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Inventor:
Sung; Chae Gee
Address:
Miyagi-ken, JP
No. of patents:
23
Patents:












Patent Number Title Of Patent Date Issued
6878967 Thin film transistor, method of producing the same, liquid crystal display, and thin film formin April 12, 2005
The invention intends to provide a TFT having a gate insulating film which has a high dielectric withstand voltage and can ensure a desired carrier mobility in an adjacent semiconductor active film. A gate electrode and a semiconductor active film are formed on a transparent substrate wi
6852998 Thin-film transistor substrate and liquid crystal display February 8, 2005
A source line is directly connected to a source terminal composed of indium zinc oxide in a thin-film transistor substrate. A gate line is directly connected to a gate terminal composed of indium zinc oxide. Alternatively, drain electrodes of thin-film transistors for switching a plurali
6800502 Thin film transistor, method of producing the same, liquid crystal display, and thin film formin October 5, 2004
The invention intends to provide a TFT having a gate insulating film which has a high dielectric withstand voltage and can ensure a desired carrier mobility in an adjacent semiconductor active film. A gate electrode and a semiconductor active film are formed on a transparent substrate wi
6777354 Semiconductor device and method of manufacturing the same August 17, 2004
The present invention provides a semiconductor device capable of preventing deterioration in carrier mobility of a semiconductor layer, which is a quality of the interface between the semiconductor layer and an insulating layer, and a method of manufacturing the semiconductor device. In
6649936 Thin-film transistor substrate and liquid crystal display November 18, 2003
A source line is directly connected to a source terminal composed of indium zinc oxide in a thin-film transistor substrate. A gate line is directly connected to a gate terminal composed of indium zinc oxide. Alternatively, drain electrodes of thin-film transistors for switching a plurali
6639279 Semiconductor transistor having interface layer between semiconductor and insulating layers October 28, 2003
The present invention provides a semiconductor device capable of preventing deterioration in carrier mobility of a semiconductor layer, which is a quality of the interface between the semiconductor layer and an insulating layer, and a method of manufacturing the semiconductor device. In
6451632 Method for manufacturing thin-film transistor substrate, liquid crystal display unit September 17, 2002
The present invention provides a thin-film transistor substrate comprising: a gate electrode 40 and a gate insulating film 41 formed on a substrate 36; a semiconductor active film 42 oppositely provided on the gate electrode via the gate insulating film; a pair of ohmic contact films 43
6433764 Liquid crystal display August 13, 2002
A liquid crystal display of a lateral electric field driving system having a high viewing angle characteristic and a high aperture ratio comprises a pair of substrates disposed with a space therebetween, a liquid crystal filling up the space between the pair of substrates, a plurality of
6432755 Thin film transistor and manufacturing method therefor August 13, 2002
A TFT structure having sufficiently low resistance wiring is provided, in which characteristic defects thereof caused by undercuts in a barrier metal layer can be prevented, the undercuts formed in a step for processing a source and a drain electrode composed of copper. The TFT struc
6417900 Liquid crystal display unit with conductive light-shielding member having substantially the same July 9, 2002
A liquid crystal display unit has wider viewing angles and a brighter display. In this display unit, an alignment film is not required to be processed for alignment of a liquid crystal, thereby simplifying the manufacturing process. A first substrate and a second substrate are dispos
6407780 Thin-film transistor substrate using aluminum to form low-resistance interconnection and liquid June 18, 2002
A thin-film transistor substrate includes a substrate; an underlying metal film disposed on the substrate, the underlying metal film being formed of a metal capable of being electrically connected to an indium tin oxide film used to form a gate terminal, a source terminal, and a pixel
6355943 Thin film transistor, method of producing the same, liquid crystal display, and thin film formin March 12, 2002
The invention intends to provide a TFT having a gate insulating film which has a high dielectric withstand voltage and can ensure a desired carrier mobility in an adjacent semiconductor active film. A gate electrode and a semiconductor active film are formed on a transparent substrate wi
6350995 Thin film transistor and manufacturing method therefore February 26, 2002
A TFT structure having sufficiently low resistance wiring is provided. The present invention prevents the characteristic defects caused by undercuts in a barrier metal layer. In the prior art, the undercuts are formed by a step for processing a source and a drain electrode composed of co
6303946 Thin film transistor substrate and liquid crystal display unit having a low-resistance silicon c October 16, 2001
The present invention provides a thin-film transistor substrate comprising: a gate electrode 40 and a gate insulating film 41 formed on a substrate 36; a semiconductor active film 42 oppositely provided on the gate electrode via the gate insulating film; a pair of ohmic contact films 43
6278504 Thin film transistor for liquid crystal display device having a semiconductor layer's width smal August 21, 2001
A thin film transistor for liquid crystal display device including a gate electrode 42 formed on a transparent substrate 41, an insulation layer 43 formed to cover the upper surface of the transparent substrate and the gate electrode, a semiconductor layer 46 formed on the insulating lay
6271903 Liquid crystal display device having a light shielding matrix August 7, 2001
A liquid crystal display device composed of: a first substrate and a second substrates; a liquid crystal layer provided between the first and second substrates; a plurality of pixel regions provided on the surface opposing the second substrate of the first substrate, each of which pixel
6211553 Thin-film transistor, a method for manufacturing same, and a liquid crystal display device using April 3, 2001
A thin-film transistor comprises a semiconductor unit 60 constituted of a channel formation portion 61 and a source region 63 and a drain region 62 sandwiching the channel formation portion 61 therebetween, a transparent pixel electrode 54 made of indium tin oxide, a drain electrode 57 a
6184945 Liquid crystal display apparatus in which electrode film forming capacitor in cooperation with p February 6, 2001
A liquid crystal display apparatus comprises: a substrate; gate wires and source wires formed in a matrix fashion on the substrate; gate electrodes formed close to points of intersection between the gate wires and the source wires, the gate electrodes being connected electrically to the
6166794 Liquid crystal device including gate insulating film and layer insulating film having different December 26, 2000
A liquid crystal display device comprises a first substrate, a second substrate disposed opposite to the first substrate, a liquid crystal sealed in a space between the first and the second substrate, gate lines formed in longitudinal rows on the first. substrate, layer insulating film
6052163 Thin film transistor and liquid crystal display device April 18, 2000
A liquid crystal display element of the present invention is prepared according to a top-gate structure in which a gate electrode is formed on a semiconductor film. The liquid crystal display element is provided with a first substrate and a second substrate each having an orientation fil
5978058 Thin film transistor liquid crystal display with a silicide layer formed inside a contact hole a November 2, 1999
There are provided a thin film transistor liquid crystal display device in which an aluminum layer and an ITO layer can be connected with simplicity and certainty and a fabricating process therefor.A thin film transistor liquid crystal display device comprising: a pair of substrates; a l
5953092 Liquid crystal device with split pixel electrodes and with intermediate electrodes used for bise September 14, 1999
A liquid-crystal display device having liquid crystal provided between a pair of opposed substrates includes a common electrode formed on a surface of one substrate facing the liquid crystal; surrounding electrodes formed on a surface of the other substrate facing the liquid crystal, the
5824572 Method of manufacturing thin film transistor October 20, 1998
A method of manufacturing a thin film transistor comprising the steps of: forming a gate electrode on the surface of a substrate; forming a gate insulation film covering the gate electrode; forming an active semiconductor layer and an ohmic contact layer on the gate insulation film;










 
 
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