| Patent Number |
Title Of Patent |
Date Issued |
| RE33193 |
Ion beam processing apparatus and method of correcting mask defects |
April 3, 1990 |
| Disclosed is an ion beam processing apparatus comprising within a vacuum container a specimen chamber with a table for mounting a specimen provided therein, a high intensity ion source, such as a liquid metal ion source or an electric field ionizing ion source which operates in ultra-low |
| 6753253 |
Method of making wiring and logic corrections on a semiconductor device by use of focused ion be |
June 22, 2004 |
| Herein disclosed are a variety of techniques relating to the wiring and logic corrections on a chip by making use of the focused ion beam (which is shortly referred to as "FIB") or the laser selection metal CVD. The time periods for the wiring corrections and for debugging and developing |
| 5824598 |
IC wiring connecting method using focused energy beams |
October 20, 1998 |
| An IC wiring connecting method for interconnecting conductive lines of the same wiring plane of an IC chip for correcting the wiring, for interconnecting conductive lines of different wiring lanes of a multilayer IC chip at the same position, or for connecting a conductive line of a |
| 5683547 |
Processing method and apparatus using focused energy beam |
November 4, 1997 |
| A processing method and apparatus using a focused energy beam for conducting local energy beam processing in a focused energy beam irradiating area by irradiating a sample with a focused energy beam such as an ion beam or an electron beam in an etching gas atmosphere. As the etching |
| 5497034 |
IC wiring connecting method and apparatus |
March 5, 1996 |
| An IC wiring connecting method for interconnecting conductive lines of the same wiring plane of an IC chip for correcting the wiring, for interconnecting conductive lines of different wiring lanes of a multilayer IC chip at the same position, or for connecting a conductive line of a |
| 5472507 |
IC wiring connecting method and apparatus |
December 5, 1995 |
| An IC wiring connecting method for interconnecting conductive lines of the same wiring plane of an IC chip for correcting the wiring, for interconnecting conductive lines of different wiring lanes of a multilayer IC chip at the same position, or for connecting a conductive line of a |
| 5447614 |
Method of processing a sample using a charged beam and reactive gases and system employing the s |
September 5, 1995 |
| A method of processing a sample using a charged beam and reactive gases and a system employing the same, the method and system being able to perform the reactive etching and the beam assisted deposition using a charged particle detector free from the degradation of the performance due to |
| 5439763 |
Optical mask and method of correcting the same |
August 8, 1995 |
| An optical mask for a projection optical system and a method of correcting the mask wherein the mask includes a light intercepting pattern formed on a transparent substrate and a phase shifter for changing the phase of an exposure light provided at predetermined openings of the light |
| 5358806 |
Phase shift mask, method of correcting the same and apparatus for carrying out the method |
October 25, 1994 |
| A defect of a phase shift mask, which has a phase shifter disposed on a transparent substrate, formed into a predetermined pattern and acting to shift a phase of exposure light transmitted therethrough and an etching stopper disposed between the phase shifter and the transparent substrat |
| 5342448 |
Apparatus for processing a sample using a charged beam and reactive gases |
August 30, 1994 |
| A method of processing a sample using a charged beam and reactive gases and a system employing the same, the method and system being able to perform the reactive etching and the beam assisted deposition using a charged particle detector free from the degradation of the performance due to |
| 5229607 |
Combination apparatus having a scanning electron microscope therein |
July 20, 1993 |
| A combination apparatus having a scanning electron microscope includes equipment for performing any of observing, measuring and processing operations on a sample placed in a sample chamber. The sample chamber contains a focused electron beam irradiating unit apart from the components |
| 5223109 |
Ion beam processing method and apparatus |
June 29, 1993 |
| There is disclosed an ion beam processing method of processing a rotating workpiece for a very small-size rotary member, using an ion beam or a focused ion beam. Apparatus for performing this method is also disclosed. In the formation of a product having a non-circular cross-section, whe |
| 5086015 |
Method of etching a semiconductor device by an ion beam |
February 4, 1992 |
| A method of etching a semiconductor device having multi-layered wiring by an ion beam is disclosed which method comprises the steps of: extracting a high-intensity ion beam from a high-density ion source; focusing the extracted ion beam; causing the focused ion beam to perform a scanning |
| 5055696 |
Multilayered device micro etching method and system |
October 8, 1991 |
