| Patent Number |
Title Of Patent |
Date Issued |
| 7432197 |
Methods of patterning photoresist, and methods of forming semiconductor constructions |
October 7, 2008 |
| The invention includes semiconductor constructions containing optically saturable absorption layers. An optically saturable absorption layer can be between photoresist and a topography, with the topography having two or more surfaces of differing reflectivity relative to one another. The |
| 7401010 |
Methods of forming radiation-patterning tools; carrier waves and computer readable media |
July 15, 2008 |
| The invention includes a method for placement of sidelobe inhibitors on a radiation-patterning tool. Elements of the tool are represented by design features in a modeling domain. The modeling domain is utilized to generate vectors spanning between edges of design features within a th |
| 7350182 |
Methods of forming patterned reticles |
March 25, 2008 |
| The invention includes methods of forming patterned reticles. Design features can be introduced into a layout for a reticle prior to optical proximity correction, and then removed prior to taping a pattern onto the reticle. Design features can alternatively, or additionally, be intro |
| 7283205 |
Optimized optical lithography illumination source for use during the manufacture of a semiconduc |
October 16, 2007 |
| A method and structure for optimizing an optical lithography illumination source may include a shaped diffractive optical element (DOE) interposed between the illuminator and a lens during the exposure of a photoresist layer over a semiconductor wafer. The DOE may, in some instances, |
| 7282666 |
Method and apparatus to increase throughput of processing using pulsed radiation sources |
October 16, 2007 |
| A material processing system and method is disclosed for processing materials such as amorphous silicon in an annealing processes and lithography processes on a silicon wafer, as well as ablation processes. A first laser generates periodic pulses of radiation along a beam path direct |
| 7276315 |
Methods for generating or designing sidelobe inhibitors for radiation patterning tools |
October 2, 2007 |
| Design methods and a computer-readable medium having computer-executable instructions thereon for sidelobe suppression in a radiation-patterning tool or mask. Sidelobe artifacts are mitigated by identifying elements as a function of the radiation wavelength for forming desired profiles o |
| 7273684 |
Mask having transmissive elements and a common sidelobe inhibitor for sidelobe suppression in ra |
September 25, 2007 |
| A mask having transmissive elements and one or more sidelobe inhibitors for sidelobe suppression during a radiation-patterning process is provided. Sidelobe artifacts are mitigated by identifying elements as a function of the radiation wavelength for forming desired profiles on a sem |
| 7229724 |
Reticles and methods of forming and using the same |
June 12, 2007 |
| Reticles having reticle patterns suitable for reducing edge of array effects are provided. The reticle patterns have unresolvable patterns formed in the periphery areas of the reticle patterns. The unresolvable patterns are non-transparent with respect to patterning radiation. System |
| 7226707 |
Methods of printing structures |
June 5, 2007 |
| The invention encompasses a radiation-patterning tool. The tool is configured to be utilized to print a pair of structures in a radiation-sensitive material. The tool includes two separate and discrete features, with one of the features corresponding to one of the structures of the p |
| 7130022 |
Methods and systems for controlling radiation beam characteristics for microlithographic process |
October 31, 2006 |
| Methods and apparatuses for controlling characteristics of radiation directed to a microlithographic workpiece are disclosed. An apparatus in accordance with one embodiment of the invention includes a source of radiation positioned to direct a radiation beam having an amplitude distr |
| 7107572 |
Methods of forming patterned reticles |
September 12, 2006 |
| The invention includes methods of forming patterned reticles. Design features can be introduced into a layout for a reticle prior to optical proximity correction, and then removed prior to taping a pattern onto the reticle. Design features can alternatively, or additionally, be intro |
| 7105278 |
Pattern mask with features to minimize the effect of aberrations |
September 12, 2006 |
| A semiconductor pattern mask that might otherwise exhibit three-fold symmetry, which could give rise to distorted semiconductor features in the presence of three-leaf aberration in the optical system used to expose a semiconductor wafer through the mask, is altered to break up the th |
| 7093227 |
Methods of forming patterned reticles |
August 15, 2006 |
| The invention includes methods of forming patterned reticles. Design features can be introduced into a layout for a reticle prior to optical proximity correction, and then removed prior to taping a pattern onto the reticle. Design features can alternatively, or additionally, be intro |
