| Patent Number |
Title Of Patent |
Date Issued |
| 6891270 |
Semiconductor device and method of manufacturing the same |
May 10, 2005 |
| A simple technique of forming a low-resistant wire is provided in place of a Damascene method. In a three-layer wire composed of a first layer metal film wire, a second layer metal film wire that has fixed side etching portions, and an insulating film pattern, a low-resistant metal such |
| 6867431 |
Semiconductor device and method for manufacturing the same |
March 15, 2005 |
| A TFT formed on an insulating substrate source, drain and channel regions, a gate insulating film formed on at least the channel region and a gate electrode formed on the gate insulating film. Between the channel region and the drain region, a region having a higher resistivity is provid |
| 6149988 |
Method and system of laser processing |
November 21, 2000 |
| A method for treating an object with a laser including emitting a laser beam from a laser; expanding the laser beam in a first direction; removing a portion of the laser beam though a mask, the portion including at least edges of the expanded laser beam extending in the first direction; |
| 6049092 |
Semiconductor device and method for manufacturing the same |
April 11, 2000 |
| A TFT formed on an insulating substrate source, drain and channel regions, a gate insulating film formed on at least the channel region and a gate electrode formed on the gate insulating film. Between the channel region and the drain region, a region having a higher resistivity is provid |
| 5976988 |
Etching material and etching method |
November 2, 1999 |
| An alumina film, a silicon oxide film, and a silicon nitride film formed on a substrate containing a large amount of alumina are etched by using an etching material in which the concentration of ammonium fluoride, which is a component of BHF, is set low. Etching is performed by using an |
| 5885888 |
Etching material and etching process |
March 23, 1999 |
| An etching material comprising at least phosphoric acid, acetic acid, and nitric acid, with chromic acid added therein. Also claimed is an etching process using the etching material above, provided that the process comprises selectively etching, by using the solution, an aluminum oxide |
| 5856853 |
Short circuit preventing film of liquid crystal electro-optical device and manufacturing method |
January 5, 1999 |
| In an active matrix type liquid crystal electro-optical device using thin-film transistors, a metal film is formed on a transparent electrode that is opposed to the thin-film transistors. The metal film is oxidized by anode oxidation method using the electrode as an anode, to form a meta |
| 5849604 |
Method of manufacturing a semiconductor device |
December 15, 1998 |
| A resist mask is formed on an electrode mainly made of aluminum. An anodic oxide film is formed on the electrode excluding the masked region by performing anodization in an electrolyte. A contact hole can easily be formed in the masked region because the anodic oxide film is not formed |
| 5838508 |
Color filter and process for fabricating the same and electro-optical device |
November 17, 1998 |
| A color filter comprising a substrate having thereon a layered structure comprising from the substrate side in this order, a color filter layer, a smoothing layer, a protective layer having a high reflectance and low absorptivity of laser beam, and a transparent electrically conductive |
| 5830786 |
Process for fabricating electronic circuits with anodically oxidized scandium doped aluminum wir |
November 3, 1998 |
| A process for fabricating an electronic circuit by oxidizing the surroundings of a metallic interconnection such as of aluminum, tantalum, and titanium, wherein anodic oxidation is effected at a temperature not higher than room temperature, preferably, at 10.degree. C. or lower, and |
| 5747355 |
Method for producing a transistor using anodic oxidation |
May 5, 1998 |
| A method for producing a thin-film transistor (TFT) in which the gate electrode is offset from the source and drain without detriment to the characteristics of the device or to manufacturing yield, and a structure for such a TFT, are disclosed. A gate electrode is formed using a material |
| 5736434 |
Method for manufacturing a semiconductor device utilizing an anodic oxidation |
April 7, 1998 |
| An anodic oxide containing impurities at a low concentration and thereby improved in film quality, and a process for fabricating the same. The process comprises increasing the current between a metallic thin film and a cathode until a voltage therebetween reaches a predetermined value, a |
| 5708252 |
Excimer laser scanning system |
January 13, 1998 |
| A method for treating an object with a laser including emitting a laser beam from a laser; expanding the laser beam in a first direction; removing a portion of the laser beam though a mask, the portion including at least edges of the expanded laser beam extending in the first direction; |
| 5639344 |
Etching material and etching process |
June 17, 1997 |
| An etching material comprising at least phosphoric acid, acetic acid, and nitric acid, with chromic acid added therein. Also claimed is an etching process using the etching material above, provided that the process comprises selectively etching, by using the solution, an aluminum oxide |
| 5619045 |
Thin film transistor |
April 8, 1997 |
| A thin film transistor comprising a gate electrode offset from source and drain, which comprises a substrate having thereon a gate electrode fabricated on an active region provided on the substrate, wherein, an anodic oxide of the material constituting the gate electrode is provided |
| 5595638 |
Method for manufacturing a semiconductor device utilizing an anodic oxidation |
January 21, 1997 |
| An anodic oxide containing impurities at a low concentration and thereby improved in film quality, and a process for fabricating the same. The process comprises increasing the current between a metallic thin film and a cathode until a voltage therebetween reaches a predetermined value, a |
| 5580800 |
Method of patterning aluminum containing group IIIb Element |
December 3, 1996 |
| A thin film transistor according to this invention has a gate electrode comprising a lower layer of aluminum of a high purity of over 99.5% and an upper layer of aluminum containing over 0.5% silicon. Alternatively, it has a gate electrode made by adding a IIIa group element to a IIIb gr |
| 5576231 |
Process for fabricating an insulated gate field effect transistor with an anodic oxidized gate e |
November 19, 1996 |
| A thin film transistor comprising a gate electrode offset from source and drain, which comprises a substrate having thereon a gate electrode fabricated on an active region provided on the substrate, wherein, an anodic oxide of the material constituting the gate electrode is provided |
| 5541747 |
Electro-optical device utilizing a liquid crystal having a spontaneous polarization |
July 30, 1996 |
| A high-performance liquid crystal display includes a pair of substrates and a liquid crystal cell containing a ferroelectric or antiferroelectric liquid crystal. TFTs or a ferroelectric thin film is formed on one substrate. A given amount of electric charge is supplied into the liquid |
| 5475517 |
Ferroelectric liquid crystal device with angles between smectic layers and the direction normal |
December 12, 1995 |
| A ferroelectric liquid crystal device is described. The device comprises a pair of substrates, an electrode arrangement formed on the inside surface of the substrates, an orientation control surface provided on the inside surface of one of said substrates, and a blended ferroelectric liq |
