| Patent Number |
Title Of Patent |
Date Issued |
| 8129260 |
Semiconductor substrates having low defects and methods of manufacturing the same |
March 6, 2012 |
| A semiconductor substrate includes a first semiconductor layer and a second semiconductor layer. The first semiconductor layer is formed of II-VI-group semiconductor material, III-V-group semiconductor material, or II-VI-group semiconductor material and III-V-group semiconductor mate |
| 8114691 |
Semiconductor light emitting device having textured structure and method of manufacturing the sa |
February 14, 2012 |
| A semiconductor light emitting diode having a textured structure and a method of manufacturing the same are provided. The semiconductor light emitting diode includes a first semiconductor layer formed into a textured structure, an intermediate layer formed between the textured struct |
| 8017421 |
Method of manufacturing semiconductor light emitting device |
September 13, 2011 |
| Provided is a method of manufacturing semiconductor light emitting devices including: forming light emitting structures by sequentially depositing a first material layer, an active layer and a second material layer; forming the roughness pattern on a region of the bottom of a substra |
| 7935554 |
Semiconductor light emitting device and method of manufacturing the same |
May 3, 2011 |
| Provided are a semiconductor light emitting device having a nano pattern and a method of manufacturing the semiconductor light emitting device. The semiconductor light emitting device includes: a semiconductor layer comprising a plurality of nano patterns, wherein the plurality of nano |
| 7736925 |
Method of fabricating nitride-based semiconductor laser diode |
June 15, 2010 |
| A method of manufacturing a nitride-based semiconductor laser diode that can minimize optical absorption on a cavity mirror plane and improve the surface roughness of the cavity mirror plane is provided. The method includes the steps of: forming on a (0001) GaN (gallium nitride) subs |
| 7682852 |
Method of manufacturing semiconductor laser device including light shield plate |
March 23, 2010 |
| Provided is a method of manufacturing a semiconductor laser device having a light shield film comprising: forming a light emission structure by depositing a first clad layer, an active layer and a second clad layer on a substrate; depositing a light shield film and a protection film on t |
| 7655959 |
Semiconductor light emitting device having textured structure and method of manufacturing the sa |
February 2, 2010 |
| A semiconductor light emitting diode having a textured structure and a method of manufacturing the same are provided. The semiconductor light emitting diode includes a first semiconductor layer formed into a textured structure, an intermediate layer formed between the textured struct |
| 7642561 |
Semiconductor light emitting diode having efficiency and method of manufacturing the same |
January 5, 2010 |
| Provided is a semiconductor light emitting diode having a textured structure formed on a substrate. In a method of manufacturing the semiconductor light emitting diode, a metal layer is formed on the substrate, and a metal oxide layer having holes is formed by anodizing the metal lay |
| 7632742 |
Substrate for growing Pendeo epitaxy and method of forming the same |
December 15, 2009 |
| A Pendeo-epitaxy growth substrate and a method of manufacturing the same are provided. The Pendeo-epitaxy growth substrate includes a substrate, a plurality of pattern areas formed on the substrate in a first direction for Pendeo-epitaxy growth, and at least one solution blocking layer |
| 7483463 |
Ridge-waveguide semiconductor laser diode |
January 27, 2009 |
| A ridge-waveguide semiconductor laser diode with an improved current injection structure is provided. The ridge-waveguide semiconductor laser diode includes: a substrate; a lower multi-semiconductor layer formed on the substrate; an active layer formed on the lower multi-semiconductor |
| 7406111 |
Semiconductor laser diode and method for manufacturing the same |
July 29, 2008 |
| In the semiconductor laser diode, a first material layer, an active layer, and a second material layer are sequentially formed on a substrate, a ridge portion and a first protrusion portion are formed on the second material layer in a direction perpendicular to the active layer, the |
