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Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Spinelli; Luis A.
Address:
Sunnyvale, CA
No. of patents:
39
Patents:












Patent Number Title Of Patent Date Issued
7843479 Method for providing a plurality of laser-printed labels from a medium supported on a disc November 30, 2010
A method of printing labels includes supporting a laser sensitive material on a disc and printing label images on the disc with a modulated focused beam from a diode-laser. The label images may be printed in regions of the medium having pre-cut label boundaries. Alternatively, label
7738515 Quasi-CW UV laser with low peak pulse-power June 15, 2010
Laser apparatus is disclosed in which fundamental-wavelength optical pulses delivered from a mode-locked laser resonator at a pulse-repetition frequency (PRF) are converted to harmonic-wavelength pulses in an optical delay loop. One example is disclosed in which the harmonic-wavelength
7724785 Multiple pulsed-laser system for silicon crystallization May 25, 2010
Multiple laser resonators share a common acousto-optic Q-switch. The Q-switch is driven by a radio-frequency (RF) transducer that causes an acoustic wave to propagate in the Q-switch. Turning off the RF transducer discontinues propagation of the acoustic wave and causes each of the l
7697207 High power and high brightness diode-laser array for material processing applications April 13, 2010
Arrangements for combination and fast-axis alignment of fast-axes of diode-laser beams are disclosed. Alignment arrangements include providing each diode-laser with a corresponding alignable fast-axis collimating lens, providing individually alignable mirrors for steering an re-orien
7643530 High-power external-cavity optically-pumped semiconductor lasers January 5, 2010
External-cavity optically-pumped semiconductor lasers (OPS-lasers) including an OPS-structure having a mirror-structure surmounted by a surface-emitting, semiconductor multilayer (periodic) gain-structure are disclosed. The gain-structure is pumped by light from diode-lasers. The OPS
7633562 Laser illuminated projection displays December 15, 2009
A projection video display includes a light source including an OPS-laser delivering laser radiation in multiple transverse modes (a multiple-transverse-mode OPS-laser). The display includes a spatial light modulator for spatially modulating the radiation from the multiple-transverse
7593440 MOPA laser apparatus with two master oscillators for generating ultraviolet radiation September 22, 2009
Laser apparatus including two different, pulsed MOPAs, one having a fundamental wavelength of 1064 nm and the other having a fundamental wavelength of 1564 nm, provide trains of optical pulses. The 1064-nm pulses are frequency tripled to 355 nm and the 1564-nm pulses are frequency do
7463657 Intracavity frequency-tripled CW laser December 9, 2008
A method of intracavity frequency conversion in a CW laser includes causing fundamental radiation to circulate in a laser resonator. The fundamental radiation makes a first pass through an optically nonlinear crystal where a fraction of the fundamental radiation generates second-harm
7447245 Optically pumped semiconductor laser pumped optical parametric oscillator November 4, 2008
An optically pumped semiconductor pumped optical parametric oscillator (OPS-pumped OPO) includes an OPS laser resonator and an OPO resonator A portion the OPS laser resonator axis and the OPO resonator axis are collinear. An optically nonlinear crystal is located in the coaxial porti
7413311 Speckle reduction in laser illuminated projection displays having a one-dimensional spatial ligh August 19, 2008
A projection display including a one-dimensional light modulator includes an optical arrangement for projecting light from a laser onto the modulator in the form of a line of light. Light from the laser is divided to create in effect a two-dimensional array of mutually incoherent light
7411989 Mechanically Q-switched CO.sub.2 laser August 12, 2008
A CO.sub.2 laser has a resonator mirror that oscillates about an axis perpendicular to the resonator axis through an angular range of oscillation sufficient that the resonator is only able to deliver radiation for a fraction of an oscillation period of the mirror. In one example of t
7403550 Quasi-CW UV laser with low peak pulse-power July 22, 2008
An in vivo screening assay for identifying an agent that interferes with T cell activation and/or -differentiation and/or modulation of other inflammatory effector cells.
