| Patent Number |
Title Of Patent |
Date Issued |
| 5582947 |
Glow discharge process for making photoconductive member |
December 10, 1996 |
| A photoconductive member, comprises a support for a photoconductive member and an amorphous layer which is constituted of silicon atoms as matrix containing at least one of hydrogen atom and halogen atom and exhibits photoconductivity, said amorphous layer having a layer region containin |
| 5258250 |
Photoconductive member |
November 2, 1993 |
| A photoconductive member, comprises a support for a photoconductive member and an amorphous layer which is constituted of silicon atoms as matrix containing at least one of hydrogen atom and halogen atom and exhibits photoconductivity, said amorphous layer having a layer region containin |
| 5141836 |
Method of forming a photoconductive member with silicon, hydrogen and/or halogen and carbon |
August 25, 1992 |
| A photoconductive member, comprises a support for a photoconductive member and an amorphous layer which is constituted of silicon atoms as matrix containing at least one of hydrogen atom and halogen atom and exhibits photoconductivity, said amorphous layer having a layer region containin |
| 4895784 |
Photoconductive member |
January 23, 1990 |
| A photoconductive member comprises a drum-shaped substrate and a photoconductive layer provided thereon, said photoconductive layer comprising an amorphous material comprising silicon atoms as a matrix, and said drum-shaped substrate having a ratio of the minimum thickness at the end |
| 4795688 |
Layered photoconductive member comprising amorphous silicon |
January 3, 1989 |
| A photoconductive member comprises a support for a photoconductive member and an amorphous layer having photoconductivity and containing an amorphous material comprising silicon atom as a matrix, said amorphous layer having a first layer region containing oxygen atoms and a second la |
| 4637972 |
Light receiving member having an amorphous silicon photoconductor |
January 20, 1987 |
| A light-receiving member has a substrate and a light receiving layer having photoconductivity containing an amorphous material comprising a matrix of silicon atoms provided on said substrate, said light receiving layer having, from the said support side with respect to the layer thicknes |
| 4636450 |
Photoconductive member having amorphous silicon matrix with oxygen and impurity containing regio |
January 13, 1987 |
| A photoconductive member comprises a support for a photoconductive member and an amorphous layer exhibiting photoconductivity and comprising an amorphous material comprising silicon atoms as a matrix and at least one member selected from the group consisting of hydrogen atoms and halogen |
| 4609601 |
Process of imaging an amorphous Si(C) photoconductive member |
September 2, 1986 |
| A photoconductive member, comprises a support for a photoconductive member and an amorphous layer which is constituted of silicon atoms as matrix containing at least one of hydrogen atom and halogen atom and exhibits photoconductivity, said amorphous layer having a layer region containin |
| 4592985 |
Photoconductive member having amorphous silicon layers |
June 3, 1986 |
| A photoconductive member, is provided which has a support, a first layer having photoconductivity containing an amorphous material comprising silicon atoms as a matrix provided on said support and a second layer containing silicon atoms and carbon atoms as essential components provided |
| 4557987 |
Photoconductive member having barrier layer and amorphous silicon charge generation and charge t |
December 10, 1985 |
| A photoconductive member having a support, amorphous charge generation and charge transport layers and a barrier layer between the support and the charge generation layer. The charge generation layer contains from 0.1 to 10 atomic percent of a conduction controlling impurity. Intermediat |
| 4555465 |
Photoconductive member of amorphous silicon |
November 26, 1985 |
| A photoconductive member comprising a support and a light receiving layer provided on said support, having photoconductivity containing silicon atoms as a matrix and at least hydrogen atoms as constituent atom, said light receiving layer having a layer region with depth profile such that |
| 4547448 |
Photoconductive member comprising silicon and oxygen |
October 15, 1985 |
| A photoconductive member comprises a support for a photoconductive member; a first amorphous layer comprising an amorphous material containing silicon atoms as a matrix and exhibiting photoconductivity, said first amorphous layer having a first layer region containing oxygen atoms as |
| 4539283 |
Amorphous silicon photoconductive member |
September 3, 1985 |
| A photoconductive member, comprises a support for a photoconductive member and an amorphous layer which is constituted of silicon atoms as matrix containing at least one of hydrogen atom and halogen atom and exhibits photoconductivity, said amorphous layer having a layer region containin |