| 7086031 |
Methods of forming patterned reticles |
August 1, 2006 |
| The invention includes methods of forming patterned reticles. Design features can be introduced into a layout for a reticle prior to optical proximity correction, and then removed prior to taping a pattern onto the reticle. Design features can alternatively, or additionally, be intro |
| 7073161 |
Methods of forming patterned reticles |
July 4, 2006 |
| The invention includes methods of forming patterned reticles. Design features can be introduced into a layout for a reticle prior to optical proximity correction, and then removed prior to taping a pattern onto the reticle. Design features can alternatively, or additionally, be intro |
| 7046339 |
Optimized optical lithography illumination source for use during the manufacture of a semiconduc |
May 16, 2006 |
| A method and structure for optimizing an optical lithography illumination source comprises a shaped diffractive optical element (DOE) interposed between the illuminator and a lens during the exposure of a photoresist layer over a semiconductor wafer. The DOE may, in some instances, i |
| 7008738 |
Microlithographic structures and method of fabrication |
March 7, 2006 |
| A method of formulating and fabricating a mask pattern and resulting mask for forming isolated or closely spaced contact holes in an integrated circuit. The mask has a transparent mask substrate and patterned regions of attenuating phase shift material and opaque, partially transmissive |
| 6911301 |
Methods of forming aligned structures with radiation-sensitive material |
June 28, 2005 |
| The invention encompasses a radiation-patterning tool. The tool is configured to be utilized to print a pair of structures in a radiation-sensitive material. The tool includes two separate and discrete features, with one of the features corresponding to one of the structures of the p |
| 6894765 |
Methods and systems for controlling radiation beam characteristics for microlithographic process |
May 17, 2005 |
| Methods and apparatuses for controlling characteristics of radiation directed to a microlithographic workpiece are disclosed. An apparatus in accordance with one embodiment of the invention includes a source of radiation positioned to direct a radiation beam having an amplitude distr |
| 6887629 |
Radiation-patterning tool |
May 3, 2005 |
| The invention encompasses a radiation-patterning tool. The tool is configured to be utilized to print a pair of structures in a radiation-sensitive material. The tool includes two separate and discrete features, with one of the features corresponding to one of the structures of the p |
| 6854106 |
Reticles and methods of forming and using the same |
February 8, 2005 |
| Reticles having reticle patterns suitable for reducing edge of array effects are provided. The reticle patterns may have sub-resolution patterns or a transmissive block fill formed in the periphery areas of the reticle patterns. Systems incorporating the reticles are also provided. A |
| 6842889 |
Methods of forming patterned reticles |
January 11, 2005 |
| The invention includes methods of forming patterned reticles. Design features can be introduced into a layout for a reticle prior to optical proximity correction, and then removed prior to taping a pattern onto the reticle. Design features can alternatively, or additionally, be introduce |
| 6818910 |
Writing methodology to reduce write time, and system for performing same |
November 16, 2004 |
| The present invention is generally directed to various reticle writing methodologies to reduce write time, and a system for performing same. In one illustrative embodiment, the method comprises exposing a layer of photoresist in accordance with a first writing pattern in a first area of |
| 6818359 |
Reticles and methods of forming and using the same |
November 16, 2004 |
| Reticles having reticle patterns suitable for reducing edge of array effects are provided. The reticle patterns may have transmission patterns etched in the periphery areas of the reticle patterns. Systems incorporating the reticles are also provided. Additionally, methods of forming |
| 6807519 |
Methods of forming radiation-patterning tools; carrier waves and computer readable media |
October 19, 2004 |
| The invention includes a method for placement of sidelobe inhibitors on a radiation-patterning tool. Elements of the tool are represented by design features in a modeling domain. The modeling domain is utilized to generate vectors spanning between edges of design features within a thresh |
| 6803157 |
Pattern mask with features to minimize the effect of aberrations |
October 12, 2004 |
| A semiconductor pattern mask that might otherwise exhibit three-fold symmetry, which could give rise to distorted semiconductor features in the presence of three-leaf aberration in the optical system used to expose a semiconductor wafer through the mask, is altered to break up the th |
| 6803155 |
Microlithographic device, microlithographic assist features, system for forming contacts and oth |