7400658 Quasi-CW UV laser with low peak pulse-power July 15, 2008
Laser apparatus is disclosed in which fundamental-wavelength optical pulses delivered from a mode-locked laser resonator at a pulse-repetition frequency (PRF) are converted to harmonic-wavelength pulses in an optical delay loop. One example is disclosed in which the harmonic-wavelength
7355657 Laser illuminated projection displays April 8, 2008
A projection video display includes a light source including an OPS-laser delivering laser radiation in multiple transverse modes (a multiple-transverse-mode OPS-laser). The display includes a spatial light modulator for spatially modulating the radiation from the multiple-transverse
7244028 Laser illuminated projection displays July 17, 2007
A projection video display includes at least one laser for delivering a light beam. The display includes a beam homogenizer and a condenser lens. A scanning arrangement is provided for scanning the light in beam in a particular pattern over the condenser lens in a manner that effectively
7184216 Optical pulse duration extender February 27, 2007
An optical pulse extender includes a delay loop formed by a plurality of mirrors and a graded reflectivity beamsplitter. The mirrors and the beamsplitter are configured and aligned such that a pulse to be broadened makes a predetermined number of round trips in the delay loop and is
7180928 High-power external-cavity optically-pumped semiconductor lasers February 20, 2007
External-cavity optically-pumped semiconductor lasers (OPS-lasers) including an OPS-structure having a mirror-structure surmounted by a surface-emitting, semiconductor multilayer (periodic) gain-structure are disclosed. The gain-structure is pumped by light from diode-lasers. The OPS
7136408 InGaN diode-laser pumped II-VI semiconductor lasers November 14, 2006
A semiconductor laser includes a multilayer semiconductor laser heterostructure including at least one active layer of a II-VI semiconductor material and is optically pumped by one or more indium gallium nitride (InGaN) diode-lasers. Group II elements in the II-VI semiconductor mater
7130321 Intracavity frequency-tripled CW laser with traveling-wave ring-resonator October 31, 2006
A traveling-wave ring laser resonator includes one or more gain-elements for generating fundamental radiation and three optically nonlinear crystals. A portion of the fundamental radiation is converted to second-harmonic radiation in a first of the crystals. Remaining fundamental rad
7035012 Optical pulse duration extender April 25, 2006
An optical pulse extender includes a delay loop formed by a plurality of mirrors and a graded reflectivity beamsplitter. The mirrors and the beamsplitter are configured and aligned such that a pulse to be broadened makes a predetermined number of round trips in the delay loop and is
6683901 High-power external-cavity optically-pumped semiconductor lasers January 27, 2004
External-cavity optically-pumped semiconductor lasers (OPS-lasers) including an OPS-structure having a mirror-structure surmounted by a surface-emitting, semiconductor multilayer (periodic) gain-structure are disclosed. The gain-structure is pumped by light from diode-lasers. The OPS
6590911 Passively modelocked harmonic-generating laser July 8, 2003
A laser includes a resonator terminated by first and second mirrors and including a gain medium providing fundamental radiation. A first optically-nonlinear element is located in the resonator. The first optically-nonlinear element is cooperatively arranged with the first mirror to p
6574255 High-power external-cavity optically-pumped semiconductor lasers June 3, 2003
External cavity optically-pumped semiconductor lasers (OPS-lasers) including an OPS-structure having a mirror-structure surmounted by a surface-emitting, semiconductor multilayer (periodic) gain-structure are disclosed. The gain-structure in pumped by light from diode-lasers. The OPS
6567434 CW far-UV laser system with two active resonators May 20, 2003
A laser system includes a travelling-wave active laser-resonator arranged for generating laser-radiation having a first wavelength and arranged such that the first-wavelength radiation circulates in only one direction therein. An optically-nonlinear element is positioned in the trave
6526073 CW far-UV laser system with two active resonators February 25, 2003
A laser system includes a travelling-wave active laser-resonator arranged for generating laser-radiation having a first wavelength and arranged such that the first-wavelength radiation circulates in only one direction therein. An optically-nonlinear element is positioned in the trave
6507593 Step-tunable external-cavity surface-emitting semiconductor laser January 14, 2003
A laser for delivering laser radiation at a selected one of a plurality of equally-spaced frequencies extending over a frequency range includes a laser resonator defined by two end mirrors. The resonator includes a surface-emitting semiconductor multilayer gain-structure in optical c
