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Sudo; Gaku
Kanagawa-ken, JP
No. of patents:

Patent Number Title Of Patent Date Issued
7960769 Solid-state imaging device and method for manufacturing same June 14, 2011
In a CMOS image sensor, an N-type semiconductor layer is formed on a P-type semiconductor substrate. P-type semiconductor regions are formed in one part of the semiconductor layer over the entire length of the thickness direction of the semiconductor layer in a lattice-like shape as

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