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Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Siprak; Domagoj
Address:
Munich, DE
No. of patents:
7
Patents:












Patent Number Title Of Patent Date Issued
8149046 Biasing for transistor-based apparatuses and methods April 3, 2012
The present disclosure relates to constructing and operating a transistor or other active device with significantly reduced flicker noise.
8143936 Application of control signal and forward body-bias signal to an active device March 27, 2012
The present disclosure relates to constructing and operating a transistor or other active device with significantly reduced flicker noise.
7977709 MOS transistor and semiconductor device July 12, 2011
According to one embodiment of the present invention, a MOS transistor includes a semiconductor layer including a source region, a drain region, and a channel region disposed between the source region and the drain region. A gate structure is arranged above the channel regions. A source
7947562 Noise reduction in semiconductor device using counter-doping May 24, 2011
One or more embodiments describe a method of fabricating a silicon based metal oxide semiconductor device, including introducing a first dopant into a first partial completion of the device, the first dopant including a first noise reducing species; and introducing a second dopant into a
7906802 Semiconductor element and a method for producing the same March 15, 2011
Some embodiments comprise a plurality of fins, wherein at least a first fin of the plurality of fins comprises a different fin width compared to a fin width of another fin of the plurality of fins. At least a second fin of the plurality of fins comprises a different crystal surface o
7897956 Biasing a transistor out of a supply voltage range March 1, 2011
The present disclosure relates to constructing and operating a transistor or other active device with significantly reduced flicker noise.
7651920 Noise reduction in semiconductor device using counter-doping January 26, 2010
One or more embodiments describe a method of fabricating a silicon based metal oxide semiconductor device, comprising: implanting a first dopant into a first partial completion of the device, the first dopant comprising a first noise reducing species; and implanting a second dopant i










 
 
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