6438153 High-power external-cavity optically-pumped semiconductor lasers August 20, 2002
External-cavity optically-pumped semiconductor lasers (OPS-lasers) including an OPS-structure having a mirror-structure surmounted by a surface-emitting, semiconductor multilayer (periodic) gain-structure are disclosed. The gain-structure is pumped by light from diode-lasers. The OPS
6370168 Intracavity frequency-converted optically-pumped semiconductor laser April 9, 2002
An intracavity, frequency-doubled, external-cavity, optically-pumped semiconductor laser in accordance with the present invention includes a semiconductor multilayer surface-emitting gain-structure surmounting a Bragg mirror. An external concave mirror and the Bragg-mirror define a s
6298076 High-power external-cavity optically-pumped semiconductor lasers October 2, 2001
External-cavity optically-pumped semiconductor lasers (OPS-lasers) including an OPS-structure having a mirror-structure surmounted by a surface-emitting, semiconductor multilayer (periodic) gain-structure are disclosed. The gain-structure is pumped by light from diode-lasers. The OPS
6285702 High-power external-cavity optically-pumped semiconductor laser September 4, 2001
External-cavity optically-pumped semiconductor lasers (OPS-lasers) including an OPS-structure having a mirror-structure surmounted by a surface-emitting, semiconductor multilayer (periodic) gain-structure are disclosed. The gain-structure is pumped by light from diode-lasers. The OPS
6198756 CW far-UV laser system with two active resonators March 6, 2001
A laser system includes two separate active laser-resonators. A first of the laser-resonators delivers laser-radiation at a first wavelength, and the second generates fundamental laser-radiation at second wavelength. The second resonator includes an optically-nonlinear crystal. The radia
6167068 Intracavity frequency-converted optically-pumped semiconductor laser December 26, 2000
An intracavity, frequency-doubled, external-cavity, optically-pumped semiconductor laser in accordance with the present invention includes a monolithic surface-emitting semiconductor layer structure including a Bragg mirror portion and a gain portion. An external mirror and the Bragg
6097742 High-power external-cavity optically-pumped semiconductor lasers August 1, 2000
External-cavity optically-pumped semiconductor lasers (OPS-lasers) including an OPS-structure having a mirror-structure surmounted by a surface-emitting, semiconductor multilayer (periodic) gain-structure are disclosed. The gain-structure is pumped by light from diode-lasers. The OPS
5991318 Intracavity frequency-converted optically-pumped semiconductor laser November 23, 1999
An intracavity, frequency-doubled, external-cavity, optically-pumped semiconductor laser in accordance with the present invention includes a monolithic surface-emitting semiconductor layer structure including a Bragg mirror portion and a gain portion. An external mirror and the Bragg
5912912 Repetitively-pulsed solid-state laser having resonator including multiple different gain-media June 15, 1999
A continuously-pumped, repetitively-pulsed, Q-switched laser resonator includes two different gain-media which lase at about the same wavelength. By separately and variably pumping the different gain-media, the laser resonator can efficiently generate output radiation having parameters
5163059 Mode-locked laser using non-linear self-focusing element November 10, 1992
A passively mode-locked laser (110) is disclosed that includes a resonant cavity (112, 114) having a gain medium (116) therein. A transmissive element (116), which may be the gain medium, is also located in the cavity and is formed from a material which varies the two-dimensional, latera
5097471 Mode-locked laser using non-linear self-focusing element March 17, 1992
A passively mode-locked laser (110) is disclosed that includes a resonant cavity (112, 114) having a gain medium (116) therein. A transmissive element (116), which may be the gain medium, is also located in the cavity and is formed from a material which varies the two-dimensional, latera
5079772 Mode-locked laser using non-linear self-focusing element January 7, 1992
A passively mode-locked laser (110) is disclosed that includes a resonant cavity (112, 114) having a gain medium (116) therein. A transmissive element (116), which may be the gain medium, is also located in the cavity and is formed from a material which varies the two-dimensional, latera
5040182 Mode-locked laser August 13, 1991
Mode-locked pulsed output is induced in a laser by introducing a varying frequency dependent loss in the cavity. The varying, frequency dependent loss allows a large number of longitudinal modes to oscillate. In one of the preferred embodiments of the subject invention, the varying frequ










 
 
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