| Patent Number |
Title Of Patent |
Date Issued |
| 7604903 |
Mask having sidewall absorbers to enable the printing of finer features in nanoprint lithography |
October 20, 2009 |
| A mask is provided to be used with nanoprint lithography processes to facilitate reproduction of small features required for the production of integrated circuits. A translucent substrate is provided along with one or more three-dimensional features that include one or more vertical |
| 7449348 |
Feedback control of imprint mask feature profile using scatterometry and spacer etchback |
November 11, 2008 |
| The present invention relates generally to photolithographic systems and methods, and more particularly to systems and methodologies that facilitate compensating for retrograde feature profiles on an imprint mask. An aspect of the invention generates feedback information that facilit |
| 7386162 |
Post fabrication CD modification on imprint lithography mask |
June 10, 2008 |
| The present invention relates generally to photolithographic systems and methods, and more particularly to systems and methodologies that facilitate compensating for imprint mask critical dimension error(s). An aspect of the invention generates feedback information that facilitates c |
| 7384569 |
Imprint lithography mask trimming for imprint mask using etch |
June 10, 2008 |
| Disclosed are photolithographic systems and methods, and more particularly systems and methodologies that enhance imprint mask feature resolution. An aspect generates feedback information that facilitates control of imprint mask feature size and resolution via employing a scatterometry |
| 7381278 |
Using supercritical fluids to clean lenses and monitor defects |
June 3, 2008 |
| Disclosed are immersion lithography methods involving irradiating a first photoresist through a lens and an immersion liquid, the immersion liquid contacting the lens and the first photoresist in a first apparatus; contacting the lens with a supercritical fluid in a second apparatus; and |
| 7376259 |
Topography compensation of imprint lithography patterning |
May 20, 2008 |
| The present invention relates generally to photolithographic systems and methods, and more particularly to systems and methodologies that modify an imprint mask. An aspect of the invention generates feedback information that facilitates control of imprint mask feature height via empl |
| 7374654 |
Method of making an organic memory cell |
May 20, 2008 |
| A method of making an organic memory cell which comprises two electrodes with a controllably conductive media between the two electrodes is disclosed. The present invention involves providing a dielectric layer having formed therein one or more first electrode pads; removing a portio |
| 7368225 |
Two mask photoresist exposure pattern for dense and isolated regions |
May 6, 2008 |
| There is provided a method of making plurality of features in a first layer. A photoresist layer is formed over the first layer. Dense regions in the photoresist layer are exposed through a first mask under a first set of illumination conditions. Isolated regions in the photoresist layer |
| 7310155 |
Extraction of tool independent line-edge-roughness (LER) measurements using in-line programmed L |
December 18, 2007 |
| A system that facilitates extraction of line edge roughness measurements that are independent of proprietorship of a metrology device comprises a structure patterned onto silicon with known line edge roughness values associated therewith. A metrology device obtains line edge roughness |
| 7309659 |
Silicon-containing resist to pattern organic low k-dielectrics |
December 18, 2007 |
| The disclosure provides methods to mitigate and/or eliminate problems associated with removal of carbon-based resists from organic low k dielectrics. The methods include forming an organic low k dielectric layer over a semiconductor substrate, forming a capping layer over the organic |
| 7305645 |
Method for manufacturing place & route based on 2-D forbidden patterns |
December 4, 2007 |
| The present invention is directed towards a system and/or methodology that facilitates controlling routing of blocks on a floor plan in an integrated circuit. A pattern collector receives a partially created routing pattern, and a comparing component makes a comparison between the at |
| 7295288 |
Systems and methods of imprint lithography with adjustable mask |
November 13, 2007 |
| Systems and methodologies are provided that account for surface variations of a wafer by adjusting grating features of an imprint lithography mask. Such adjustment employs piezoelectric elements as part of the mask, which can change dimensions (e.g., a height change) and/or move when sub |
| 7289193 |
Frame structure for turbulence control in immersion lithography |
October 30, 2007 |
