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Inventor:
Shirahashi; Kazuo
Address:
Mobara, JP
No. of patents:
12
Patents:












Patent Number Title Of Patent Date Issued
5889573 Thin film transistor substrate, manufacturing method thereof, liquid crystal display panel and l March 30, 1999
The present invention concerns an active-matrix addressed TFT substrate using a thin film transistor, a manufacturing method and an anodic oxidation method thereof, a liquid crystal display panel using the TFT substrate and a liquid crystal display equipment using the liquid crystal
5719408 Thin film transistor substrate, manufacturing method thereof, liquid crystal display panel and l February 17, 1998
In the present invention, Cr or Ta is used for gate terminals, aluminum or a metal mainly composed of aluminum is used for gate bus-lines extended therefrom, gate electrodes and thin film capacitances (additional capacitance, storage capacitance) and an anodic oxidized film composed of
5672523 Thin film transistor substrate, manufacturing method thereof, liquid crystal display panel and l September 30, 1997
The present invention concerns an active-matrix addressed TFT substrate using a thin film transistor, a manufacturing method and an anodic oxidation method thereof, a liquid crystal display panel using the TFT substrate and a liquid crystal display equipment using the liquid crystal
5671027 LCD device with TFTs in which pixel electrodes are formed in the same plane as the gate electrod September 23, 1997
An active matrix liquid crystal display device, with a plurality of thin-film transistors provided over a glass substrate each including an anodized oxide film of aluminum gate electrode, in which transparent pixel electrodes are formed in the same plane as the gate electrodes between th
5610738 Method for making LCD device in which gate insulator of TFT is formed after the pixel electrode March 11, 1997
An active matrix liquid crystal display device, with a plurality of thin-film transistors provided over a glass substrate each including an anodized oxide film of aluminum gate electrode, in which transparent pixel electrodes are formed in the same plane as the gate electrodes between th
5585290 Method of manufacturing a thin film transistor substrate December 17, 1996
The present invention concerns an active-matrix addressed TFT substrate using a thin film transistor, a manufacturing method and an anodic oxidation method thereof, a liquid crystal display panel using the TFT substrate and a liquid crystal display equipment using the liquid crystal
5530568 Matrix liquid crystal, display device having testing pads of transparent conductive film June 25, 1996
A liquid crystal display device comprises: a liquid crystal display panel including a liquid crystal interposed between first and second transparent plates; a set of conductive lines disposed on a surface of at least one of said transparent plates; and a set of electrically conductive pa
5402254 Liquid crystal display device with TFTS in which pixel electrodes are formed in the same plane a March 28, 1995
An active matrix liquid crystal display device, with a plurality of thin-film transistors provided over a glass substrate each including an anodized oxide film of aluminum gate electrode, in which transparent pixel electrodes are formed in the same plane as the gate electrodes between th
5359206 Thin film transistor substrate, liquid crystal display panel and liquid crystal display equipmen October 25, 1994
Disclosed is an active-matrix addressed TFT substrate using a thin film transistor, a manufacturing method and an anodic oxidation method thereof, a liquid crystal display panel using the TFT substrate and a liquid crystal display equipment using the liquid crystal display panel. In the
5285301 Liquid crystal display device having peripheral dummy lines February 8, 1994
An active matrix liquid crystal display device with a plurality of thin-film transistors each including a gate electrode, preferably made of an aluminum film formed over a glass substrate, and a gate insulator preferably made of an upper silicon nitride film and a lower anodized oxid
5177577 Liquid crystal display device with TFT's each including a Ta gate electrode and an anodized Al o January 5, 1993
An active matrix liquid crystal display device with a plurality of thin-film transistors each including a gate electrode of an upper aluminum film and a lower tantalum film formed over a glass substrate and a gate insulator of an upper silicon nitride film and a lower anodized oxide film
4426548 Multilayer wiring structure January 17, 1984
A multilayer wiring structure comprising a plurality of groups of patterns each having a multiplicity of wirings formed on the opposite sides of an intervening insulation film. The intervening insulation film is formed with a void exposed to both an upper pattern of a multiplicity of wir










 
 
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