| Patent Number |
Title Of Patent |
Date Issued |
| 5889573 |
Thin film transistor substrate, manufacturing method thereof, liquid crystal display panel and l |
March 30, 1999 |
| The present invention concerns an active-matrix addressed TFT substrate using a thin film transistor, a manufacturing method and an anodic oxidation method thereof, a liquid crystal display panel using the TFT substrate and a liquid crystal display equipment using the liquid crystal |
| 5719408 |
Thin film transistor substrate, manufacturing method thereof, liquid crystal display panel and l |
February 17, 1998 |
| In the present invention, Cr or Ta is used for gate terminals, aluminum or a metal mainly composed of aluminum is used for gate bus-lines extended therefrom, gate electrodes and thin film capacitances (additional capacitance, storage capacitance) and an anodic oxidized film composed of |
| 5672523 |
Thin film transistor substrate, manufacturing method thereof, liquid crystal display panel and l |
September 30, 1997 |
| The present invention concerns an active-matrix addressed TFT substrate using a thin film transistor, a manufacturing method and an anodic oxidation method thereof, a liquid crystal display panel using the TFT substrate and a liquid crystal display equipment using the liquid crystal |
| 5671027 |
LCD device with TFTs in which pixel electrodes are formed in the same plane as the gate electrod |
September 23, 1997 |
| An active matrix liquid crystal display device, with a plurality of thin-film transistors provided over a glass substrate each including an anodized oxide film of aluminum gate electrode, in which transparent pixel electrodes are formed in the same plane as the gate electrodes between th |
| 5610738 |
Method for making LCD device in which gate insulator of TFT is formed after the pixel electrode |
March 11, 1997 |
| An active matrix liquid crystal display device, with a plurality of thin-film transistors provided over a glass substrate each including an anodized oxide film of aluminum gate electrode, in which transparent pixel electrodes are formed in the same plane as the gate electrodes between th |
| 5585290 |
Method of manufacturing a thin film transistor substrate |
December 17, 1996 |
| The present invention concerns an active-matrix addressed TFT substrate using a thin film transistor, a manufacturing method and an anodic oxidation method thereof, a liquid crystal display panel using the TFT substrate and a liquid crystal display equipment using the liquid crystal |
| 5530568 |
Matrix liquid crystal, display device having testing pads of transparent conductive film |
June 25, 1996 |
| A liquid crystal display device comprises: a liquid crystal display panel including a liquid crystal interposed between first and second transparent plates; a set of conductive lines disposed on a surface of at least one of said transparent plates; and a set of electrically conductive pa |
| 5402254 |
Liquid crystal display device with TFTS in which pixel electrodes are formed in the same plane a |
March 28, 1995 |
| An active matrix liquid crystal display device, with a plurality of thin-film transistors provided over a glass substrate each including an anodized oxide film of aluminum gate electrode, in which transparent pixel electrodes are formed in the same plane as the gate electrodes between th |
| 5359206 |
Thin film transistor substrate, liquid crystal display panel and liquid crystal display equipmen |
October 25, 1994 |
| Disclosed is an active-matrix addressed TFT substrate using a thin film transistor, a manufacturing method and an anodic oxidation method thereof, a liquid crystal display panel using the TFT substrate and a liquid crystal display equipment using the liquid crystal display panel. In the |
| 5285301 |
Liquid crystal display device having peripheral dummy lines |
February 8, 1994 |
| An active matrix liquid crystal display device with a plurality of thin-film transistors each including a gate electrode, preferably made of an aluminum film formed over a glass substrate, and a gate insulator preferably made of an upper silicon nitride film and a lower anodized oxid |
| 5177577 |
Liquid crystal display device with TFT's each including a Ta gate electrode and an anodized Al o |
January 5, 1993 |
| An active matrix liquid crystal display device with a plurality of thin-film transistors each including a gate electrode of an upper aluminum film and a lower tantalum film formed over a glass substrate and a gate insulator of an upper silicon nitride film and a lower anodized oxide film |
| 4426548 |
Multilayer wiring structure |
January 17, 1984 |
| A multilayer wiring structure comprising a plurality of groups of patterns each having a multiplicity of wirings formed on the opposite sides of an intervening insulation film. The intervening insulation film is formed with a void exposed to both an upper pattern of a multiplicity of wir |
