light emission structure by depositing a first clad layer, an active layer and a second clad layer on a substrate; depositing a light shield film and a protection film on t
7655959 Semiconductor light emitting device having textured structure and method of manufacturing the sa February 2, 2010
A semiconductor light emitting diode having a textured structure and a method of manufacturing the same are provided. The semiconductor light emitting diode includes a first semiconductor layer formed into a textured structure, an intermediate layer formed between the textured struct
7642561 Semiconductor light emitting diode having efficiency and method of manufacturing the same January 5, 2010
Provided is a semiconductor light emitting diode having a textured structure formed on a substrate. In a method of manufacturing the semiconductor light emitting diode, a metal layer is formed on the substrate, and a metal oxide layer having holes is formed by anodizing the metal lay
7632742 Substrate for growing Pendeo epitaxy and method of forming the same December 15, 2009
A Pendeo-epitaxy growth substrate and a method of manufacturing the same are provided. The Pendeo-epitaxy growth substrate includes a substrate, a plurality of pattern areas formed on the substrate in a first direction for Pendeo-epitaxy growth, and at least one solution blocking layer
7483463 Ridge-waveguide semiconductor laser diode January 27, 2009
A ridge-waveguide semiconductor laser diode with an improved current injection structure is provided. The ridge-waveguide semiconductor laser diode includes: a substrate; a lower multi-semiconductor layer formed on the substrate; an active layer formed on the lower multi-semiconductor
7406111 Semiconductor laser diode and method for manufacturing the same July 29, 2008
In the semiconductor laser diode, a first material layer, an active layer, and a second material layer are sequentially formed on a substrate, a ridge portion and a first protrusion portion are formed on the second material layer in a direction perpendicular to the active layer, the










 
 
  Recently Added Patents
Preserving privacy of digital communication information
Real-time RSL monitoring in a web-based application
Micro positioning test socket and methods for active precision alignment and co-planarity feedback
Stacked type semiconductor memory device and chip selection circuit
Audio signal clip detection
Vibration power generator and vibration power generation device, and communication device and electronic equipment with vibration power generation device
Steering wheel
  Randomly Featured Patents
Data communication system with an SPI bus having a plurality of devices wherein data communications are enabled using communication protocols optimum to respective devices
Interproximal floss brush
Railway locomotive truck
Fiber optic matrix coding method and apparatus for radiation image amplifier
Ladder leveling device
Pendant setting for gems
Method for determining data rate and packet length in mobile wireless networks
Phase adjustment circuit including a ring oscillator in a phase locked loop
.alpha.-olefin/isobutene diblock copolymers
Production order determining method