| 4536460 |
Photoconductive member |
August 20, 1985 |
| A photoconductive member comprising a support and a silicon amorphous layer, and the silicon amorphous layer has a first layer region containing at least one of oxygen, nitrogen and carbon and a second layer region containing an element of Group III. The first layer exists internally |
| 4536459 |
Photoconductive member having multiple amorphous layers |
August 20, 1985 |
| A photoconductive member, comprises a support for a photoconductive member, a first amorphous layer exhibiting photoconductivity comprising an amorphous material containing silicon atoms as a martix, said first amorphous layer having a first layer region containing oxygen atoms in a |
| 4529679 |
Photoconductive member |
July 16, 1985 |
| A photoconductive member comprises a substrate and a light receiving layer having photoconductive provided on said support, comprising silicon atoms as a matrix and at least halogen atoms as constituent atoms said light receiving layer having a depth profile with respect to the layer thi |
| 4525442 |
Photoconductive member containing an amorphous boron layer |
June 25, 1985 |
| A photoconductive member comprises a photoconductive layer constituted of an amorphous material containing at least one of hydrogen atoms and halogen atoms in a matrix of silicon atoms and an amorphous layer constituted of an amorphous material containing at least one of hydrogen ato |
| 4501807 |
Photoconductive member having an amorphous silicon layer |
February 26, 1985 |
| A photoconductive member comprising a support for photoconductive member and an amorphous layer exhibiting photoconductivity comprising an amorphous material containing silicon atoms as a matrix is characterized in that said amorphous layer has a first layer region containing, as con |
| 4490454 |
Photoconductive member comprising multiple amorphous layers |
December 25, 1984 |
| A photoconductive member comprises a support for photoconductive member and an amorphous layer comprising an amorphous material containing silicon atoms as a matrix and exhibiting photoconductivity, said amorphous layer having a first layer region containing, as constituent atoms, oxygen |
| 4490453 |
Photoconductive member of a-silicon with nitrogen |
December 25, 1984 |
| A photoconductive member, comprises a support for a photoconductive member and an amorphous layer which is constituted of silicon atoms as matrix containing at least one of hydrogen atom and halogen atom and exhibits photoconductivity, said amorphous layer having a layer region containin |
| 4486521 |
Photoconductive member with doped and oxygen containing amorphous silicon layers |
December 4, 1984 |
| A photoconductive member comprises a support for a photoconductive member and an amorphous layer containing an amorphous material comprising silicon atom as a matrix and having photoconductivity, said amorphous layer comprising a first layer region containing oxygen atom as a constituent |
| 4483911 |
Photoconductive member with amorphous silicon-carbon surface layer |
November 20, 1984 |
| A photoconductive member comprises a support and an amorphous layer comprising a first layer region and a second layer region, the first layer region having photoconductivity comprising an amorphous material which comprises silicon atoms as a matrix and at least one member selected from |
| 4465750 |
Photoconductive member with a -Si having two layer regions |
August 14, 1984 |
| A photoconductive member comprises a support and an amorphous layer compsed of a first layer region composed of a photoconductive amorphous silicon containing p- or n-type impurity distributed nonuniformly and continuously in the layer thickness direction, and a second layer region compo |
| 4464451 |
Electrophotographic image-forming member having aluminum oxide layer on a substrate |
August 7, 1984 |
| An electrophotographic image-forming member comprises a substrate for electrophotography and an amorphous layer which is laid on said substrate and constituted of silicon atoms as matrix containing at least one of hydrogen atom and halogen atom and exhibits photoconductivity, said su |
| 4461820 |
Amorphous silicon electrophotographic image-forming member having an aluminum oxide coated subst |
July 24, 1984 |
| An electrophotographic image-forming member comprises (1) a substrate for electrophotography which has a surface coating of an aluminum oxide containing water chemi-structurally and (2) a photoconductive layer which is laid on said surface coating of the substrate and constituted of an |
| 4460670 |
Photoconductive member with .alpha.-Si and C, N or O and dopant |
July 17, 1984 |
| A photoconductive member comprises a support for a photoconductive member and an amorphous layer having photoconductivity constituted of an amorphous material comprising silicon atoms as a matrix, said amorphous layer having a first layer region containing at least one kind of atoms |
