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Inventor: Sorada; Haruyuki
Address: Osaka, JP
No. of patents: 5
Patents:
| Patent Number |
Title Of Patent |
Date Issued |
| 7554139 |
Semiconductor manufacturing method and semiconductor device |
June 30, 2009 |
| A production method for a semiconductor device according to the present invention includes: step (A) of providing a substrate including a semiconductor layer having a principal face, the substrate having a device isolation structure (STI) formed in an isolation region 70 for partitio |
| 7145168 |
Semiconductor device |
December 5, 2006 |
| On an Si substrate 1, a buffer layer 2, a SiGe layer 3, and an Si cap layer 4 are formed. A mask is formed on the substrate, and then the substrate is patterned. In this manner, a trench 7a is formed so as to reach the Si substrate 1 and have the side faces of the SiGe layer 3 expose |
| 6861316 |
Semiconductor device and method for fabricating the same |
March 1, 2005 |
| On an Si substrate 1, a buffer layer 2, a SiGe layer 3, and an Si cap layer 4 are formed. A mask is formed on the substrate, and then the substrate is patterned. In this manner, a trench 7a is formed so as to reach the Si substrate 1 and have the side faces of the SiGe layer 3 exposed. T |
| 6740928 |
Semiconductor device |
May 25, 2004 |
| The semiconductor device of the present invention includes: particles or interface states for passing charge formed on a p-type silicon substrate via a barrier layer; and particles for holding charge formed above the charge-passing particles via another barrier layer. The charge-holding |
| 6548825 |
Semiconductor device including barrier layer having dispersed particles |
April 15, 2003 |
| The semiconductor device of the present invention includes: particles or interface states for passing charge formed on a p-type silicon substrate via a barrier layer; and particles for holding charge formed above the charge-passing particles via another barrier layer. The charge-holding |
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