| Patent Number |
Title Of Patent |
Date Issued |
| 7132713 |
Controllable conduction device with electrostatic barrier |
November 7, 2006 |
| A controllable conduction device in the form of a transistor comprises source and drain regions 5, 2 between which extends a conduction path P for charge carriers, a gate 4 for controlling charge carrier flow along the conduction path and a multiple layer structure 3 providing a multiple |
| 6825527 |
Semiconductor memory device and manufacturing method |
November 30, 2004 |
| A high speed/large capacity DRAM (Dynamic Random Access Memory) is generally refreshed each 0.1 sec because it loses information stored therein due to a leakage current. The DRAM also loses information stored therein upon cutoff of a power source. Meanwhile, a nonvolatile ROM (Read-o |
| 6642574 |
Semiconductor memory device and manufacturing method thereof |
November 4, 2003 |
| A high speed/large capacity DRAM (Dynamic Random Access Memory) is generally refreshed each 0.1 sec because it loses information stored therein due to a leakage current. The DRAM also loses information stored therein upon cutoff of a power source. Meanwhile, a nonvolatile ROM (Read-o |
| 6211531 |
Controllable conduction device |
April 3, 2001 |
| A controllable conduction device in the form of a transistor comprises source and drain regions 5, 2 between which extends a conduction path P for charge carriers, a gate 4 for controlling charge carrier flow along the conduction path and a multiple layer structure 3 providing a multiple |
| 6169308 |
Semiconductor memory device and manufacturing method thereof |
January 2, 2001 |
| A high speed/large capacity DRAM (Dynamic Random Access Memory) is generally refreshed each 0.1 sec because it loses information stored therein due to a leakage current. The DRAM also loses information stored therein upon cutoff of a power source. Meanwhile, a nonvolatile ROM (Read-o |
| 6060723 |
Controllable conduction device |
May 9, 2000 |
| A controllable conduction device in the form of a transistor comprises source and drain regions 5, 2 between which extends a conduction path P for charge carriers, a gate 4 for controlling charge carrier flow along the conduction path and a multiple layer structure 3 providing a multiple |
| 5523592 |
Semiconductor optical device, manufacturing method for the same, and opto-electronic integrated |
June 4, 1996 |
| By i) forming a layered structure of an undoped single crystalline Si layer and single crystalline Si.sub.0.8 Ge.sub.0.2 mixed crystal layer on an n-Si(100) substrate, a second undoped single crystalline Si layer on it, and a p type hydrogenated amorphous Si.sub.1-B C.sub.B layer on it, |
| 5521390 |
Nanodisplacement producing apparatus |
May 28, 1996 |
| An optical nanodisplacement producing apparatus is realized by employing an optical parametric oscillator of which cavity length is varied in correspondence with a wavelength or the intensity of the output light signal to achieve a fine-displacement producing mechanism. An optical na |
| 5041729 |
Radiation detector and manufacturing process thereof |
August 20, 1991 |
| A radiation detector for use on X-ray CT scanner with a plurality of elements arrayed to form a detector block, which is structured that a plurality of thin-film photodiodes consisting of amorphous silicon each are formed on the back of a scintillator block having a width to cover the |
| 4982095 |
Multi-element type radiation detector |
January 1, 1991 |
| This invention relates to a multi-element type radiation detector for an X-ray CT scanner system wherein a plurality of scintillator blocks that are isolated either optically or radiation-wise from one another are arranged integrally, and a photo-diode consisting of an amorphous silicon |
| 4937454 |
Radiation detector |
June 26, 1990 |
| In a radiation detector having a scintillator and a photodiode in combination, an amorphous silicon diode of a refractive index of 3.5 or below is used for a photodector to have a decreased junction capacitance. This shifts the spectral sensitivity characteristic of the photodetector |
| 4885614 |
Semiconductor device with crystalline silicon-germanium-carbon alloy |
December 5, 1989 |
| The present invention discloses a semiconductor device comprising a semiconductor layer being made of monocrystalline silicon or silicon-germanium alloy and a semiconductor layer being made of silicon-germanium-carbon alloy formed thereon, wherein the two layers form a heterojunction |
| 4721535 |
Solar cell |
January 26, 1988 |
| A solar cell including at least a thin film formed of an amorphous silicon material and having p-type conductivity. The thin film comprises a multi-layer structure including at least one non-doped layer formed of a material of an amorphous silicon material and having a thickness of 10 to |
| 4672015 |
Electrophotographic member having multilayered amorphous silicon photosensitive member |
June 9, 1987 |
| The invention relates to an electrophotographic member which is highly sensitive to the light of long wavelengths. Amorphous silicon is used as a photosensitive base member. A long wavelength sensitizing region has a narrower forbidden band gap width than that of the base member, and |
| 4642412 |
Photo-electronic conversion apparatus with light pattern discriminator |
February 10, 1987 |
| A plurality of photovoltaic devices (e.g., solar cells) connect with each other and form a photo-electric conversion apparatus. The photovoltaic devices concerned are so connected with each other that when a given pattern of light is irradiated upon the photo-electric conversion appa |