| Disclosed are systems and methods that employ a structural framework of cell gratings placed on a wafer surface during an immersion lithography process to restrict motion of the immersion fluid. Thus, when the stepper lens comes in contact with the immersion fluid, a typically stable |
| 7262422 |
Use of supercritical fluid to dry wafer and clean lens in immersion lithography |
August 28, 2007 |
| Disclosed are immersion lithography methods and systems involving irradiating a photoresist through a lens and an immersion liquid of an immersion lithography tool, the immersion liquid in an immersion space contacting the lens and the photoresist; removing the immersion liquid from |
| 7262138 |
Organic BARC with adjustable etch rate |
August 28, 2007 |
| Systems and method for adjusting an etch rate of an organic bottom antireflective coating (BARC) layer on a wafer. The BARC layer can be exposed to an energy source at varied intensities to determine a relationship between bake temperature and solubility of the BARC after baking, whi |
| 7251033 |
In-situ reticle contamination detection system at exposure wavelength |
July 31, 2007 |
| A system and method are provided for detecting contaminants or defects on a reticle in-situ. The system and method provide a system that measures the optical transmission through clear areas on a reticle and determines whether the optical transmission of a reticle has been degraded by |
| 7235474 |
System and method for imprint lithography to facilitate dual damascene integration with two impr |
June 26, 2007 |
| A system and method are provided to facilitate dual damascene interconnect integration with two imprint acts. The method provides for creation of a pair of translucent imprint molds containing the dual damascene pattern to be imprinted. The first imprint mold of the pair contains the via |
| 7235414 |
Using scatterometry to verify contact hole opening during tapered bilayer etch |
June 26, 2007 |
| Systems and methods are described that facilitate verifying that bottom apertures in tapered vias are open and free of obstruction. Scatterometry can be employed to monitor tapered via formation during and/or after a dry etch process on a photoresist bilayer. Information regarding critic |
| 7224456 |
In-situ defect monitor and control system for immersion medium in immersion lithography |
May 29, 2007 |
| A system and method for detecting bubbles in a lithographic immersion medium and for controlling a lithographic process based at least in part on the detection of bubbles is provided. A bubble monitoring component emits an incident beam that passes through the immersion medium and is |
| 7221060 |
Composite alignment mark scheme for multi-layers in lithography |
May 22, 2007 |
| Systems and/or methods are disclosed for aligning multiple layers of a multi-layer semiconductor device fabrication process and/or system utilizing a composite alignment mark. A component is provided to form the composite alignment mark, such that a first portion of the composite ali |
| 7187796 |
Systems and methods that employ exposure compensation to provide uniform CD control on reticle d |
March 6, 2007 |
| The present invention relates to monitoring and controlling a reticle fabrication process (e.g. employed with an electron beam lithography process). A typical fabrication process involves discrete stages including exposure, post-exposure bake and development. After fabrication is com |
| 7158896 |
Real time immersion medium control using scatterometry |
January 2, 2007 |
| Systems and/or methods are disclosed for measuring and/or controlling an amount of impurity that is dissolved within an immersion medium employed with immersion lithography. The impurity can be photoresist from a photoresist layer coated upon a substrate surface. A known grating stru |
| 7156925 |
Using supercritical fluids to clean lenses and monitor defects |
January 2, 2007 |
| Disclosed are immersion lithography methods involving irradiating a first photoresist through a lens and an immersion liquid, the immersion liquid contacting the lens and the first photoresist in a first apparatus; contacting the lens with a supercritical fluid in a second apparatus; and |
| 7115440 |
SO.sub.2 treatment of oxidized CuO for copper sulfide formation of memory element growth |
October 3, 2006 |
| Disclosed are methods of making memory cells and semiconductor devices containing the memory cells. The methods involve oxidizing a portion of a copper containing electrode to form a copper oxide layer; contacting the copper oxide layer with at least one of a sulfur containing gas or pla |
| 7109046 |
Surface oxide tabulation and photo process control and cost savings |
September 19, 2006 |
| The present invention relates generally to semiconductor processing, and more particularly to methods and systems for reducing costs of wafer production by analyzing key aspects of wafer status to determine whether to initiate corrective measures to salvage a wafer at an early stage and |