| In locally reactive etching by irradiating to a multilayered workpiece reactive beam generated by extracting the reactant gas ionized or by irradiating such focussing beam as ion beam, electron beam or laser beam to the multilayered workpiece in an atmosphere of reactant gas; each layer |
| 5026664 |
Method of providing a semiconductor IC device with an additional conduction path |
June 25, 1991 |
| A semiconductor IC device having a substrate, a patterned conductor layer for interconnection of regions in the substrate and a passivation layer covering the device is provided with an additional conduction path of a pattern and/or part of the patterned conductor layer is removed for |
| 4933565 |
Method and apparatus for correcting defects of X-ray mask |
June 12, 1990 |
| The present invention relates to a method and apparatus for correcting defects of an X-ray mask which includes a focused ion beam used to irradiate at least a region having a defective portion of an X-ray mask having a protective film and eliminating the protective film; exposing a c |
| 4925755 |
Method of correcting defect in circuit pattern |
May 15, 1990 |
| A method of correcting a circuit pattern such as an X-ray mask, carried out by first preparing a circuit pattern structure where a circuit pattern on a conductive film is coated with a protective film, then forming a hole or a slit by irradiating a high-intensity focused ion beam to a dr |
| 4900695 |
Semiconductor integrated circuit device and process for producing the same |
February 13, 1990 |
| The present invention relates to a semiconductor integrated circuit device and a process for producing the same. A hole is bored in an insulating film above a portion of a wiring which is to be connected to another wiring by means of a focused ion beam. The inside of the hole and a p |
| 4868068 |
IC wiring connecting method and resulting article |
September 19, 1989 |
| A IC wiring connecting method for interconnecting conductive lines of the same wiring plane of an IC chip for correcting the wiring, for interconnecting conductive lines of different wiring lanes of a multilayer IC chip at the same position, or for connecting a conductive line of a l |
| 4687939 |
Method and apparatus for forming film by ion beam |
August 18, 1987 |
| An ion beam apparatus which comprises an enclosure defining a chamber of high vacuum. A crucible for producing vapor of a material, ionizing means, ion accelerating means, and a substrate to be deposited with the vaporized material to thereby form a film thereon are disposed within the c |
| 4683378 |
Apparatus for ion beam work |
July 28, 1987 |
| This invention discloses an ion beam work apparatus which comprises ion mean radiation means for focusing and radiating an ion beam extracted from an ion source to a target put on a moving mechanism, and scanning two-dimensionally the radiation position; secondary particle detection |
| 4609809 |
Method and apparatus for correcting delicate wiring of IC device |
September 2, 1986 |
| The invention discloses a method and apparatus for correcting a device characterized in that an ion beam is extracted from an ion source having high luminance such as a liquid metal ion source or the like, the ion beam is then converged to a delicate spot by use of a charged particle opt |
| 4567398 |
Liquid metal ion source |
January 28, 1986 |
| A liquid metal ion source according to the present invention has a needle electrode disposed at a position spaced from a reservoir for holding a source material, and is provided with means for freely varying a distance from the reservoir to the fore end of the needle electrode. |
| 4566765 |
Apparatus for summing several ring-shape laser beams |
January 28, 1986 |
| A light source apparatus comprises one laser oscillator, at least one other laser oscillator, a light converter for converting a laser beam emitted from the other laser oscillator into a ring-shaped laser beam, and a reflecting mirror for passing a laser light beam emitted from the one |
| 4560907 |
Ion source |
December 24, 1985 |
| An ion source apparatus of surface ionization type comprises an emitter tip in the form of a round rod having a sharp-pointed end, an ion source material holder for holding the emitter tip coaxially within a crucible made of a material of a high melting point, the crucible having an open |
| 4503329 |
Ion beam processing apparatus and method of correcting mask defects |
March 5, 1985 |
| Disclosed is an ion beam processing apparatus comprising within a vacuum container a specimen chamber with a table for mounting a specimen provided therein, a high intensity ion source, such as a liquid metal ion source or an electric field ionizing ion source which operates in ultra-low |
| 4479060 |
Apparatus for irradiation with charged particle beams |
October 23, 1984 |
| An apparatus according to the present invention for irradiating a specimen with charged particle beams comprises a single charged particle generating source from which the charged particle beams formed of electrons and negative ions, respectively, can be simultaneously derived; a specime |
