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Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Shobha; Hosadurga K.
Address:
Niskayuna, NY
No. of patents:
3
Patents:












Patent Number Title Of Patent Date Issued
8212337 Advanced low k cap film formation process for nano electronic devices July 3, 2012
A carbon-rich silicon carbide-like dielectric film having a carbon concentration of greater than, or equal to, about 30 atomic % C and a dielectric constant of less than, or equal to, about 4.5 is provided. In some embodiments, the dielectric film may optionally include nitrogen. Whe
8129843 Methods to mitigate plasma damage in organosilicate dielectrics using a protective sidewall spac March 6, 2012
Plasma damage in ultra low k dielectric materials during formation of a dual damascene metal interconnect structure is reduced by providing a protective spacer on sidewalls of a line trench. A densified trench bottom region may be additionally formed directly beneath an exposed horiz
7781332 Methods to mitigate plasma damage in organosilicate dielectrics using a protective sidewall spac August 24, 2010
Plasma damage in ultra low k dielectric materials during formation of a dual damascene metal interconnect structure is reduced by providing a protective spacer on sidewalls of a line trench. A densified trench bottom region may be additionally formed directly beneath an exposed horiz










 
 
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