| Patent Number |
Title Of Patent |
Date Issued |
| 7393755 |
Dummy fill for integrated circuits |
July 1, 2008 |
| A method and system are described to reduce process variation as a result of the electrochemical deposition (ECD), also referred to as electrochemical plating (ECP), and chemical mechanical polishing (CMP) processing of films in integrated circuit manufacturing processes. The describ |
| 7383521 |
Characterization and reduction of variation for integrated circuits |
June 3, 2008 |
| A method and system are described to reduce process variation as a result of the semiconductor processing of films in integrated circuit manufacturing processes. The described methods use process variation and electrical impact to modify the design and manufacture of integrated circu |
| 7380220 |
Dummy fill for integrated circuits |
May 27, 2008 |
| A method and system are described to reduce process variation as a result of the electrochemical deposition (ECD), also referred to as electrochemical plating (ECP), and chemical mechanical polishing (CMP) processing of films in integrated circuit manufacturing processes. The describ |
| 7363598 |
Dummy fill for integrated circuits |
April 22, 2008 |
| A method and system are described to reduce process variation as a result of the electrochemical deposition (ECD), also referred to as electrochemical plating (ECP), and chemical mechanical polishing (CMP) processing of films in integrated circuit manufacturing processes. The describ |
| 7363099 |
Integrated circuit metrology |
April 22, 2008 |
| Sites to be measured on a device that is to be fabricated using at least one fabrication process, are selected based on a pattern-dependent model of the process. A metrology tool to measure a parameter of a semiconductor device includes a control element to select sites for measureme |
| 7360179 |
Use of models in integrated circuit fabrication |
April 15, 2008 |
| A method and system are described to reduce process variation as a result of the electrochemical deposition (ECD), also referred to as electrochemical plating (ECP), and chemical mechanical polishing (CMP) processing of films in integrated circuit manufacturing processes. The describ |
| 7356783 |
Dummy fill for integrated circuits |
April 8, 2008 |
| A method and system are described to reduce process variation as a result of the electrochemical deposition (ECD), also referred to as electrochemical plating (ECP), and chemical mechanical polishing (CMP) processing of films in integrated circuit manufacturing processes. The describ |
| 7174520 |
Characterization and verification for integrated circuit designs |
February 6, 2007 |
| Variations are characterized in feature dimensions of an integrated circuit that is to be fabricated in accordance with a design by a process that produces topographical variation in the integrated circuit, the variations in feature dimension being caused by the topographical variati |
| 7152215 |
Dummy fill for integrated circuits |
December 19, 2006 |
| A method and system are described to reduce process variation as a result of the electrochemical deposition (ECD), also referred to as electrochemical plating (ECP), and chemical mechanical polishing (CMP) processing of films in integrated circuit manufacturing processes. The describ |
| 7124386 |
Dummy fill for integrated circuits |
October 17, 2006 |
| A method and system are described to reduce process variation as a result of the electrochemical deposition (ECD), also referred to as electrochemical plating (ECP), and chemical mechanical polishing (CMP) processing of films in integrated circuit manufacturing processes. The describ |