October 12, 2004 |
| A method of formulating and fabricating a mask pattern and resulting mask for forming isolated or closely spaced contact holes in an integrated circuit. The mask has a transparent mask substrate and patterned regions of attenuating phase shift material and opaque, partially transmissive |
| 6753617 |
Method for improving a stepper signal in a planarized surface over alignment topography |
June 22, 2004 |
| A method and resulting structure for reducing refraction and reflection occurring at the interface between adjacent layers of different materials in a semiconductor device, assembly or laminate during an alignment step in a semiconductor device fabrication process. The method comprises |
| 6746824 |
Reticle design for alternating phase shift mask |
June 8, 2004 |
| The present invention provides a method and apparatus for producing 0 degree light and 180 degree phase shifted light having substantially equal intensities as both lights exit an alternating phase shift reticle. A material is inserted within the etched portion of the 180 degree phase |
| 6737200 |
Method for aligning a contact or a line to adjacent phase-shifter on a mask |
May 18, 2004 |
| A method for fabricating a mask which includes a printable contact and/or line area which is aligned with a phase-shifter. The method includes preparing a mask-in-process comprising a substrate underlying a first layer, an opaque layer overlying the first layer, and a first resist ma |
| 6524751 |
Reticle design for alternating phase shift mask |
February 25, 2003 |
| The present invention provides a method and apparatus for producing 0 degree light and 180 degree phase shifted light having substantially equal intensities as both lights exit an alternating phase shift reticle. A material is inserted within the etched portion of the 180 degree phase |
| 6501188 |
Method for improving a stepper signal in a planarized surface over alignment topography |
December 31, 2002 |
| A method and resulting structure for reducing refraction and reflection occurring at the interface between adjacent layers of different materials in a semiconductor device, assembly or laminate during an alignment step in a semiconductor device fabrication process. The method comprises |
| 6447961 |
Optical proximity correction methods, and methods forming radiation-patterning tools |
September 10, 2002 |
| The invention encompasses an optical proximity correction method. A substrate is provided which is to be formed into a radiation-patterning tool. A first dataset is provided to define a first radiation masking pattern for a first part of the tool, and a second dataset is provided to |
| 6413684 |
Method to eliminate side lobe printing of attenuated phase shift masks |
July 2, 2002 |
| The present invention provides a method of reducing side lobe printing using an attenuated phase shift mask that is designed to diminish the background of the attenuating portions that would otherwise be associated with a side lobe. The present invention reduces the magnitude of the side |
| 6401236 |
Method to eliminate side lobe printing of attenuated phase shift |
June 4, 2002 |
| A computer implemented method that uses a full integrated circuit (IC) chip design, to be printed by an attenuated phase shift mask, as an input parameter. Each feature environment within the input full IC chip design is individually simulated to determine how the features within the |
| 6245468 |
Optical proximity correction methods, and methods of forming radiation-patterning tools |
June 12, 2001 |
| The invention encompasses an optical proximity correction method. A substrate is provided which is to be formed into a radiation-patterning tool. A first dataset is provided to define a first radiation masking pattern for a first part of the tool, and a second dataset is provided to |
| 6242816 |
Method for improving a stepper signal in a planarized surface over alignment topography |
June 5, 2001 |
| A method and resulting structure for reducing refraction and reflection occurring at the interface between adjacent layers of different materials in a semiconductor device, assembly or laminate during an alignment step in a semiconductor device fabrication process. The method comprises |
| 6214497 |
Method to eliminate side lobe printing of attenuated phase shift masks |
April 10, 2001 |
| The present invention provides a method of reducing side lobe printing using an attenuated phase shift mask that is designed to diminish the background of the attenuating portions that would otherwise be associated with a side lobe. The present invention reduces the magnitude of the side |
| 6144109 |
Method for improving a stepper signal in a planarized surface over alignment topography |
November 7, 2000 |
| A method and resulting structure for reducing refraction and reflection occurring at the interface between adjacent layers of different materials in a semiconductor device, assembly or laminate during an alignment step in a semiconductor device fabrication process. The method comprises |