| 7084988 |
System and method for creation of semiconductor multi-sloped features |
August 1, 2006 |
| A system and method for monitoring the creation of semiconductor features with multi-slope profiles by employing scatterometry is provided. The system includes a wafer partitioned into one or more portions and one or more light sources, each light source directing light to one or more |
| 7079975 |
Scatterometry and acoustic based active control of thin film deposition process |
July 18, 2006 |
| A system for monitoring and controlling the deposition of thin films employed in semiconductor fabrication is provided. The system includes one or more acoustic and/or ultrasonic wave sources, each source directing waves onto one or more thin films deposited on a wafer. Waves reflect |
| 7076320 |
Scatterometry monitor in cluster process tool environment for advanced process control (APC) |
July 11, 2006 |
| Systems and methods that improve process control in semiconductor manufacturing are disclosed. According to an aspect of the invention, conditions in a cluster tool environment and/or a wafer therein can be monitored in-situ via, for example, a scatterometry system, to determine whet |
| 7065427 |
Optical monitoring and control of two layers of liquid immersion media |
June 20, 2006 |
| A multi-layer immersion medium monitoring system for a lithographic process monitors characteristics of an immersion medium of a semiconductor manufacturing process. The multi-layer immersion medium includes at least a first liquid of a first density (or viscosity) and a second liqui |
| 7064846 |
Non-lithographic shrink techniques for improving line edge roughness and using imperfect (but si |
June 20, 2006 |
| The present invention relates generally to photolithographic systems and methods, and more particularly to systems and methodologies that facilitate the reduction of line-edge roughness (LER) and/or standing wave expression during pattern line formation in an integrated circuit. Syst |
| 7056804 |
Shallow trench isolation polish stop layer for reduced topography |
June 6, 2006 |
| A method of making and shallow trench isolation feature including 1) providing a semiconductor substrate, 2) forming a polish stop layer over the semiconductor substrate, 3) forming a nitride containing layer over the polish stop layer, 4) forming a shallow trench layer through a por |
| 7052921 |
System and method using in situ scatterometry to detect photoresist pattern integrity during the |
May 30, 2006 |
| The present invention uses in situ scatterometry to determine if a defect (e.g., photoresist erosion, photoresist bending and pattern collapse) is present on a wafer. In one embodiment, in situ scatterometry is used to detect a pattern integrity defect associated with the layer of ph |
| 7052575 |
System and method for active control of etch process |
May 30, 2006 |
| A system for regulating an etch process is provided. The system includes one or more light sources, each light source directing light to one or more features and/or gratings on a wafer. Light reflected from the features and/or gratings is collected by a measuring system, which proces |
| 7018922 |
Patterning for elongated V.sub.SS contact flash memory |
March 28, 2006 |
| A method of forming a contact in a flash memory device is disclosed. The method increases the depth of focus margin and the overlay margin between the contact and the stacked gate layers. A plurality of stacked gate layers are formed on a semiconductor substrate, wherein each stacked gat |
| 7015504 |
Sidewall formation for high density polymer memory element array |
March 21, 2006 |
| Systems and methodologies are disclosed for increasing the number of memory cells associated with a lithographic feature. The systems comprise memory elements that are formed on the sidewalls of the lithographic feature by employing various depositing and etching processes. The side |
| 7008832 |
Damascene process for a T-shaped gate electrode |
March 7, 2006 |
| A damascene process can be utilized to form a T-shaped gate. A silicon rich nitride or SiON layer can be etched to form a first aperture. An oxide layer can be provided above the silicon rich nitride layer or SiON layer. A second aperture or trench can be provided in the oxide layer. |
| 6999254 |
Refractive index system monitor and control for immersion lithography |
February 14, 2006 |
| A system and/or method are disclosed for measuring and/or controlling refractive index (n) and/or lithographic constant (k) of an immersion medium utilized in connection with immersion lithography. A known grating structure is built upon a substrate. A refractive index monitoring com |
| 6982043 |
Scatterometry with grating to observe resist removal rate during etch |
January 3, 2006 |
