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Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Sun; Zhi-Wen
Address:
San Jose, CA
No. of patents:
22
Patents:












Patent Number Title Of Patent Date Issued
8580090 Combinatorial electrochemical deposition November 12, 2013
Combinatorial electrochemical deposition is described, including dividing a wafer into a plurality of substrates for combinatorial processing, immersing the plurality of substrates at least partially into a plurality of cells, within one integrated tool, including electrolytes, the cells
8283214 Methods for forming nickel oxide films for use with resistive switching memory devices October 9, 2012
Methods for forming a NiO film on a substrate for use with a resistive switching memory device are presenting including: preparing a nickel ion solution; receiving the substrate, where the substrate includes a bottom electrode, the bottom electrode utilized as a cathode; forming a Ni
8278215 Noble metal activation layer October 2, 2012
Processes for minimizing contact resistance when using nickel silicide (NiSi) and other similar contact materials are described. These processes include optimizing silicide surface cleaning, silicide surface passivation against oxidation and techniques for diffusion barrier/catalyst
8263427 Combinatorial screening of transparent conductive oxide materials for solar applications September 11, 2012
Embodiments of the current invention include methods of improving a process of forming a textured TCO film by combinatorial methods. The combinatorial method may include depositing a TCO by physical vapor deposition or sputtering, annealing the TCO, and etching the TCO where at least
8143164 Formation of a zinc passivation layer on titanium or titanium alloys used in semiconductor proce March 27, 2012
Embodiments of the current invention describe methods of processing a semiconductor substrate that include applying a zincating solution to the semiconductor substrate to form a zinc passivation layer on the titanium-containing layer, the zincating solution comprising a zinc salt, Fe
7972897 Methods for forming resistive switching memory elements July 5, 2011
Resistive switching memory elements are provided that may contain electroless metal electrodes and metal oxides formed from electroless metal. The resistive switching memory elements may exhibit bistability and may be used in high-density multi-layer memory integrated circuits. Elect
7968462 Noble metal activation layer June 28, 2011
Processes for minimizing contact resistance when using nickel silicide (NiSi) and other similar contact materials are described. These processes include optimizing silicide surface cleaning, silicide surface passivation against oxidation and techniques for diffusion barrier/catalyst
7884036 Methods for treating substrates in preparation for subsequent processes February 8, 2011
Methods for treating a substrate in preparation for a subsequent process are presented, the method including: receiving the substrate, the substrate comprising conductive regions and dielectric regions; and applying an oxidizing agent to the substrate in a manner so that the dielectr
7799740 Systems and methods for monitoring and controlling combinatorial processes September 21, 2010
Method for monitoring and controlling a combinatorial process are presenting including: receiving a substrate; executing the combinatorial process, wherein the combinatorial process includes an in-line chemical preparation; analyzing the in-line chemical preparation for conformance w
7704789 Methods for forming resistive switching memory elements April 27, 2010
Resistive switching memory elements are provided that may contain electroless metal electrodes and metal oxides formed from electroless metal. The resistive switching memory elements may exhibit bistability and may be used in high-density multi-layer memory integrated circuits. Elect
7678607 Methods for forming resistive switching memory elements March 16, 2010
Resistive switching memory elements are provided that may contain electroless metal electrodes and metal oxides formed from electroless metal. The resistive switching memory elements may exhibit bistability and may be used in high-density multi-layer memory integrated circuits. Elect
7504335 Grafted seed layer for electrochemical plating March 17, 2009
Generally, the process includes depositing a barrier layer and seed layer on a feature formed in a dielectric layer, performing a grafting process, initiating a copper layer and then filing the feature by use of a bulk copper fill process. Copper features formed according to aspects
6986835 Apparatus for plating solution analysis January 17, 2006
A method and apparatus for analyzing plating solutions. The apparatus generally includes a plating cell, a reference electrolyte input, one or more external additive pumps, and a process controller. In one embodiment, the plating cell includes a cavity therein having a larger volumet
6852242 Cleaning of multicompositional etchant residues February 8, 2005
A substrate processing apparatus has a chamber with a substrate transport to transport a substrate onto a substrate support in the chamber, a gas supply to provide a gas in the chamber, a gas energizer to energize the gas, and a gas exhaust to exhaust the gas. A controller operates one o
6808647 Methodologies to reduce process sensitivity to the chamber condition October 26, 2004
A method and apparatus for reducing the sensitivity of semiconductor processing to chamber conditions is provided. Process repeatability of common processes are affected by changing surface conditions which alter the recombination rates of processing chemicals to the chamber surfaces.
6808611 Methods in electroanalytical techniques to analyze organic components in plating baths October 26, 2004
Embodiments of the invention provide an electro-analytical method for determining the concentration of an organic additive in an acidic or basic metal plating bath using an organic chemical analyzer. The method includes preparing a supporting-electrolyte solution, preparing a testing sol
6773569 Potential pulse-scan methods of analyzing organic additives in plating baths with multi-componen August 10, 2004
A cyclic voltammetric method for measuring the concentration of additives in a plating solution. The method generally includes providing the plating solution, having an unknown concentration of an additive to be measured therein and cycling the potential of an inert working electrode thr
6699399 Self-cleaning etch process March 2, 2004
A process for etching a substrate 25 in an etching chamber 30, and simultaneously cleaning a thin, non-homogeneous, etch residue deposited on the surfaces of the walls 45 and components of the etching chamber 30. In the etching step, process gas comprising etchant gas is used to etch a
6447637 Process chamber having a voltage distribution electrode September 10, 2002
The present invention provides a process chamber and voltage distributive electrode (VDE) which distributes capacitive coupling between an inductive source and a plasma in a process chamber. The VDE is preferably slotted defining energy opaque and energy transparent portions which enable
6447636 Plasma reactor with dynamic RF inductive and capacitive coupling control September 10, 2002
The invention provides a system and a method for dynamic RF inductive and capacitive coupling control to improve plasma substrate processing, as well as for achieving contamination and defect reduction. A plasma reactor includes a substrate support disposed in a chamber. An RF coil is di
6379575 Treatment of etching chambers using activated cleaning gas April 30, 2002
An apparatus 20 and process for treating and conditioning an etching chamber 30, and cleaning a thin, non-homogeneous, etch residue on the walls 45 and components of the etching chamber 30. In the etching step, a substrate 25 is etched in the etching chamber 30 to deposit a thin etch
6136211 Self-cleaning etch process October 24, 2000
A process for etching a substrate 25 in an etching chamber 30, and simultaneously cleaning a thin, non-homogeneous, etch residue deposited on the surfaces of the walls 45 and components of the etching chamber 30. In the etching step, process gas comprising etchant gas is used to etch a










 
 
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