| 4460669 |
Photoconductive member with .alpha.-Si and C, U or D and dopant |
July 17, 1984 |
| A photoconductive member comprises a support for a photoconductive member and an amorphous layer having photoconductivity constituted of an amorphous material comprising silicon atoms as a matrix, said amorphous layer having a first layer region containing as the constituent atom at |
| 4452875 |
Amorphous photoconductive member with .alpha.-Si interlayers |
June 5, 1984 |
| A photoconductive member comprises a support for a photoconductive member, an interface layer comprising an amorphous material containing silicon atoms and nitrogen atoms as constituent atoms, a rectifying layer comprising an amorphous material containing atoms (A) belonging to the g |
| 4452874 |
Photoconductive member with multiple amorphous Si layers |
June 5, 1984 |
| A photoconductive member comprises a support for photoconductive member, an interface layer comprising an amorphous material represented by any of the formulas:(wherein X represents a halogen atom),a rectifying layer comprising an amorphous material containing atoms (A) belonging to the |
| 4443529 |
Photoconductive member having an amorphous silicon photoconductor and a double-layer barrier lay |
April 17, 1984 |
| A photoconductive member comprising a support for photoconductive member, a photoconductive layer constituted of an amorphous material comprising silicon atom as a matrix and a barrier layer between said support and said photoconductive layer, said barrier layer having a double-layer str |
| 4423133 |
Photoconductive member of amorphous silicon |
December 27, 1983 |
| A photoconductive layer comprises a support and an amorphous layer. The amorphous layer is photoconductive, comprises silicon as matrix and hydrogen and/or halogen, and has a layer region containing group III atoms which is distributed such that the distribution is continuous in the |
| 4416962 |
Electrophotographic member having aluminum oxide layer |
November 22, 1983 |
| An electrophotographic image-forming member comprises a substrate for electrophotography and a photoconductive layer which is laid on said substrate and constituted of an amorphous material containing at least one of hydrogen atom or halogen atom in a matrix of silicon atom, said sub |
| 4409308 |
Photoconductive member with two amorphous silicon layers |
October 11, 1983 |
| A photoconductive member comprises a support, a photoconductive layer constituted of an amorphous material containing silicon atoms as matrix and containing hydrogen atoms or halogen atoms, and an intermediate layer provided between them, said intermediate layer having a function to bar |
| 4405702 |
Electrophotographic image-forming member with ladder-type silicon resin layer |
September 20, 1983 |
| An electrophotographic image-forming member comprises: an electrophotographic supporting substrate; a photoconductive layer constituted of an amorphous material which contains silicon atoms as matrix and at least one of hydrogen atoms and halogen atoms; and a resin layer formed by us |
| 4403026 |
Photoconductive member having an electrically insulating oxide layer |
September 6, 1983 |
| A photoconductive member comprises a support, a photoconductive layer constituted of an amorphous material containing hydrogen atoms or halogen atoms in a matrix of silicon atoms, and an intermediate layer constituted of an electrically insulating oxide having a layer thickness of 30 to |
| 4394426 |
Photoconductive member with .alpha.-Si(N) barrier layer |
July 19, 1983 |
| A photoconductive member comprise a support, a photoconductive layer constituted of an amorphous material containing silicon atoms as matrix and containing hydrogen atoms or halogen atoms, and an intermediate layer provided between them, said intermediate layer having a function to bar |
| 4394425 |
Photoconductive member with .alpha.-Si(C) barrier layer |
July 19, 1983 |
| A photoconductive member comprises a support, a photoconductive layer constituted of an amorphous material containing silicon atoms as matrix and containing hydrogen atoms or halogen atoms, and an intermediate layer provided between them, said intermediate layer having a function to bar |
| 4359514 |
Photoconductive member having barrier and depletion layers |
November 16, 1982 |
| A photoconductive member which is stable in its electrical and optical characteristics, not influenced by circumstances for its use, and possesses extremely high sensitivity to light, remarkably high anti-photo-fatigue property, and deterioration-resistant against repeated use, the p |
| 4359512 |
Layered photoconductive member having barrier of silicon and halogen |
November 16, 1982 |
| Disclosed is a panchromatic photoconductive element for electrophotography having a layered structure comprising a substrate, a barrier layer and a photoconductive layer. The barrier layer inhibits injection of carriers from the substrate. Amorphous silicon forms a matrix for either the |
