| Patent Number |
Title Of Patent |
Date Issued |
| 7582536 |
Electronic device with reduced interface charge between epitaxially grown layers and a method fo |
September 1, 2009 |
| An electronic device contains a substrate, a sub-collector supported by the substrate, an un-doped layer having a selectively implanted buried sub-collector and supported by the sub-collector, an As-based nucleation layer partially supported by the un-doped layer, a collector layer s |
| 7576409 |
Group III-V compound semiconductor based heterojuncton bipolar transistors with various collecto |
August 18, 2009 |
| A wafer comprising at least one high F.sub.t HBT and at least one high BVceo HBT having various collector profiles on a common III-V compound semiconductor based wafer. The N+ implant in the collector varies the collector profiles of individual HBTs on the wafer. The method for prepa |
| 7531851 |
Electronic device with reduced interface charge between epitaxially grown layers and a method fo |
May 12, 2009 |
| An electronic device contains a substrate, a sub-collector supported by the substrate, an un-doped layer having a selectively implanted buried sub-collector and supported by the sub-collector, an As-based nucleation layer partially supported by the un-doped layer, a collector layer s |
| 7470619 |
Interconnect with high aspect ratio plugged vias |
December 30, 2008 |
| Described is a method for forming a stackable interconnect. The interconnect is formed by depositing a first contact on a substrate; depositing a seed layer (SL) on the substrate; depositing a metal mask layer (MML) on the SL; depositing a bottom anti-reflection coating (BARC) on the |
| 7176542 |
Photo induced-EMF sensor shield |
February 13, 2007 |
| A photo-EMF detector including a shield to prevent a portion of the detector from illumination. The shield prevents the generation of unwanted noise-currents, thus increasing the performance of the photo-EMF detector. |
| 5502325 |
Integrated magnetoresistive sensor |
March 26, 1996 |
| A magnetoresistor is monolithically integrated with an active circuit by growing a thin film magnetoresistor on a semiconductor substrate after the substrate has been doped and annealed for the active devices. The magnetoresistor is grown through a window in a mask, with the mask and |
| 5486804 |
Integrated magnetoresistive sensor fabrication method and apparatus |
January 23, 1996 |
| A magnetoresistor is monolithically integrated with an active circuit by growing a thin film magnetoresistor on a semiconductor substrate after the substrate has been doped and annealed for the active devices. The magnetoresistor is grown through a window in a mask, with the mask and |
| 5471077 |
High electron mobility transistor and methode of making |
November 28, 1995 |
| A high electron mobility transistor (HEMT) includes a diffusion barrier (22) to prevent gate metal (20) diffusion into the substrate (12) during fabrication and a sacrificial platinum alloy layer (30) forms the Schottky barrier. A method of forming a HEMT includes forming a diffusion bar |
| 5181874 |
Method of making microelectronic field emission device with air bridge anode |
January 26, 1993 |
| A field emission device employs an anode in the form of an air bridge spanning the tip of a field emission cathode. The anode is supported only at its opposite ends, leaving the area under the air bridge open. An array of cathode emitters employ a series of parallel, laterally spaced ano |
| 5136205 |
Microelectronic field emission device with air bridge anode |
August 4, 1992 |
| A field emission device employs an anode in the form of an air bridge spanning the tip of a field emission cathode. The anode is supported only at its opposite ends, leaving the area under the air bridge open. An array of cathode emitters employ a series of parallel, laterally spaced ano |