| Disclosed are a system and method for monitoring a patterned photoresist clad-wafer structure undergoing an etch process. The system includes a semiconductor wafer structure comprising a substrate, one or more intermediate layers overlying the substrate, and a first patterned photore |
| 6972201 |
Using scatterometry to detect and control undercut for ARC with developable BARCs |
December 6, 2005 |
| Architecture for monitoring a bottom anti-reflective coating (BARC) undercut and residual portions thereof during a development stage using scatterometry. The scatterometry system monitors for BARC undercut and residual BARC material, and if detected, controls the process to minimize |
| 6954678 |
Artificial intelligence system for track defect problem solving |
October 11, 2005 |
| A system and method facilitating lithography defect solution generation is provided. The invention includes a defect solution component and a defect alert component. The defect solution component provides potential solution(s) to a defect within the lithography process utilizing arti |
| 6936545 |
Organic memory cell formation on Ag substrate |
August 30, 2005 |
| Systems and methods are disclosed for creating memory cells on a silver interconnect substrate. The silver substrate is initially subject to a CMP process followed by cycles of exposure to inorganic and organic acids, as well as growing Ag/Ag.sub.2 S layers. The resulting smooth Ag inter |
| 6934032 |
Copper oxide monitoring by scatterometry/ellipsometry during nitride or BLOK removal in damascen |
August 23, 2005 |
| A system and methodology for monitoring and/or controlling a semiconductor fabrication process is disclosed. Scatterometry and/or ellipsometry based techniques can be employed to facilitate providing measurement signals during a damascene phase of the fabrication process. The thickness o |
| 6931618 |
Feed forward process control using scatterometry for reticle fabrication |
August 16, 2005 |
| A system for selectively generating and feeding forward reticle fabrication data is provided. The system includes components for fabricating a reticle and a control system operatively connected to the fabricating components, where the control system can control the operation of the fabri |
| 6915177 |
Comprehensive integrated lithographic process control system based on product design and yield f |
July 5, 2005 |
| The present invention provides systems and methods that facilitate performing fabrication process. Critical parameters are valued collectively as a quality matrix, which weights respective parameters according to their importance to one or more design goals. The critical parameters a |
| 6912438 |
Using scatterometry to obtain measurements of in circuit structures |
June 28, 2005 |
| A system and methodology are disclosed for monitoring and controlling a semiconductor fabrication process. Measurements are taken in accordance with scatterometry based techniques of repeating in circuit structures that evolve on a wafer as the wafer undergoes the fabrication process. Th |
| 6900124 |
Patterning for elliptical Vss contact on flash memory |
May 31, 2005 |
| A method of forming a contact in a flash memory device is disclosed. The method increases the depth of focus margin and the overlay margin between the contact and the stacked gate layers. A plurality of stacked gate layers are formed on a semiconductor substrate, wherein each stacked gat |
| 6879406 |
Use of scatterometry as a control tool in the manufacture of extreme UV masks |
April 12, 2005 |
| One aspect of the present invention relates to a system and method for controlling an EUV mask fabrication process using a scatterometer. The system includes an EUV mask fabrication system comprising a translucent substrate having one or more layers of reflective material formed thereon |
| 6878961 |
Photosensitive polymeric memory elements |
April 12, 2005 |
| A method of making organic memory cells made of two electrodes with a controllably conductive media between the two electrodes is disclosed. The controllably conductive media contains an organic semiconductor layer that contains a photosensitive compound. The organic semiconductor layer |
| 6878560 |
Fab correlation system |
April 12, 2005 |
| A system comprised of a plurality of fabs that are operatively coupled and share data from a common framework for correlating production. The fabs can be coupled via Internet, cellular, optical, landline, microwave and satellite communication means and the like. Data can be transferred t |
| 6869888 |
E-beam flood exposure of spin-on material to eliminate voids in vias |
March 22, 2005 |
| A method for forming a semiconductor device is described. The method comprises forming a first layer over a semiconductor substrate. At least one hole is formed through the first layer. A bottom anti-reflective coating (BARC) layer is formed in the at least one hole. The BARC layer is |
