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Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Sugiyama; Yoshihiro
Address:
Kawasaki, JP
No. of patents:
12
Patents:












Patent Number Title Of Patent Date Issued
7129136 Semiconductor memory device and manufacturing method thereof October 31, 2006
A semiconductor memory device which more reliably retains electrons trapped in its charge-trapping regions. A high-dielectric gate insulating film is grown on a semiconductor substrate. This gate insulating film is composed of first and second oxides, where the second oxide has a smaller
6949805 Semiconductor device having low interface state density and method for fabricating the same September 27, 2005
The semiconductor device comprises an intermediate layer formed on a semiconductor substrate 6, the intermediate layer 12 being formed of an oxide containing a first element which is either of a III group element and a V group element, an insulation film formed on the intermediate la
6809371 Semiconductor memory device and manufacturing method thereof October 26, 2004
A semiconductor memory device which more reliably retains electrons trapped in its charge-trapping regions. A high-dielectric gate insulating film is grown on a semiconductor substrate. This gate insulating film is composed of first and second oxides, where the second oxide has a smaller
6780699 Semiconductor device and method for fabricating the same August 24, 2004
A semiconductor device in which the insulation characteristics of an insulating film of multilayer structure including a lower-layer insulating film and a high-dielectric-constant film formed on the lower-layer insulating film are ensured, and a method for fabricating such a semicond
6573527 Quantum semiconductor device including quantum dots and a fabrication process thereof June 3, 2003
A quantum semiconductor device includes intermediate layers of a first semiconductor crystal having a first lattice constant and stacked repeatedly, and a plurality of quantum dots of a second semiconductor crystal having a second lattice constant different from the first lattice con
6459107 Photodetector having a mixed crystal layer of SiGeC October 1, 2002
A photodetector includes a substrate and an optical absorption layer provided on the substrate, wherein the optical absorption layer is formed of a mixed crystal of Si, Ge and C.
6281519 Quantum semiconductor memory device including quantum dots August 28, 2001
A quantum semiconductor memory device includes a quantum structure formed on a substrate, wherein the quantum structure includes a plurality of self-organized quantum dots forming a strained heteroepitaxial system with respect to the substrate and an accumulation layer formed adjacent to
6235547 Semiconductor device and method of fabricating the same May 22, 2001
In a semiconductor device, concave sections in which an opening area becomes small in proportion as a depth becomes deep are formed in a crystal layer, and a quantum structure is formed on at least one crystal face of a bottom section of the concave section and a border formed betwee
6177684 Quantum semiconductor device having a quantum dot structure January 23, 2001
A quantum semiconductor device includes a plurality of intermediate layers stacked on each other repeatedly, each being formed of a first semiconductor crystal having a first lattice constant and including a plurality of quantum dots of a second semiconductor crystal having a second
6011271 Semiconductor device and method of fabricating the same January 4, 2000
In a semiconductor device, concave sections in which an opening area becomes small in proportion as a depth becomes deep are formed in a crystal layer, and a quantum structure is formed on at least one crystal face of a bottom section of the concave section and a border formed betwee
5936258 Optical semiconductor memory device and read/write method therefor August 10, 1999
A wavelength-domain-multiplication memory comprises a first semiconductor layer including a first conductivity type impurity, a carrier barrier semiconductor layer formed on the first semiconductor layer, and quantum dots formed in the carrier barrier semiconductor layer.
5392307 Vertical optoelectronic semiconductor device February 21, 1995
An active layer having a predetermined effective band gap, a predetermined effective refractive index, and a predetermined thickness is sandwiched between a first clad layer and a second clad layer. Each of the clad layers has an effective band gap wider than that of the active layer, an










 
 
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