| Patent Number |
Title Of Patent |
Date Issued |
| 7129136 |
Semiconductor memory device and manufacturing method thereof |
October 31, 2006 |
| A semiconductor memory device which more reliably retains electrons trapped in its charge-trapping regions. A high-dielectric gate insulating film is grown on a semiconductor substrate. This gate insulating film is composed of first and second oxides, where the second oxide has a smaller |
| 6949805 |
Semiconductor device having low interface state density and method for fabricating the same |
September 27, 2005 |
| The semiconductor device comprises an intermediate layer formed on a semiconductor substrate 6, the intermediate layer 12 being formed of an oxide containing a first element which is either of a III group element and a V group element, an insulation film formed on the intermediate la |
| 6809371 |
Semiconductor memory device and manufacturing method thereof |
October 26, 2004 |
| A semiconductor memory device which more reliably retains electrons trapped in its charge-trapping regions. A high-dielectric gate insulating film is grown on a semiconductor substrate. This gate insulating film is composed of first and second oxides, where the second oxide has a smaller |
| 6780699 |
Semiconductor device and method for fabricating the same |
August 24, 2004 |
| A semiconductor device in which the insulation characteristics of an insulating film of multilayer structure including a lower-layer insulating film and a high-dielectric-constant film formed on the lower-layer insulating film are ensured, and a method for fabricating such a semicond |
| 6573527 |
Quantum semiconductor device including quantum dots and a fabrication process thereof |
June 3, 2003 |
| A quantum semiconductor device includes intermediate layers of a first semiconductor crystal having a first lattice constant and stacked repeatedly, and a plurality of quantum dots of a second semiconductor crystal having a second lattice constant different from the first lattice con |
| 6459107 |
Photodetector having a mixed crystal layer of SiGeC |
October 1, 2002 |
| A photodetector includes a substrate and an optical absorption layer provided on the substrate, wherein the optical absorption layer is formed of a mixed crystal of Si, Ge and C. |
| 6281519 |
Quantum semiconductor memory device including quantum dots |
August 28, 2001 |
| A quantum semiconductor memory device includes a quantum structure formed on a substrate, wherein the quantum structure includes a plurality of self-organized quantum dots forming a strained heteroepitaxial system with respect to the substrate and an accumulation layer formed adjacent to |
| 6235547 |
Semiconductor device and method of fabricating the same |
May 22, 2001 |
| In a semiconductor device, concave sections in which an opening area becomes small in proportion as a depth becomes deep are formed in a crystal layer, and a quantum structure is formed on at least one crystal face of a bottom section of the concave section and a border formed betwee |
| 6177684 |
Quantum semiconductor device having a quantum dot structure |
January 23, 2001 |
| A quantum semiconductor device includes a plurality of intermediate layers stacked on each other repeatedly, each being formed of a first semiconductor crystal having a first lattice constant and including a plurality of quantum dots of a second semiconductor crystal having a second |
| 6011271 |
Semiconductor device and method of fabricating the same |
January 4, 2000 |
| In a semiconductor device, concave sections in which an opening area becomes small in proportion as a depth becomes deep are formed in a crystal layer, and a quantum structure is formed on at least one crystal face of a bottom section of the concave section and a border formed betwee |
| 5936258 |
Optical semiconductor memory device and read/write method therefor |
August 10, 1999 |
| A wavelength-domain-multiplication memory comprises a first semiconductor layer including a first conductivity type impurity, a carrier barrier semiconductor layer formed on the first semiconductor layer, and quantum dots formed in the carrier barrier semiconductor layer. |
| 5392307 |
Vertical optoelectronic semiconductor device |
February 21, 1995 |
| An active layer having a predetermined effective band gap, a predetermined effective refractive index, and a predetermined thickness is sandwiched between a first clad layer and a second clad layer. Each of the clad layers has an effective band gap wider than that of the active layer, an |
